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http://dx.doi.org/10.4191/KCERS.2002.39.10.935

Electrical Properties of Sputtered Gallium-doped Zinc Oxide Films Deposited Using Ne, Ar, or Kr Gas  

Song, Pung-Keun (Department of Chemistry, College of Science and Engineering, Aoyama Gakuin University)
Ryu, Bong-Ki (Department of Inorganic Materials Engineering, Pusan National University)
Kim, Kwang-Ho (Department of Inorganic Materials Engineering, Pusan National University)
Publication Information
Journal of the Korean Ceramic Society / v.39, no.10, 2002 , pp. 935-942 More about this Journal
Abstract
Gallium-doped ZnO (GZO) films were deposited on soda-lime glass substrate without heating using Ne, Ar, or Kr gas. Electrical properties of GZO films deposited at various total gas pressures were investigated for the film positions corresponding to the erosion region (region B) and outside the erosion region (region A) of the target. Region B showed high resistivity, which was attributed to the decrease in carrier density and Hall mobility, compared to region A. GZO films deposited using Ne gas showed the degradation in resistivity and crystallinity, whereas, GZO films deposited using Kr gas showed the improvement in resistivity and crystallinity. This degradation in film properties could be attributed to the film damage caused by the bombardment of high-energy particles. Especially, the energies of recoiled neutral atoms ($Ne^0,\;Ar^0,\;Kr^0$) calculated by Monte Carlo simulation corresponded to experimental results.
Keywords
Gallium doped zinc oxide; DC magnetron sputtering; Transparent conductive oxide; Recoiled neutral atoms; Electrical properties;
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Times Cited By KSCI : 2  (Citation Analysis)
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