• Journal of the Korean Magnetics Society
• /
• v.24 no.4
• /
• pp.101-106
• /
• 2014

The glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(2.3 nm)/NiFe(3 nm)/IrMn(12 nm)/Ta(5.8 nm) GMR-SV (giantmagneto-resistance-spin valve) multilayer structure films with a magnetoresistance ratio (MR) of 5.0 % and a magnetic sensitivity (MS) of 1.5%/Oe was deposited by dc magnetron sputtering method. Also, GMR-SV device having a width of $7{\mu}m{\sim}8{\mu}m$ similar to the diameter of RBC (red blood cell) was fabricated by the light lithography process. When RBCs coupled with several magnetic beads with a diameter of $1{\mu}m$ dropped upon the GMR-SV device having MR = 1.06% and MS = 0.3 %/Oe, there is observed the variation of about included of a resistance value of ${\Delta}R=0.4{\Omega}$ and ${\Delta}MR=0.15%$ around a external magnetic field of -0.6 Oe. From these results, the GMR-SV device having the width magnitude of a few micron size can be applied as the biosensor for the analysis of a new magnetic property of hemoglobin inside of RBC combined to magnetic beads.

• Journal of the Korean Magnetics Society
• /
• v.27 no.4
• /
• pp.115-122
• /
• 2017

The antiferromagnet IrMn based four different GMR-SV multilayers on Corning glass were prepared by using ion beam deposition and DC magnetron sputtering system. The magnetoresistance (MR) properties for single-type and dual-type GMR-SV multilayer films were investigated through the measured major and minor MR curves. The exchange bias coupling field ($H_{ex}$) and coercivity ($H_c$) of pinned layer, the $H_c$ and interlayer exchange coupling field ($H_{int}$) of free layer for the dual-type structure GMR-SV multilayer films consisted of top IrMn layer were 410 Oe, 60 Oe, 1.6 Oe, and 7.0 Oe, respectively. The minor MR curve of two free layers was performed the squarelike feature having a MR ratio of 8.7 % as the sum of 3.7 % and 5.0 %. The value of average magnetic field sensitivity (MS) was maintained at 2.0 %/Oe. Also, the magnetoresistance properties of the single-type and dual-type structure GMR-SV multilayer films consisted of bottom IrMn layer were decreased more than those of top IrMn layer. Two antiparallel states of magnetization spin arrays of the pinned and free layers in the dual-type GMR-SV multilayer films occurred the maximum MR value by the effect of spin dependence scattering.

• Journal of the Korean Vacuum Society
• /
• v.19 no.2
• /
• pp.128-133
• /
• 2010

ZnO:Al films were deposited by DC-pulsed magnetron sputtering using a two-step process involving the control of the oxygen pressure. The seed layers were prepared with various Ar to oxygen flow ratios and the bulk layers were deposited under pure Ar. As the oxygen pressure during the deposition of the seed layer increased, the crystallinity and degree of (002) texturing increased. The resistivity gradually decreased with increasing crystallinity from $4.7\times10^4\Omega{\cdot}cm$ (no seed) to $3.7\times10^4\Omega{\cdot}cm$ (Ar/$O_2$ = 9/1). The etched surface showed a crater-like structure and an abrupt morphology change appeared as the crystallinity was increased. The sample deposited at an Ar/$O_2$ flow ratio of 9/1 showed a very high haze value of 88% at 500 nm, which was explained by the large feature size of the craters, as shown in the AFM image.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.280-280
• /
• 2007

