• Title/Summary/Keyword: current mode sensor

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High Efficiency Bridgeless Power Factor Correction Converter With Improved Common Mode Noise Characteristics (우수한 공통 모드 노이즈 특성을 가진 브릿지 다이오드가 없는 고효율 PFC 컨버터)

  • Jang, Hyo-Seo;Lee, Ju-Young;Kim, Moon-Young;Kang, Jeong-Il;Han, Sang-Kyoo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.27 no.2
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    • pp.85-91
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    • 2022
  • This study proposes a high efficiency bridgeless Power Factor Correction (PFC) converter with improved common mode noise characteristics. Conventional PFC has limitations due to low efficiency and enlarged heat sink from considerable conduction loss of bridge diode. By applying a Common Mode (CM) coupled inductor, the proposed bridgeless PFC converter generates less conduction loss as only a small magnetizing current of the CM coupled inductor flows through the input diode, thereby reducing or removing heat sink. The input diode is alternately conducted every half cycle of 60 Hz AC input voltage while a negative node of AC input voltage is always connected to the ground, thus improving common mode noise characteristics. With the aim to improve switching loss and reverse recovery of output diode, the proposed circuit employs Critical Conduction Mode (CrM) operation and it features a simple Zero Current Detection (ZCD) circuit for the CrM. In addition, the input current sensing is possible with the shunt resistor instead of the expensive current sensor. Experimental results through 480 W prototype are presented to verify the validity of the proposed circuit.

High Performance Current Sensing Circuit for Current-Mode DC-DC Buck Converter

  • Jin, Hai-Feng;Piao, Hua-Lan;Cui, Zhi-Yuan;Kim, Nam-Soo
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.1
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    • pp.24-28
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    • 2010
  • A simulation study of a current-mode direct current (DC)-DC buck converter is presented in this paper. The converter, with a fully integrated power module, is implemented by using sense method metal-oxide-semiconductor field-effect transistor (MOSFET) and bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. When the MOSFET is used in a current sensor, the sensed inductor current with an internal ramp signal can be used for feedback control. In addition, the BiCMOS technology is applied in the converter for an accurate current sensing and a low power consumption. The DC-DC converter is designed using the standard $0.35\;{\mu}m$ CMOS process. An off-chip LC filter is designed with an inductance of 1 mH and a capacitance of 12.5 nF. The simulation results show that the error between the sensing signal and the inductor current can be controlled to be within 3%. The characteristics of the error amplification and output ripple are much improved, as compared to converters using conventional CMOS circuits.

Charging and Persistent-Current Mode Operating Characteristics of BSCCO Magnet Using High-Tc Superconducting Power Supply (고온 초전도 전원장치를 이용한 BSCCO Magnet의 충전 및 영구전류 운전 특성)

  • Jo, Hyun-Chul;Yang, Seong-Eun;Kim, Young-Jae;Hwang, Young-Jin;Yoon, Yong-Soo;Chung, Yoon-Do;Ko, Tae-Kuk
    • Progress in Superconductivity and Cryogenics
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    • v.11 no.1
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    • pp.30-34
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    • 2009
  • This paper deals with charging and persistent-current mode operating characteristics of BSCCO magnet load using high-temperature superconducting (HTS) power supply. The HTS power supply consists of two heater-triggered switches, an iron-core transformer with the primary copper winding and the secondary BSCCO solenoid, and a BSCCO magnet load. The magnet load was fabricated by double pancake winding and its inductance is about 21 mH. A hall sensor was installed at the middle of the magnet load to measure the current in the load. In order to investigate the efficient pumping characteristics, operating tests of heater-triggered switch with respect to dc heater current were carried out, and the electromagnet current was determined by considering saturation characteristics of its iron core. The saturation characteristics of charged current in the magnet load were observed with respect to various pumping periods: 12 s, 14 s, 24 s and 32 s. After charging the magnet load, the persistent current was measured. The operating characteristics of the persistent current mode were mainly determined by joint resistance and magnet load.

A Sensing Scheme Utilizing Current-Mode Comparison for On-Chip DC-DC Converter (온칩 DC-DC 변환기를 위한 전류 비교 방식의 센서)

  • Kim, Hyung-Il;Song, Ha-Sun;Kim, Bum-Soo;Kim, Dae-Jeong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.4
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    • pp.86-90
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    • 2007
  • An efficient sensing scheme applicable to DC-DC converters is proposed. The output voltage of the DC-DC converter is fed back and converted to a current signal at the input terminal of the sensor to decide if it is in the tolerable range. The comparison is accomplished by a current push-pull action. With the embedded reference current in the sensor realized from the reference voltage. The advantages of the scheme lie in the fairly accurate and efficient implementation in terms of power consumption and chip size overhead compared with conventional voltage-mode schemes as the major parameter in converting voltage to current is determined by (W/L) aspect ratio of the core transistors. In this paper, a DC-DC converter of 5V output from battery range of 2.2V${\sim}$3.6V adopting the proposed sensing scheme is implemented in a 0.35um CMOS process to prove the validity of the scheme.

