• 한국자기학회지
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• 제15권2호
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• pp.109-112
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• 2005

Electronic and magnetic properties of $Ti_{1-x}M_xO_{2-\delta}$ (M=Co and Fe) thin films grown by sol-gel method have been investigated. Anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films were successfully grown on $Al_2O_3$ (0001) substrates and exhibited p-type electrical conductivity while the undoped films n-type conductivity. Room temperature vibrating sample magnetometry measurements on the anatase and rutile $Ti_{1-x}Co_xO_{2-\delta}$ films with same x ($=4.8 at.{\%}$) showed quite similar magnetic hysteresis curves with the saturation magnetic moment of $\~4 {\mu}_B$ per Co ion despite their differences in structural and electronic properties. Such giant magnetic moment is attributable to the unquenched orbital moment of the $Co^{2+}$ ions substituting the octahedral $Ti^{4+}$ sites. Similar ferromagnetic behavior was observed for $Ti_{1-x}Fe_xO_{2-\delta}$ films that are highly resistive compared to the Co doped samples. Saturation magnetic moment was found to decrease for higher x, i.e., $\~2$ and $\~1.5 {\mu}_B$ per Fe ion for x=2.4 and 5.8 at. $\%$, respectively. Conversion electron $M\ddot{o}ssbauer$ spectroscopy measurements predicted the coexistence of $Fe^{2+}$ and $Fe^{3+}$ ions at the octahedral sites of $Ti_{1-x}Fe_xO_{2-\delta}$.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.133-138
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• 2017

We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.

• Korean Chemical Engineering Research
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• 제61권1호
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• pp.162-167
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• 2023

망간산화물은 다양한 결정구조를 가지고 있으며, 특히 초기에 생성되는 나노층상구조의 δ-MnO₂ 가 다양한 산화환원 반응에 따라 여러가지 터널 및 층상구조로 변화한다. 최근Zn기반 이차전지에 대한 관심이 증가하고 있지만, 충방전 간 Zn이온이 양극재로 사용되는 망간산화물 결정 구조 변화 및 새로운 결정 생성 등에 미치는 영향에 대한 기초적 이해를 위해 Zn이온이 망간산화물 결정에 미치는 영향에 대한 연구가 더욱 필요하다. 본 연구에서는 수열반응 간 Zn 도핑정도가 조절된 나노층상구조의 δ-MnO₂의 변화를 통해 todorokite과 chalcophanite이 생성 및 성장되는 것을 확인하였고, 반응 시간에 따른 변화과정을 확인하였다. Zn의 양이 많을수록 chalcophanite 결정이 우세하게 생성되었고, 결정 생성이 상대적으로 느린 속도로 발생하는 것을 확인하였다.

• 전기화학회지
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• 제14권3호
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• pp.176-183
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• 2011

본 연구에서는 Sr이 치환된 이중층 페로브스카이트($SmBa_{0.5}Sr_{0.5}Co_2O_{5+{\delta}}$, SBSCO)와 전해질 물질로 사용되는 $Ce_{0.9}Gd_{0.1}O_{2-{\delta}}$ (CGO91)을 기반으로 한 중 저온형 고체산화물 연료전지 (ITSOFC) 복합공기극의 분말 크기와 열 사이클에 대한 전기화학특성을 연구하였다. 복합공기극의 모체가 되는 SBSCO에 CGO91물질을 이용하여 면적비저항을 확인 한 결과 약 $0.54\sim9.04{\mu}m$의 분말 크기를 보이는 SBSCO와 $0.4\sim42{\mu}m$의 분말 크기를 보인 CGO91이 각각 50 wt%로 구성된 SBSCO : 50 복합공기극이 600 및 $700^{\circ}C$에서 약 0.102 및 $0.013{\Omega}cm^2$의 우수한 면적비 저항을 가지는 것을 확인 하였으며 상대적으로 분말 크기가 큰 CGO91 분말을 이용한 두 개의 공기극의 경우 $700^{\circ}C$에서 약 $0.260{\Omega}cm^2$와 $0.055{\Omega}cm^2$의 특성을 보여주었다. 10회에 걸친 열 사이클실험을 통하여 SBSCO : 50의 면적비저항은 $0.0193{\Omega}cm^2$에서 $0.094{\Omega}cm^2$로 증가하였으며 7회 이후의 면적비저항은 일정하게 유지됨을 확인하였다.

