• 대한수의학회지
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• 제42권1호
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• pp.35-43
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• 2002

Cryopreservation is commonly used for an efficient utilization of semen, oocytes and embryos but has disadvantage in the survival, development of the post-thawed eggs. The high risk in the survival, development of eggs after thawing is thought to be caused by inappropriate internal regulation of $Ca^{2+}$ and/or formation of intracellular ice crystals. In this experiment, we tested whether the $Ca^{2+}$ current (iCa), a decisive factor to $Ca^{2+}$ entry, was altered in post-thawed oocytes by using whole cell voltage clamp technique. The quality and survival rates of the oocytes derived from both fresh and frozen groups were examined by morphology and FDA-test. Vitrified oocytes (VOs) were incubated for 4 hr after thawing and then donated to this experiment. Ethyleneglycol-ficoll-galactose (EFG) was used as a cryoprotectant for vitrification. The membrane potential was held at -80 mV and step depolarizations of 250 ms were applied from -50 mV to 50 mV in 10 mV increments. The survival rates showed a higher in VOs vitrified with EFG containing $Ca^{2+}$ than in VOs vitrified with EFG under the $Ca^{2+}$-free condition (82.0% vs 14%). In group with/without $Ca^{2+}$, the survival rates were significantly (P<0.01) difference. In the fresh metaphase II oocytes (FOs), current-voltage (I-V) relationship showed that iCa began to activate at -40 mV and reached its maximum at -10 mV. With same voltage pulses, inward currents were elicited in VOs. I-V relationships observed in VOs were similar to those in FOs. Time constants of activation and inactivation of the inward current shown in VOs were not different to those in FOs. This accordance in I-V relations and time constants in FOs with those in VOs indicates that the inward currents in FOs are unaltered by vitrification and thawing. Therefore, vitrification with EFG does not play as a factor to deteriorate $Ca^{2+}$ entry across the membrane of the oocytes.

• 대한전기학회논문지:전력기술부문A
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• 제55권1호
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• pp.7-12
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• 2006

This paper proposes the new voltage event detection method using the weight factor of neural network and describes control system design for the DVR(Dynamic Voltage Restorer) consisted of a rectifier and series inverter applied to 22.9kV distribution system. As this method can express the fault level of each phase, we expect the proposed method can make up for disadvantage of synchronous detection method. Also, in this paper, the control system was designed using double deadbeat controller, As it has an inner current control loop and an outer voltage control loop, we can easily limit the current level during the transient intervals by using the current control loop. Simulation and experiment are performed to prove the analysis of the voltage event detection method and double deadbeat controller.

• 전기학회논문지P
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• 제59권1호
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• pp.112-116
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• 2010

Fuel cell as a renewable energy source is clean and has a lot of advantages. The source can solve energy crisis and environmental problems such as greenhouse effect, air pollution and the ozone layer destruction. This paper introduces hybrid system(hydro-Genius Professional, heliocentris) of solar cell and fuel cell. Also, this paper shows the I-P, V-I characteristics of fuel cells which are connected in parallel and series. From these results, we also found the maximum power was transferred at 0.5[${\Omega}$]. The terminal voltage was also decreased according to the current because of the internal resistance. The power transfer in series was two times than that in parallel.

• Journal of information and communication convergence engineering
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• 제2권2호
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• pp.93-96
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• 2004

The a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_{3}N_{4}$. Ferroelectric increases on-current, decreases threshold voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, retractive index of 1.8∼2.0 and resistivity of $10^{13}$~$10^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60∼100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8∼20 $\mu\textrm{m}$ and channel width of 80∼200 $\mu\textrm{m}$. And it shows that drain current is 3.4$\mu\textrm{A}$ at 20 gate voltage, $I_{on}$/$I_{off}$ is a ratio of $10^5$~$10^8$ and $V_{th}$ is 4∼5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $\mu\textrm{A}$ at 20 gate voltage and $V_{th}$ is 5∼6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• 전기학회논문지P
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• 제58권4호
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• pp.602-608
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• 2009

In this thesis, output voltage, current and power of solar module were classified by irradiation from data of overall operating characteristics collected for one year in order to manage efficient photovoltaic generation system and deliver maximum power. In addition, from these data, correlations between irradiation of photovoltaic cell and amount of power given by photovoltaic cell was quantitatively examined to deduce optimization of the design and construction of photovoltaic generation system. As I-V characteristics according to a temperature range of 10~50[$^{\circ}C$], the area of I-V characteristics were increased with an increase in temperature. Since this area corresponds to the power, output power is thought to have increased with temperature. As output power characteristics according to a temperature range of 10~50[$^{\circ}C$], output power was increased with an increase in temperature. Since output power increases with temperature increase, the result corresponds well to the related equation on temperature and output power. As I-V characteristics according to a irradiation range of 100~900 [$W/m^2$], voltage and current were increased with an increase in irradiation. The result is thought of as an increase in output power with increasing irradiation. As output power characteristics according to a irradiation range of 100~900 [$W/m^2$], output power was increased with increasing irradiation. This result corresponds well to the related equation on irradiation and output power.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.263-266
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• 1999

Electrolunlinescent devices based on conjugated polymer emitting materials have been much attracted possible applications for multicolor flat panel display, since the conjugated polymers have a small band gap emitting obtained at a low driving voltage. In this paper, we fabricated the single layer EL device using poly(3-hexylthiophene) as emitting material Electroluminescence(EL) and I-V-L characteristics of indium-tin-oxide[ITO]P3HT/AI device with a various thickness were investigated. It was demonstrate that the I-V characteristics depend, not the voltage but the electric- field strength, The current is dependent on the electric filed and not on the applied voltage, indicating that the carriers are injected by a tunneling process. In the device, the barrier to hole injection is only 0.5eV and the barrier to electron injection is 1.5eV.