$Pb(Zr,Ti)O_3$ (PZT) 강유전체 박막은 높은 잔류 분극 (remanent polarization) 특성 때문에 현재 강유전체 메모리 (FeRAM) 소자에 적용하기 위하여 가장 활발히 연구되고 있다. 그런데 PZT 물질은 피로 (fatigue) 및 임프린트 (imprint) 등의 장시간 신뢰성 (long-term reliability) 특성이 취약한 단점을 가지고 있다. 이러한 신뢰성 문제를 해결할 수 있는 효과적인 방법 중의 하나는 $IrO_2$, $SrRuO_3$(SRO) 등의 산화물 전극을 사용하는 것이다. 많은 산화물 전극 중에서 SRO는 PZT와 비슷한 pseudo-perovskite 결정구조를 갖고 격자 상수도 비슷하여, PZT 커패시터의 강유전 특성 및 신뢰성을 향상시키는데 매우 효과적인 것으로 알려져 있다. 따라서 본 연구는 PZT 커패시터에 적용하기 위하여 SRO 박막을 증착하고 이의 전기적 특성 및 미세구조를 분석하고자 하였다. 또 실제로 SRO 박막을 상부전극과 PZT 사이의 버퍼 층 (buffer layer)으로 적용한 경우의 커패시터 특성도 평가하였다. 먼저 다결정 SRO 박막을 $SiO_2$/Si 기판 위에 DC 마그네트론 스퍼터링 법 (DC magnetron sputtering method)으로 증착하였다. 그 다음 이러한 SRO 박막의 미세구조, 결정성 및 전기적 특성이 증착 조건들의 변화에 따라서 어떤 경향성을 보이는지를 평가하였다. 기판 온도는 $350\;{\sim}\;650^{\circ}C$ 범위에서 변화시켰고, 증착 파워는 500 ~ 800 W 범위에서 변화시켰다. 또 Ar+$O_2$ 혼합 가스에서 산소의 혼합 비율을 20 ~ 50% 범위에서 변화시켰다. 이러한 실험 결과 SRO 박막의 전기적 특성 및 미세 구조는 기판의 증착 온도에 따라서 가장 민감하게 변함을 관찰할 수 있었다. 다른 증착 조건과 무관하게 $450^{\circ}C$ 이상의 온도에서 증착된 SRO 박막은 모두 주상정 구조 (columnar structure)를 형성하며 (110) 방향성을 강하게 나타내었다. 가장 낮은 전기 저항은 $550^{\circ}C$ 증착 온도에서 얻을 수 있었는데, 그 값은 약 $440\;{\mu}{\Omega}{\cdot}cm$ 이었다. SRO 버퍼 충을 적용하여 제작한 PZT 커패시터의 잔류 분극 (Pr) 값은 약 $30\;{\mu}C/cm^2$ 정도로 매우 높은 값을 나타내었고, 피로 손실 (fatigue loss)도 $1{\times}10^{11}$ 스위칭 사이클 후에 약 11% 정도로 매우 양호한 값을 나타내었다.

• Applied Chemistry for Engineering
• /
• v.33 no.1
• /
• pp.50-57
• /
• 2022

Ti-In-Zn-O (TIZO)/Ag/TIZO multilayer transparent electrodes were prepared on glass substrates at room temperature using RF/DC magnetron sputtering. Obtained multilayer structure comprising TIZO/Ag/TIZO (10 nm/10 nm/40 nm) with the total thickness of 60 nm showed a transmittance of 86.5% at 650 nm and a sheet resistance of 8.1 Ω/□. The multilayer films were expected to be applicable for use in energy-saving smart window based on polymer-dispersed liquid crystal (PDLC) because of their transmittance properties to effectively block infrared rays (heat rays). We investigated the effects of the content ratio of prepolymer, the thickness of the PDLC coating layer, and the ultraviolet (UV) light intensity on electro-optical properties, and the surface morphology of polyester acrylate-based PDLC systems using new TIZO/Ag/TIZO transparent conducting electrodes. A PDLC cell with a thickness of 15 ㎛ PDLC layer photocured at an UV intensity of 1.5 mW/cm² exhibited good driving voltage, favorable on-state transmittance, and excellent off-haze. The LC droplets formed on the surface of the polymer matrix of the PDLC composite had a size range of 1 to 3 ㎛ capable of efficiently scattering incident light. Also, the PDLC-based smart window manufactured using TIZO/Ag/TIZO multi-layered transparent electrodes in this study exhibited a light brown, which will have an advantage in terms of aesthetics.

• Journal of the Korean Vacuum Society
• /
• v.21 no.3
• /
• pp.142-150
• /
• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

• Journal of the Korean Electrochemical Society
• /
• v.13 no.2
• /
• pp.116-122
• /
• 2010

A $Cu_3Si$ film electrode is obtained by Si deposition on a Cu foil using DC magnetron sputtering, which is followed by annealing at $800^{\circ}C$ for 10 h. The Si component in $Cu_3Si$ is inactive for lithiation at ambient temperature. The linear sweep thermammetry (LSTA) and galvano-static charge/discharge cycling, however, consistently illustrate that $Cu_3Si$ becomes active for the conversion-type lithiation reaction at elevated temperatures (> $85^{\circ}C$). The $Cu_3Si$ electrode that is short-circuited with Li metal for one week is converted to a mixture of $Li_{21}Si_5$ and metallic Cu, implying that the Li-Si alloy phase generated at 0.0 V (vs. Li/$Li^+$) at the quasi-equilibrium condition is the most Li-rich $Li_{21}Si_5$. However, the lithiation is not extended to this phase in the constant-current charging (transient or dynamic condition). Upon de-lithiation, the metallic Cu and Si react to be restored back to $Cu_3Si$. The $Cu_3Si$ electrode shows a better cycle performance than an amorphous Si electrode at $120^{\circ}C$, which can be ascribed to the favorable roles provided by the Cu component in $Cu_3Si$. The inactive element (Cu) plays as a buffer against the volume change of Si component, which can minimize the electrode failure by suppressing the detachment of Si from the Cu substrate.

