Properties for the Behavior of Charged Carrier within the Intergranular Layer of ZnO Varistor Fabricated 3-Composition Seed Grain Method

3-성분 종입자 법으로 제조한 ZnO 바리스터의 입계모델에서 캐리어의 거동 특성

This paper may be presented the carrier oscillation properties for the varistor fabricated by a new method of three-composition seed grain, in order to analyze the behavior of carriers at the its equivalent circuit model. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of non trapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. However, Current oscillation phenomena is hardly shown in the high electric field. The injected carriers from both electrodes are directly flowed from the conduction band of forward biased grain through the intergranular layer into the reverse biased grain, because the trap level in the electric field above the knee voltage is mostly filled.