• 한국진공학회지
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• 제20권2호
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• pp.135-140
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• 2011

Be을 도핑한 p형 GaSb:Be 에피층의 광여기 발광(PL) 스펙트럼(20 K)의 도핑밀도에 따른 변화를 조사하여, Be 억셉터의 근원을 분석하였다. 도핑을 증가시키면 PL 피크가 고에너지로 변위하고 반치폭은 줄어드는 경향을 보이다가, 밀도가 ${\sim}10^{17}cm^{-3}$ 이상에서 피크 에너지는 오히려 저에너지로 변위하고 반치폭이 늘어나는 현상을 관측하였다. 3개 피크로 분리한 PL 스펙트럼의 적분 PL 강도 변화를 통하여, 도핑 증가에 따라 $Be[Be_{Ga}]$ 준위(0.794 eV)는 감소하는 반면 진성결함에 기인한 $A[Ga_{Sb}]$ 피크(0.778 eV)와 함께 Be과 A 사이에 위치하는 새로운 $Be^*$ 준위(0.787 eV)가 증가하기 때문으로 분석되었다. 이것은 Be을 도핑한 p-GaSb:Be 에피층에는 Be 얕은준위(${\Delta}E=16meV$)와 Be과 A 결함준위가 결합한 $Be^*[Ga_{Sb}-Be_{Ga}]$의 복합준위(${\Delta}E=23meV$)가 공존하기 때문으로 논의하였으며, ${\sim}10^{17}cm^{-3}$ 이상 도핑할 경우에는 Be 준위가 다소 감소할 수 있음을 보였다.

• 한국재료학회지
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• 제4권4호
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• pp.428-438
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• 1994

Y-Ba-Cu-O 계에서 123상의 성장에 미치는 Sn의 효과를 관찰하기 위하여 Sn이 첨가된 123+Sn성형체와 Sn이 첨가되지 않은 123성형체와의 couple시편을 만들었다. $1100^{\circ}C$에서 24시간 유지한 후 $970^{\circ}C$에서 1시간 유지한 시편에서 123상은 Sn이 첨가된 123+Sn 성형체의 표면에서부터 생성되어 Sn이 첨가되지 않은 123성형체 내부쪽으로 성장하였다. $1100^{\circ}C$에서 48시간 유지한 후 $970^{\circ}C$에서 1시간 유지한 시편에서는 123상이 관찰되지 않았으며 Y-Ba-Sn으로 구성된 결정립이 관찰되었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.33.1-33.1
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• 2011

Strontium doped lanthanum manganite (LSM) with perovskite structure for SOFC cathode material shows high electrical conductivity and good chemical stability, whereas the electrical conductivity at intermediate temperature below $800^{\circ}C$ is not sufficient due to low oxygen ion conductivity. The approach to improve electrical conductivity is to make more oxygen vacancies by substituting alkaline earths (such as Ca, Sr and Ba) for La and/or a transition metal (such as Fe, Co and Cu) for Mn. Among various cathode materials, $LaSrMnCuO_3$ has recently been suggested as the potential cathode materials for solid oxide fuel cells (SOFCs). As for the Cu doping at the B-site, it has been reported that the valence change of Mn ions is occurred by substituting Cu ions and it leads to formation of oxygen vacancies. The electrical conductivity is also affected by doping element at the A-site and the co-doping effect between A-site and B-site should be described. In this study, the $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_{3{\pm}{\delta}}$ ($0{\leq}x{\leq}0.4$) systems were synthesized by a combined EDTA-citrate complexing process. The crystal structure, morphology, thermal expansion and electrical conductivity with different Sr contents were studied and their co-doping effects were also investigated.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.949-955
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• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.285-296
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• 2005

Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

• Current Applied Physics
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• 제18권11호
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• pp.1280-1288
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• 2018

In this work, we pointed out that Sr substitution for Ca leads to modify the magnetic and magnetocaloric properties of $Pr_{0.7}Ca_{0.3-x}Sr_xMnO_3$ compounds. Analyzing temperature dependence of magnetization, M(T), proves that the Curie temperature ($T_C$) increased with increasing Sr content (x); $T_C$ value is found to be 130-260 K for x = 0.0-0.3, respectively. Using the phenomenological model and M(T,H) data measured at several applied magnetic field, the magnetocaloric effect of $Pr_{0.7}Ca_{0.3-x}Sr_xMnO_3$ compounds has been investigated through their temperature and magnetic field dependences of magnetic entropy change ${\Delta}S_m$(T,H) and the change of the specific heat change ${\Delta}C_P$(T,H). Under an applied magnetic field change of 10 kOe, the maximum value of $-{\Delta}S_m$ is found to be about $3J/kg{\cdot}K$, and the maximum and minimum values of ${\Delta}C_P$(T) calculated to be about ${\pm}60J/kg{\cdot}K$ for x = 0.3 sample. Additionally, the critical behaviors of $Pr_{0.7}Ca_{0.3-x}Sr_xMnO_3$ compounds around their $T_C$ have been also analyzed. Results suggested a coexistence of the ferromagnetic short- and long-range interactions in samples. Moreover, Sr-doping favors establishing the short-range interactions.