• Title/Summary/Keyword: current structure

Search Result 6,961, Processing Time 0.035 seconds

A BJT Structure with High-Matching Property Fabricated Using CMOS Technology (CMOS 기술을 기반으로 제작된 정합 특성이 우수한 BJT 구조)

  • Jung, Yi-Jung;Kwon, Hyuk-Min;Kwon, Sung-Kyu;Jang, Jae-Hyung;Kwak, Ho-Young;Lee, Hi-Deok
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.49 no.5
    • /
    • pp.16-21
    • /
    • 2012
  • For CMOS based bipolar junction transistor (BJT), a novel BJT structure which has higher matching property than conventional BJT structure was proposed and analyzed. The proposed structure shows a slight decrease of collector current density, $J_C$ about 0.361% and an increase of current gain, ${\beta}$ about 0.166% compared with the conventional structure. However, the proposed structure shows a decrease of area about 10% the improvement of matching characteristics of collector current ($A_{IC}$) and current gain ($A_{\beta}$) about 45.74% and 38.73% respectively. The improved matching characteristic of proposed structure is believed to be mainly due to the decreased distance between two emitters of pair BJTs, which results in the decreased effect of deep n-well of which resistance has the higher standard deviation than the other resistances.

Grounding Resistance and Current Characteristics of the Planar Earth Structure using Multiple Discharge Paths (다중방전 경로를 이용한 편상접지체의 접지저항 및 전류특성)

  • Kim, Young-Sun;Kim, Dong-Min;Lee, Ki-Sik
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.65 no.9
    • /
    • pp.1564-1570
    • /
    • 2016
  • This study proposes a newly modified form of existing ground electrodes in order to secure trust of grounding system for large current caused by a stroke of lightning. Proposed planar earth structure has a several needle electrodes around a circular rod and 4 plane electrodes in all directions. The plane electrodes are fused with the insulator on the linear rod, so that they're electrically isolated. The concept is to increase the discharge amount of earth structure using multiple discharge paths like needle and plane electrodes. To check the discharge efficiency of the suggested scheme, the discharge currents are compared with typically used two kinds of ground rods. To ensure accuracy in the measurement of the discharge current, the same material was used for the comparison model. Also, the ground resistance are simulated by CDEGS commercial software and the results are compared with measured data. Based on this kind of experimental study, the suggested ground rod can be used when designing a ground system or when constructing a ground system at the site.

Analysis of Lightning Current Distribution for Reducing the Conductive EMI in a Structure (도전성 EMI 저감을 위한 구조체의 뇌격전류 분류율 분석)

  • Cho, Sung-Chul;Lee, Tae-Hyung;Eom, Ju-Hong;Lee, Bok-Hee
    • Proceedings of the KIEE Conference
    • /
    • 2011.07a
    • /
    • pp.1630-1631
    • /
    • 2011
  • Lightning current distribution in a building directly hit was studied by using a scaled steel frame structure model. As the test current source, impulse current with the rise time of 10 ${\mu}s$ and sinusoidal current with the frequency of 30 kHz were used to confirm the validity of test results. The current distributions at both horizontal and vertical pillars were measured by using CT. From the test results, the reduction effect for the conductive EMI was verified and a design method reducing the conductive EMI was proposed.

  • PDF

A Low Dark Current CMOS Image Sensor Pixel with a Photodiode Structure Enclosed by P-well

  • Han, Sang-Wook;Kim, Seong-Jin;Yoon, Eui-Sik
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.5 no.2
    • /
    • pp.102-106
    • /
    • 2005
  • A low dark current CMOS image sensor (CIS) pixel without any process modification is developed. Dark current is mainly generated at the interface region of shallow trench isolation (STI) structure. Proposed pixel reduces the dark current effectively by separating the STI region from the photodiode junction using simple layout modification. Test sensor array that has both proposed and conventional pixels is fabricated using 0.18 m CMOS process and the characteristics of the sensor are measured. The result shows that the dark current of the proposed pixel is 0.93fA/pixel that is two times lower than the conventional design.

