• Title/Summary/Keyword: current amplifier

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Low-Voltage Current Feed-back Amplifier

  • Wisetphanichkij, Sompong;Dejhan, Kobchai;Suklueng, Montri
    • 제어로봇시스템학회:학술대회논문집
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    • 2005.06a
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    • pp.1877-1880
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    • 2005
  • This paper proposed the new current feed-back amplifier for low supply voltage application. The input stage was designed to be a class-AB circuit and achieve the low supply-voltage operation down to $2V_{TH}+2V_{DS(SAT)}$. With the self-adjust bias current, the high performance can be adopted with high stability. The circuit was successfully proven by the simulation with MOSIS 0.5 ${\mu}$m MOS technology.

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A Current-controlled CMOS operational transconductance amplifier (전류- 제어 CMOS operational transconductance amplifier)

  • Chung, W.S.;Cha, H.W.;Kim, H.B.;Rho, S.R.
    • Proceedings of the KIEE Conference
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    • 1988.07a
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    • pp.563-566
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    • 1988
  • A current-controlled CMOS operational transconductance amplifier(OTA), whose transconductance is directly proportional to the DC bias current, has been developed for many electronic circuit applications. It features that its transconductance is insensitive to temperature unlike that of the bipolar OTA. This property makes it possible to use the proposed OTA as a basic buliding block in electrically variable circuit design. The SPICE simulation shows that the conversion sensitivity of the circuit is 44.62 mv /${\mu}A$ and the linearity error less than 0.54 % over a bias current range from 2 ${\mu}A$ to 120 ${\mu}A$ when the output is loaded with a 1${\Omega}$ resistor.

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Performance Analysis of 6.78MHz Current Mode Class D Power Amplifier According to Load Impedance Variation (부하 임피던스 변화에 따른 6.78MHz 전류모드 D급 전력증폭기 특성 해석)

  • Go, Seok-Hyeon;Park, Dae-kil;Koo, Kyung-Heon
    • Journal of Advanced Navigation Technology
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    • v.23 no.2
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    • pp.166-171
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    • 2019
  • This paper has designed a current mode class D power amplifier to increase the transmission efficiency of a 6.78 MHz wireless power transfer (WPT) transmitter and to ensure stable characteristics even when the transmitting and receiving coil intervals change. By reducing the loss due to the parasitic capacitor component of the transistor, which limits the theoretical efficiency of the linear amplifier, this research has improved the efficiency of the power amplifier. The circuit design simulator was used to design the high efficiency amplifier, and the power output and efficiency characteristics according to the load impedance change have been simulated and verified. In the simulation, 42.1 dBm output and 95% efficiency was designed at DC bias 30 V. The power amplifier was fabricated and showed 91% efficiency at the output of 42.1 dBm (16 W). The transmitting and receiving coils were fabricated for wireless power transfer of the drone, and the maximum power added efficiency was 88% and the output power was $42.1dBm{\pm}1.7dB$ according to the load change causing from the coil intervals.

The design of Fully Differential CMOS Operational Amplifier (Fully Differential CMOS 연산 증폭기 설계)

  • Ahn, In-Soo;Song, Seok-Ho;Choi, Tae-Sup;Yim, Tae-Soo;Sakong, Sug-Chin
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.6
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    • pp.85-96
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    • 2000
  • It is necessary that fully differential operational amplifier circuit should drive an external load in the VLSI design such as SCF(Switched Capacitor Filter), D/A Converter, A/D Converter, Telecommunication Circuit and etc. The conventional CMOS operational amplifier circuit has many problems according to CMOS technique. Firstly, Capacity of large loads are not able to operate well. The problem can be solve to use class AB stages. But large loads are operate a difficult, because an element of existing CMOS has a quadratic functional relation with input and output voltage versus output current. Secondly, Whole circuit of dynamic range decrease, because a range of input and output voltages go down according as increasing of intergration rate drop supply voltage. The problem can be improved by employing fully differential operational amplifier using differential output stage with wide output swing. In this paper, we proposed new current mirror has large output impedance and good current matching with input an output current and compared with characteristics for operational amplifier using cascoded current mirror. To obtain large output swing and low power consumption we suggest a fully differential operational amplifier. The circuit employs an output stage composed new current mirror and two amplifier stage. The proposed circuit is layout and circuit of capability is inspected through simulation program(SPICE3f).

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Design and Simulation of Active Power Filter (전력 능동 필터의 설계 및 시뮬레이션)

  • 정동열;박종연;방선배
    • Proceedings of the IEEK Conference
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    • 2003.07c
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    • pp.2629-2632
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    • 2003
  • This paper presents the harmonics rejection technique and the simulation of a active power filter using power operational amplifier. The proposed active power filter consists of CT(current transformer), harmonics detector and harmonics amplifier. The harmonics detector is a high pass filter using a GIC(Generalized Impedance Converter). The harmonics amplifier consists of a power operational amplifier and passive filters. The simulation has been implemented by OR-CAD program. It is examined whether the proposed active power filter can be realized or not through simple experiments.