• 대한수의학회지
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• 제32권2호
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• pp.157-164
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• 1992

Changes in the both inward current and conductance of membrane by the fertilization were observed using the one microelectrode voltage clamp(or switch clamp) technique. Unfertilized eggs and both 1- and 2-cell stage eggs after fertilization were donated from the superovulated mouse (ICR, more than 6 weeks old) treated with PMSG(pregnant mare serum gonadotropin, Sigma) and HCG(human chorionic gonadotropin, Sigma) and naturally mated ones, respectively in this experiment. Membrane potential was held at -90mV and the voltage step was applied from -80mV to 50mV with interval of 10mV or 20mV for 300ms. since both of amplitudes and time courses in the membrane currents were various according to the states of cells and clamping condition, results were presented by their $averages{\pm}SEM$(standard mean error)and ratios or percentages. Inward currents began to appear in response to the step depolarization from -60mV and reached its maximum at -50mV. However, since the potential was not clamped evenly during the voltage step, current-voltage(I-V) relationship might be positively shifted 10 or 20mV. From the steady-state currents plotted in the I-V curve, outward rectification was markedly observed. Peak inward currents$(i_{in})$ at -50mV were $-0.62{\pm}0.23nA$(n=4),$-0.52{\pm}0.25nA$(n=5) and $-0.37{\pm}0.25nA$(n=6), in the 1-cell stage, 2-cell stage fertilized eggs and in the unfertilized eggs, respectively. Pure inward current (difference between steady-state and peak, $i_{in. pure}$) were $-1.01{\pm}0.23nA$, $-0.69{\pm}0.43nA$ and $-0.68{\pm}0.29nA$, respectively in the 1-cell stage fertilized eggs, unfertilized eggs and 2-cell stage fertilized eggs. These results suggested that the outward current in fertilized eggs of 2-cell stage was more increased than those in the unfertilized eggs. Pure inward currents in the all stages of eggs showed a similar fashion in the I-V relationship from -50mV to 50mV and reversal potential at 50mV. Time constant of inactivation$({\tau})$ in the inward current was decreased as the membrane potential was depolarized in the unfertilized and 2-cell stage eggs but in the 1-cell stage eggs t was not likely to be affected significantly. Slope conductances were 14.2nS, 8.9n5 and 7.7nS in the 1-cell, 2-cell stage fertilized eggs and the unfertilized eggs, respectively. Membranes between two cells within a zona pellucida seem to be electrical-connected in the 2-cell stage eggs from the observation made in the analysis for the electronic spread and decay to the current stimuli. Both of inward current and membrane conductance were increased after fertilization in the mouse eggs. Inward current seems to be carried by the same ion or through the same channels up to the 2-cell stage and ion that carried inward current was thought to play important function after fertilization in the mouse eggs.

• 한국표면공학회지
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• 제38권2호
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• pp.73-78
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• 2005

A real-time monitoring of ICP(inductively coupled plasma) assisted magnetron sputtering of MgO was carried out using a QMS(quadrupole mass spectrometer), an OES(optical emission spectrometer), and a digital oscilloscope with a high voltage probe and a current monitor. At the time of ICP ignition, the most distinct impurity was OH emission (308.9 nm) which was dissociated from water molecules. For reactive deposition oxygen was added to Ar and the OH emission intensity was reduced abruptly When the discharge voltage was regulated by a PID controller from 240V(metallic mode) to 120V(oxide mode), the emission intensity from Mg (285.2 nm) changed proportionally to the discharge voltage, but the intensity of Ar I(811.6 nm) was constant. At 100V of discharge voltage, Mg sputtering was almost stopped. Emissions from Ar I(420.1 nm) and Mg I were dropped down to 1/10, but Ar I(811.6 nm) didn't change. And the emission from atomic oxygen (O I, 777.3 nm) was increased to 10 times. These results are compatible with those from QMS study.

• 전자공학회논문지D
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• 제36D권4호
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• pp.77-85
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• 1999

본 논문은 진성영역에서 공핍증 폭이 선형적으로 변화한다는 가정을 도입하고 전자이동도의 수평 및 수직 전계 이존성을 고려하여 단채널 MOSFET의 {{{{ { I-V }_{ } }}}} 특성에 대한 해석적 모형을 제시하였다. 이 모형으로부터 전 동작영역에 걸쳐 적용되는 문턱전압 방정식과 드레인전류 방정식을 도출하였다. 본 모형의 타당성을 검토하기 위하여 위 식들의 계산을 수행하였고, 그 결과 채널길이가 짧아짐에 따라 문턱전압이 지수함수적으로 감소하였으며, 아울러 채널길이변조, 채널이동로 열화 등을 본 모형에 의하여 일괄적으로 설명할 수 있었다.