Analysis of eddy current loss in high-Tc superconducting power cables with respect to various structure of stabilizer (초전도 전력 케이블에서의 stabilizer의 형태에 따른 와전류 손실 해석)

  • Choi S. J.;Song M. K.;Lee S. J.;Sim K. D.;Cho J. W.
    • Progress in Superconductivity
    • /
    • v.7 no.1
    • /
    • pp.83-86
    • /
    • 2005
  • The High-Tc superconducting power cable consists of a multi-layer high-Tc superconducting cable core and a stabilizer which is used to bypass the current at fault time. Eddy current loss is generated in the stabilizer in normal operating condition and affects the whole system. In this paper, the eddy current losses are analyzed with respect to various structure of stabilizer by using opera-3d. Moreover, optimal conditions of the stabilizer are derived to minimize the eddy current losses from the analyzed results. The obtained results could be applied to the design and manufacture of the high-Tc superconducting power cable system.

  • PDF

Electrical characteristics of polysilicon thin film transistors with PNP gate (PNP 게이트를 가지는 폴리 실리콘 박막 트랜지스터의 전기적 특성)

  • 민병혁;박철민;한민구
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.33A no.3
    • /
    • pp.96-106
    • /
    • 1996
  • One of the major problems for poly-Si TFTs is the large off state leakage current. LDD (lightly doped drain) and offset gated structures have been employed in order to reduce the leakage current. However, these structures also redcue the oN current significantly due to the extra series resistance caussed by the LDD or offset region. It is desirable to have a device which would have the properties of the offset gated structure in the OFF state, while behaving like a fully gated device in the oN state. Therefore, we propose a new thin film transistor with pnp junction gate which reduce the leakage curretn during the OFF state without sacrificing the ON current during the ON state.

  • PDF

Design of the Self-Calibrated OJA Converter with Current Source Matrix Stricture (셀프 캘리브레이션 기법을 이용한 행렬 디코딩 D/A 컨버터의 설계에 관한 연구)

  • 임현욱;강호철;김순도;성만영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1998.06a
    • /
    • pp.243-246
    • /
    • 1998
  • This paper presents a 6-bit self-calibrated D/A converter designed with current cell matrix structure. This structure is based on the current-cell matrix configuration using a regulated gate cascode current cell with 3-way switch. using from CMOS process and 5V power supply, the simulated conversion rate is 45.78MHz and the average mismatching properties among current sources are reduced to 0.02% and 0.005%, respectively when 1% and 0.5% errors of current sources are considered.

  • PDF

Factors Affecting the Financial Structure of Hospitals in Korea (병원의 재무구조에 영향을 미치는 요인)

  • 최만규;문옥륜;황인경
    • Health Policy and Management
    • /
    • v.12 no.2
    • /
    • pp.43-75
    • /
    • 2002
  • This study focuses on the factors that make the financial structure of hospitals in Korea different, and on recommended courses of action that could be very helpful to hospitals in maintaining a sound financial structure. Data used in this study were collected from 132 hospitals with complete general data of present conditions as well as financial statements. They were chosen from the 174 hospitals that passed the standardization audit undertaken by the Korean Hospital Association from 1996 to 2000 for the purpose of accrediting training hospitals. The dependent variable in this study is financial structure. It consists of liabilities as against total assets (total liabilities to total assets, short-term liabilities to total assets, long-term liabilities to total assets, short-term borrowings to total assets, long-term borrowings to total assets). The independent variables are ownership type, hospital type, location, whether or not a representative is a director of the hospital, the possibility of changing a hospital director, bed size, period of establishment, asset structure, profitability, growth, tax shields, business risk, competition. The factors that appear to have the strongest impact on the liabilities to total assets of all the hospitals sampled are ownership type, hospital type, profitability, tax shields, and business risk. It was found that not-for-profit private hospitals and for-profit private hospitals have more liabilities than public hospitals, and tertiary medical institutions have less liabilities than the secondary general hospitals. Moreover, hospitals earning more at the expense of high business risk have a distinct tendency to lower liabilities. Concerning the current ratio, it was found that factors such as ownership type, hospital type, period of establishment, asset structure, and business risk are the more significant variables. The current ratio of public hospitals is higher than that of both not-for-profit private hospitals and for-profit private hospitals, and the current ratio of tertiary medical institutions is higher than that of general hospitals. As business risk is higher in hospitals compared to other businesses, the current ratio becomes higher; this is because it is assumed that for fear of bankruptcy, hospitals lessen liabilities to total assets. On the other hand, as hospitals become older, the fixed assets to total assets become lower. It is remarkable that in hospitals, the factors affecting liabilities to total assets have an opposite regression coefficient sign against factors affecting current ratio. It brings out the same results borne out by the old financial theories and researches, in which a lot of the liabilities of hospitals are considered as the cause of worsening liquidity. Therefore, it is very important for hospitals to maintain a sound financial structure in order to survive using the rational acquisition and maintenance of capital.