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Design of a CMOS Programmable Slew Rate Operational Amplifier with a Switched Parallel Current Subtraction Circuit (병렬전류감산기를 이용한 슬루율 가변 연산증폭기 설계)

  • 신종민;윤광섭
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.32B no.5
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    • pp.730-736
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    • 1995
  • This paper presents the design of a CMOS programmable slew rate operational amplifier based upon a newly proposed concept, that is a switched parallel current subtraction circuit with adaptive biasing technique. By utilizing the newly designed circuit, it was proven that slew rate was linearly controlled and power dissipation was optimized. If the programmable slew rate amplifier is employed into mixed signal system, it can furnish the convenience of timing control and optimized power dissipation. Simulated data showed the slew rate ranging from 5. 83V/$\mu$s to 41.4V/$\mu$s, power dissipation ranging from 1.13mW to 4.1mW, and the other circuit performance parameters were proven to be comparable with those of a conventional operational amplifier.

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Study on the improved efficiency of Microwave linear Power amplifier (마이크로파대용 선형 전력증폭기의 효율개선에 관한 연구)

  • Boo, Jong-Bae;Kim, Kab-Ki
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.11
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    • pp.1934-1939
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    • 2006
  • Current digital communication system is selecting very various digital Modulation way. Need linear power amplifier necessarily to reduce interference for contiguity channel maximum in this communication system and at the same time, power amplifier of high efficiency is required. In this paper Compare with result of equilibrium power amplifier that design Doherty power amplifier of way that linearity and efficiency are improved at the same time through simulation optimization techniques and at the same time design through simulation, efficiency 20% linearity showed 10dB that is improved.

A Design of Low-Power Wideband Bipolar Current Conveyor (CCII) and Its Application to Universal Instrumentation Amplifiers (저전력 광대역 바이폴라 전류 콘베이어(CCII)와 이를 이용한 유니버셜 계측 증폭기의 설계)

    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.5
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    • pp.143-152
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    • 2004
  • A novel low-power wideband bipolar second-generation current conveyors(CCIIs) and its application to universal instrumentation amplifier(UIA) were proposed. The CCII for accuracy voltage or current transfer characteristics and low current input impedance adopted adaptive current bias circuit into conventional class Ab CCII. The UIA consists of only two CCIIs and four resistors. Three instrumentation function of the UIA can be realized by selection of input signals and resistors. The simulation results show that the CCII has input impedance of 2.0$\Omega$ and the voltage gain of 60㏈ for frequency range from 0 to 50KHz when used as a voltage amplifier. The CCII has also good characteristics of current follower for current range from -100㎃ to +100㎃. The simulation results show that the UIA has three instrumentation amplifier functions without resistor matching. The UIA has the voltage gain of 40㏈ for frequency range from 0 to 100KHz when used as a fully-differential instrumentation amplifier. The power dissipations of the CCII and the UIA are 0.75㎽ and 1.5㎽ at supply voltage of $\pm$2.5V, respectively.

Design of Variable Gain Amplifier without Passive Devices (수동 소자를 사용하지 않는 가변 이득 증폭기 설계)

  • Cho, Jong Min;Lim, Shin Il
    • Journal of Korea Society of Industrial Information Systems
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    • v.18 no.5
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    • pp.1-8
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    • 2013
  • This paper presents a variable gain amplifier(VGA) without passive devices. This VGA employes the architecture of current feedback amplifier and variable gain can be achieved by using the GM ratios of two trans-conductance(gm) circuits. To obtain linearity and high gain, it uses current division technique and source degeneration in feedback GM circuits. Input trans-conductance(GM) circuit was biased by using a tunable voltage controller to obtain variable gain. The prototype of the VGA is designed in $0.35{\mu}m$ CMOS technology and it is operating in sub-threshold region for low power consumption. The the gain of proposed VGA is varied from 23dB to 43dB, and current consumption is $2.82{\mu}A{\sim}3{\mu}A$ at 3.3V. The area of VGA is 1$120{\mu}m{\times}100{\mu}m$.

Reliability Characteristics of RF Power Amplifier with MOSFET Degradation (MOSFET의 특성변화에 따른RF 전력증폭기의 신뢰성 특성 분석)

  • Choi, Jin-Ho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.1
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    • pp.83-88
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    • 2007
  • The reliability characteristics of class-E RF power amplifier are studied, based on the degradation of MOSFET electrical characteristics. The class-E power amplifier operates as a switch mode operation to achieve high efficiency. This operation leads to high voltage stress when MOSFET switch is turned-off. The increase in threshold voltage and decrease in nobility caused by high voltage stress leads to a drop in the drain current. In the class-E power amplifier the effects caused by the degradation of MOSFET drain current is a drop of the power efficiency and output power. But the small inductor in the class-E load network allows the reliability to be improved. After $10^{7}\;sec$. the drain current decreases 46.3% and the PAE(Power Added Efficiency) decreases from 58% to 36% when the load inductor is 1mH. But when the load inductor is 1nH the drain current decreases 8.89% and the PAE decreases from 59% to 55%.