• Journal of the Korean Chemical Society
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• v.33 no.4
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• pp.371-378
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• 1989

Kinetics of the substitution reaction of [pt[dien]X]$^+$(X = $Cl^-$, $Br^-$, $I^-$) with NO2- in aqueous solution were investigated by a spectrophotometric method at $20-35^{\circ}C$ and 1-1500 bars. The rates of these reactions were increased with raising temperature and pressure. The relative reactivities of replaceable ligands in [pt[dien]X]$^+$ follow the order ($Cl^-$ > $Br^-$ > $I^-$). Activation volumes (${\mid}{\Delta}V^{\neq}{\mid}$) were large negative values and decreased with raising temperature. First ($k_1$) and second($k_2$) order rate constants of these reactions were determined at $25^{\circ}C$ and both $k_1$ and $k_2$ were increased with raising pressure and activation volumes (${\Delta}{V_1}^{\neq}$, ${\Delta}{V_2}^{\neq}$) for the $k_1$ and $k_2$ path were large negative values respectively. The $k_1$ and $k_2$ of these reactions were determined at 1 bar and these values were increased with raising temperature. Activation parameters of $k_1$ and $k_2$ path were determined, therefore it can be inferred frp, these results that the substitution reactions of [pt[dien]X]$^+$ with ${NO_2}^-$ proceed through on associative (A) mechanism independent of a leaving groups and reaction paths.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.526-532
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• 2015

We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.986-989
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• 2004

The concept and results of a simple constant switching frequency delta modulation scheme suitable for DC-AC power conversion in uninterruptable power supply (UPS) applications are presented. Unlike the traditional delta modulation scheme, the scheme has a well defined harmonic spectrum, resulting in a simple filter design and reduced radio interference.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.263-267
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• 1998

In this study, we have fabricated in-situ multilayer $YBa_2Cu_3O_{7-\delta}$/$SrTiO_{3}$/$YBa_2Cu_3O_{7-\delta}$ ramp edge type junctions by using a metal mask and pulsed laser deposition method and studied the junction properties. The junctions showed RSJ-like I-V characteristics. The normal state junction resistance R, of $18 \omega$ was nearly constant with temperature. The dc-SQUID sensors fabricated with the junctions show a sensitivity that transfer function dV/$d\Phi$)~$22\mu$V/$\Phi_{0}$, indicating that the in-situ ramp edge type junction is potentially useful for sensor application.

• Journal of the Korean Ceramic Society
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• v.40 no.5
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• pp.455-459
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• 2003

Tunneling spectra of B $i_2$S $r_2$Ca(C $u_{1-x}$ N $i_{x}$ )$_2$ $O_{8+}$$\delta$/ film by LPE method have been measured using break junctions. The energy gap 2$\Delta$ and 2$\Delta$/ $k_{B}$ $T_{c}$ $^{zero}$ increased with increase of ft. We obtained the energy gap Parameter 2$\Delta$(4.2 K) = 54.4~64 meV, and corresponding1y $\Delta$/ $k_{B}$ $T_{c}$ $^{zero}$=7.36~10.14, larger than the BCS value. The lattice constant c and critical temperature $T_{c}$ $^{zero}$ decrease with increase of $\chi$$_{L}$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.3
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• pp.283-289
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• 2018

A PLL with an unipolar charge pump and a loop filter consisting of sample-hold capacitor and Fvco-sampled feedforward loop filter. The proposed PLL not only reduces the chip area by replacing the resistance to a switch and a small capacitor but also reduces the variation of ${\Delta}VLPF$ and ${\Delta}{\Delta}VLPF$ to 1/6 and 1/5 respectively. The variation of ${\Delta}VLPF$ is related to the phase noise of VCO output and that of ${\Delta}{\Delta}VLPF$ is proportional to reference spurs. It has been simulated and verified with a 1.8V $0.18{\mu}m$ CMOS process and shown a good phase noise characteristics. We plan to fabricate chip based on the simulations and check performance.

• Bulletin of the Korean Mathematical Society
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• v.50 no.3
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• pp.839-865
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• 2013

We deal with the existence of positive radial solutions concentrating on spheres for the following class of elliptic system $$\large(S) \hfill{400} \{\array{-{\varepsilon}^2{\Delta}u+V_1(x)u=K(x)Q_u(u,v)\;in\;\mathbb{R}^N,\\-{\varepsilon}^2{\Delta}v+V_2(x)v=K(x)Q_v(u,v)\;in\;\mathbb{R}^N,\\u,v{\in}W^{1,2}(\mathbb{R}^N),\;u,v&gt;0\;in\;\mathbb{R}^N,}$$ where ${\varepsilon}$ is a small positive parameter; $V_1$, $V_2{\in}C^0(\mathbb{R}^N,[0,{\infty}))$ and $K{\in}C^0(\mathbb{R}^N,[0,{\infty}))$ are radially symmetric potentials; Q is a $(p+1)$-homogeneous function and p is subcritical, that is, 1 < $p$ < $2^*-1$, where $2^*=2N/(N-2)$ is the critical Sobolev exponent for $N{\geq}3$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.157-157
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• 2003

수평 전기로에서 CdIn2Te4 다결정을 용융법으로 합성하고 Bridgman법으로 tetragonal structure의 c축에 평행한 CdIn2Te4 단결정을 성장시켰다. c축에 평행한 시료의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 spectra에 의해 band gap Eg(T)는 varshni공식에 따라 계산한 결과 1.4753eV-(7.78$\times$$10^{-3}$eV/K)T$^2$/(T+2155K)임을 확인하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 9.01$\times$$10^{16}$ /㎤, 219 $\textrm{cm}^2$/V.S였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting $\Delta$cr값이 0.2704 eV이며 spin-orbit $\Delta$so 값은 0,1465 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n=1일때 Al-, Bl-와 Cl-exciton 봉우리임을 알았다.

• Communications of the Korean Mathematical Society
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• v.38 no.3
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• pp.741-754
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• 2023

In this paper, we study the existence and nonexistence of solutions for a class of Hamiltonian strongly degenerate elliptic system with subcritical growth $$\left{\array{-{\Delta}_{\lambda}u-{\mu}v={\mid}v{\mid}^{p-1}v&&\text{in }{\Omega},\\-{\Delta}_{\lambda}v-{\mu}u={\mid}u{\mid}^{q-1}u&&\text{in }{\Omega},\\u=v=0&&\text{ on }{\partial}{\Omega},}$$ where p, q > 1 and Ω is a smooth bounded domain in ℝ^N, N ≥ 3. Here Δ_λ is the strongly degenerate elliptic operator. The existence of at least a nontrivial solution is obtained by variational methods while the nonexistence of positive solutions are proven by a contradiction argument.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.1
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• pp.69-77
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• 2012

After lunar explorations were restarted in 1990s, the world space advanced countries have been competing actively to preoccupy the Moon from the 2000s. Korea has been also conducting precedent study on lunar exploration to carry out that by ourselves in 2020. This study analyzed delta-V of various Earth-Moon transfer trajectories for minimization of fuel consumption. Through the simulation, the best Earth-Moon transfer trajectory for Korean lunar mission is suggested and it will be used as useful materials of Korean lunar mission.