A comparative study of electrical properties of arachidic acid LB films in the Al/LB/Al and Au/LB/Au electrode structure (Al/LB/Al, Au/LB/Au 전극 구조에서 arachidic acid LB막의 전기적 특성에 관한 비교 연구)

  • 오세중;김정수
    • The Transactions of the Korean Institute of Electrical Engineers
    • /
    • v.44 no.10
    • /
    • pp.1311-1316
    • /
    • 1995
  • The electrical properties of the Langmuir-Blodgett (LB) films layered with arachidic acid were studied at the room temperature. The sample was formed with 2 different structure ; One was Al/LB/Al and the other was Au/LB/Au. The precise structure of Al/LB/Al was considered as Al/Al$_{2}$O$_{3}$/LB/Al, because the natural oxide layer was formed on surface of lower Al electrode. The electrical conductivity of Al/Al$_{2}$O$_{3}$/LB/Al structure was determined the value of 3.5 * 10$^{-14}$ S/cm from the measurement of current-voltage (I-V) characteristics. The sample with the structure of Au/LB/Au was made to eliminate the influence of oxide layer in the electrical properties of the LB films. The short circuit current was observed in this sample from the I-V characteristics. To verify the reason of short circuit current generation, copper decoration method was employed to the 15 layers of LB films deposited on the Al and Au electrode each. The defects were shown on the films deposited with Au electrode. This results means that the defects on the LB films which layered with the Au electrode were contributed to the short circuit current. Several films (15, 31, 51, 71L) were deposited on the Au electrode and measured the size of defects with the copper decoration method. The size of defects becomes smaller as the film layer was increased. We conclude that the existence of defects affects the short circuit current generation.

  • PDF

On the detection of faults on digital logic circuits using current sensor (전류 센서를 이용한 디지탈 논리회로의 고장 검출)

  • 신재흥;임인칠
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.33A no.2
    • /
    • pp.173-183
    • /
    • 1996
  • In this paper, a new structure that can do fault detection and location of digial logic circuits more efficiently using current testing techniques is proposed. In the conventional method, observation point for steady state power supply current was only one, but in the proposed method more fault classes are divided for fault detection and location through the ovservation of steady state power supply current at two points. Also, it is shown that this structure can be easily applied in detection of stuck-open fault which is not easy to do testing with conventional current testing techniques. In the presented mehtod, an extra trasnistor is used, and current path is made compulsorily in the CMOS circuits in which no current path can be established in steady state, then it can be known that stuck-open tault is in the MOS transistor on the considering current path, if this path disappears due to stuck-open fault. The validity and the effectiveness is shwon, thorugh the SPICE simulation of circuits with fault and the current path search experiment using current path search program based on transistor short model wirtten in C language on SUN sparc workstation.

  • PDF