Dual Mode AMOLED Pixel Circuit

  • Bae, Byung-Seong;Son, Yong-Duck;Jang, Jin;Lee, Ki-Yong;Chung, Ho-Kyoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1082-1085
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    • 2006
  • We proposed dual mode pixel circuit in AMOLED (active matrix organic light emitting device). After light emitting period of OLED, we used it as a photo sensor. We measured photo current of OLED and simulated the proposed pixel circuit to verify it's function of dual mode, that is lighting and sensing.

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On-chip Magnetic Sensor with Embedded High Inductance Coil for Bio-magnetic Signal Measurement (생체자기 신호측정을 위한 고인덕턴스 코일 내장형 온칩 자기센서)

  • Lyu, HyunJune;Choi, Jun Rim
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.6
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    • pp.91-98
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    • 2013
  • Magnetic sensor chip for measuring bio-magnetism is implemented in $0.18{\mu}m$ CMOS technology. The magnetic sensor chip consists of a small-sized high inductance coil sensor and an instrumentation amplifier (IA). High inductance coil sensor with suitable sensitivity and bandwidth for measurement of bio-magnetic signal is designed using electromagnetic field simulation. Low gm operational transconductance amplifier (OTA) using transconductance reduction techniques is designed for on-chip solution. Output signal sensitivity of magnetic sensor chip is $3.25fT/{\mu}V$ and reference noise of 21.1fT/${\surd}$Hz. Proposed IA is designed along with band pass filters(BPF) to reduce magnetic signal noise by using current feedback techniques. Proposed IA achieves a common mode rejection ratio of 117.5dB while the input noise referred is kept below $0.87{\mu}V$.

Current Modeling for Accumulation Mode GaN Schottky Barrier MOSFET for Integrated UV Sensors

  • Park, Won-June;Hahm, Sung-Ho
    • Journal of Sensor Science and Technology
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    • v.26 no.2
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    • pp.79-84
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    • 2017
  • The drain current of the SB MOSFET was analytically modeled by an equation composed of thermionic emission and tunneling with consideration of the image force lowering. The depletion region electron concentration was used to model the channel electron concentration for the tunneling current. The Schottky barrier width is dependent on the channel electron concentration. The drain current is changed by the gate oxide thickness and Schottky barrier height, but it is hardly changed by the doping concentration. For a GaN SB MOSFET with ITO source and drain electrodes, the calculated threshold voltage was 3.5 V which was similar to the measured value of 3.75 V and the calculated drain current was 1.2 times higher than the measured.

Design of a Built-In Current Sensor for CMOS IC Testing (CMOS 집적회로의 테스팅을 위한 새로운 내장형 전류감지 회로의 설계)

  • Hong, Seung-Ho;Kim, Jeong-Beom
    • Proceedings of the KIEE Conference
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    • 2003.11b
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    • pp.271-274
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    • 2003
  • This paper presents a Built-in Current Sensor that detect defects in CMOS integrated circuits using the current testing technique. This scheme employs a cross-coupled connected PMOS transistors, it is used as a current comparator. Our proposed scheme is a negligible impart on the performance of the circuit undo. test (CUT). In addition, in the normal mode of the CUT not dissipation extra power, high speed detection time and applicable deep submicron process. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects. The entire area of the test chip is $116{\times}65{\mu}m^2$. The BICS occupies only $41{\times}17{\mu}m^2$ of area in the test chip. The area overhead of a BICS versus the entire chip is about 9.2%. The chip was fabricated with Hynix $0.35{\mu}m$ 2-poly 4-metal N-well CMOS technology.

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A New Sensorless Control Scheme Using Simple Duty Feedback Technique in DC-DC Converters (DC-DC 컨버터에서 Duty Feedback 을 이용한 새로운 센서리스 제어 기법)

  • Noh Hyeong-Ju;Lee Dong-Yun;Hyun Dong-Seok
    • Proceedings of the KIPE Conference
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    • 2001.12a
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    • pp.115-118
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    • 2001
  • This paper presents a new sensorless control scheme using simple duty signal feedback technique in DC-DC converters. The proposed sensorless control scheme (DFC) has the characteristics that they show the same as operation performance of current mode control by using duty feedback technique without current sensor as well as present better dynamic response performance than conventional sensorless current mode control (SCM) in case that input source is perturbed by step change or DC input source includes the . harmonics. Also, the proposed control scheme has good noise immunity and simple control circuits since they have one feedback loop, and can be applied to all DC-DC converters. The concept and control principles of the proposed control scheme are explained in detail and the validity of the proposed control scheme is verified through several interesting simulated results.

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Fabrication and Characterization of Photo-Sensors for Very Small Scale Image System (초소형 영상시스템을 위한 광센서 제조 및 특성평가)

  • Shin, K.S.;Paek, K.K.;Lee, Y.S.;Lee, Y.H.;Park, J.H.;Ju, B.K.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04a
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    • pp.187-190
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    • 2000
  • We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.

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