• Journal of the Korean Magnetics Society
• /
• v.12 no.6
• /
• pp.212-217
• /
• 2002

The pseudo spin valve with a structure of Tl/CoFe(t $\AA$)/Cu(30 $\AA$)/NiFe(50 $\AA$)/Ta, showing giant magnetoresistance properties by utilizing coercivity difference between only two soft ferromagnetic layers were produced by d.c UHV magnetron sputtering system. In pseudo spin valve Ta/CoFe/Cu/NiFe/Ta, the magnetic and magnetoresistance properties with change of CoFe thickness were investigated. When the thickness of CoFe was 60 $\AA$, a typical MR curve of pseudo spin valve structure was obtained, showing MR ratio of 3.8 cio and the coercivity difference of 27.4 Oe with a sharp change of hard layer switching. When the CoFe thickness was varied from 20 to 100 $\AA$, coercivity difference between two layers was increased to 40 $\AA$. and decreased to 100 $\AA$ gradually. It is thought the change in coercivity of hard layer was due to the crystallinity and magnetostriction of thin CoFe layer. In order to improve the MR property in CoFe/Cu/NiFe trier layer structure, CoFe layer with change of 2-20 $\AA$ thick was inserted between Cu and NiFe. When the thickness of CoFe was 10 $\AA$, MR ratio was 6.7％, showing excellent MR property. This indicates 50 ％ higher than that of CoFe/Cu/NiFe pseudo spin valve.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.251-251
• /
• 2016

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. Wastewaters are consisting of complex mixture of different inorganic and organic compounds and some of them can be toxic, hazardous and hard to degrade. These effluents are mainly treated by conventional technologies such are aerobic and anaerobic treatment and chemical coagulation. But, these processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that could be show higher purification results. Among them, boron doped diamond (BDD) attract attention as electrochemical electrode due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD on Nb, Ta, W and Si substrates, but, their application in effluents treatment is not suitable due to high cost of metal and low conductivity of Si. To solve these problems, Ti has been candidate as substrate in consideration of cost and property. But there are adhesion issues that must be overcome to apply Ti as BDD substrate. Al, Cu, Ti and Nb thin films were deposited on Ti substrate to improve adhesion between substrate and BDD thin film. In this paper, BDD films were deposited by hot filament chemical vapor deposition (HF-CVD) method. Prior to deposition, cleaning processes were conducted in acetone, ethanol, and isopropyl alcohol (IPA) using sonification machine for 7 min, respectively. And metal layer with the thickness of 200 nm were deposited by DC magnetron sputtering (DCMS). To analyze microstructure X-ray diffraction (XRD, Bruker gads) and field emission scanning electron microscopy (FE-SEM, Hitachi) were used. It is confirmed that metal layer was effective to adhesion property and improved electrode property. Electrochemical measurements were carried out in a three electrode electrochemical cell containing a 0.5 % H2SO4 in deionized water. As a result, it is confirmed that metal inter layer heavily effect on BDD property by improving adhesion property due to suppressing formation of titanium carbide.

• Journal of the Korean Ceramic Society
• /
• v.39 no.10
• /
• pp.935-942
• /
• 2002

Gallium-doped ZnO (GZO) films were deposited on soda-lime glass substrate without heating using Ne, Ar, or Kr gas. Electrical properties of GZO films deposited at various total gas pressures were investigated for the film positions corresponding to the erosion region (region B) and outside the erosion region (region A) of the target. Region B showed high resistivity, which was attributed to the decrease in carrier density and Hall mobility, compared to region A. GZO films deposited using Ne gas showed the degradation in resistivity and crystallinity, whereas, GZO films deposited using Kr gas showed the improvement in resistivity and crystallinity. This degradation in film properties could be attributed to the film damage caused by the bombardment of high-energy particles. Especially, the energies of recoiled neutral atoms ($Ne^0,\;Ar^0,\;Kr^0$) calculated by Monte Carlo simulation corresponded to experimental results.