• 마이크로전자및패키징학회지
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• 제23권3호
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• pp.69-75
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• 2016

무전해 Ni/전해Cr이중도금 구조에서 무전해 Ni의 결정화 열처리 조건이 Cr도금의 균열성장 및 Ni/Cr계면반응에 미치는 영향을 분석하였다. 비정질 무전해 Ni/전해 Cr 도금 후 $750^{\circ}C$에서 6시간 동안 1회 열처리한 시편을1단계 열처리 조건으로 정했다. 또한, 무전해 Ni도금 후 동일 열처리를 통해 결정화 시킨 후, 전해 Cr도금 후 한번 더 동일조건 열처리한 경우를 2단계 열처리 조건으로 정하여 상호 비교하였다. 두 가지 열처리 조건 모두에서 공통적으로 Ni/Cr계면에서 상호확산에 의한 Ni-Cr고용체band layer가 관찰되었다. 1단계 열처리 조건의 경우 Cr도금에 관통균열이 발생하였으며, 2단계 열처리 조건의 경우 Cr도금에 표면 미소균열만 형성되고 관통균열은 거의 발생하지 않았다. 이는 무전해 Ni도금 직후 열처리에 의해 Ni-P비정질 구조에서 Ni, $Ni_3P$상으로 결정화되면서 급격한 체적 감소가 발생하여 Cr층의 잔류응력 완화에 영향을 끼쳐서, 상부 전해 Cr도금의 관통균열 형성에 영향을 미치는 것으로 판단된다.

• 보존과학회지
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• 제28권4호
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• pp.329-341
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• 2012

마애화령석지장은 해안가에 인접해 있고 해수에 의해 주기적으로 일정 부분이 침수되는 특수한 입지적 조건에 있다. 마애불을 구성하는 암석은 중립질 또는 조립질을 띠는 흑운모화강암으로 내구성이 강한 편이나, 암석 내부에 침투한 염용액과 주변 환경과의 복잡한 상호작용에 의해 구성암석의 색과 강도 및 내구성 등 물성이 변화된 상태이다. 마애불을 이루는 암석은 염(NaCl)결정화 작용에 의한 표면층 박리박락이 심각하다. 박리박락(14.6%)은 해수의 주요 경계면을 중심으로 대기에 상시 노출되는 상부에 집중되어 있다. 반면, 해수에 의해 주기적으로 침수되는 암괴 하부는 오염물이 침착되어 흑화층을 나타내며 이와 함께 갈색변색과 생물오염이 중첩된 상태이다. 표면 오염 및 변질은 흑색 변색(29.2%), 황색 변색(14.1%), 갈색 변색(4.4%), 녹색 변색(2.9%)의 순으로 높은 훼손율(50.5%)을 나타냈다. 또한 해수면을 경계로 상부가 해수에 침수되는 하부보다 초음파 속도가 낮고 편차가 커 많은 물성 변화가 있었음을 알 수 있으며, 특히 해수 침투 경계면의 표면 물성이 취약함을 확인하였다.

• 자원환경지질
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• 제22권1호
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• pp.21-34
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• 1989

Chindong granites are classified into granodiorite, tonalite and quartz-diorite, and Yucheon - Eonyang granites into monzo-granite by the Streckeisen diagram. These granitic rocks of Cretaceous age show trend of calc-alkaline magma, and the magmatic evolution from basic to acidic rocks is consistant with the general crystallization path of the Cretaceous granitic rocks in the Gyeongsang basin. On the basis of petrological and petrochemical data, variation of major elements (K, Na, Ca, Mg) and trace elements (Rb, Sr, Ba) including ore metals (Cu, Pb, Zn) in the Cretaceous granitic rocks were studied in detail in order to investigate geochemical difference of the granitic rocks in relation to mineralization between Cu province and Pb-Zn province in the Gyeongsang basin. There is clear difference in content of the major elements between Chindong granites and Yucheon-Eonyang granites : Chindong granites have low content of K (1.62%) and Na (2.53%), and high content of Ca (3.75%) and Mg (1.42%) whereas Yucheon-Eonyang granites have high content of K (3.56-3.60%), and low content of Ca (0.96-0.26%) and Mg (0.26-0.21%). There is also clear difference in content of trace lithophile elements between Chindong granites and Yucheon-Eonyang, granites : Chindong granites have low content of Rb (86ppm) and Ba (330ppm), and high content of Sr (405ppm) while Yucheon-Eonyang, granites have high content of Rb (144-161ppm) and Ba (983-1030ppm), and low content of Sr (157-136ppm). The lithophile trace elements of Rb and Sr vary with close relationship to major elements of K and Ca, respectively. Therefore, Chindong granites are much easily distinguished from Yucheon-Eonyang granites by using relationship of K with Rb and Ca with Sr : K<3%, Rb<100ppm, Ca<2% and Sr>200ppm for Chindong granites, and K>3%, Rb>100ppm, Ca<2%, and Sr<200ppm for Yucheon-Eonyang granites. There is not clear difference in content of trace ore metals between Chindong granites and Yucheon-Eonyang granites : Chindong granites of the Cu province have low Cu content (15ppm) which is nearly equal to 13-14ppm of Yucheon-Eonyang granites of the Pb-Zn province, and Yucheon-Eonyang granites have Pb content (29-27ppm) which is rather lower than 37ppm of Chindong granites. But Cu is anomalously high in the mineralized part of Chindong granites in Gunbuk-Haman area, and Zn is apparently higher in Yucheon-Eonyang granites (51-37ppm) than in Chindong granites (29ppm). K/Pb ratio is also c1early distinguishable between Chindong granites (<850) and Yucheon-Eonyang granites (>850). Thus, it may be possible to apply geochemical difference of the granites to distinguish whether a Cretaceous granitic body is Cu related rock or Pb-Zn related rock, and whether it belongs to Cu province or Pb-Zn province in the Gyeongsang basin.

• 자원환경지질
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• 제31권3호
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• pp.249-264
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• 1998

The Creataceous volcanic rocks distributed in the southeastern part (Kyeongsang basin) of Korea peninsula are composed of basalt, basaltic andesite, andesite, dacite and rhyolite. The variation of major elements show that contents of MgO, CaO, $FeO^T$, $Al_2O_3$, $TiO_2$ and $P_2O_5$ decrease with increasing of $SiO_2$, but $K_2O$ contents are increased slightly, $Na_2O$ widely dispersed. We can show slightly inflection point and low frequency of dacites in range between 63-65 wt.% $SiO_2$, while continuous trend exit in variation diagram. Variation trends in Harker diagrams for the major, minor, trace and REEs suggest that the BAV (basaltic to andesitic volcanics) and DRV (dacitic to rhyolitic volcanics) are not related to a simple crystal fractionation process. In the regime of under 65 wt. % in silica content, fractionation of olivine and clinopyroxene is predominant, while that of plagioclase happens strongly higher than 65 wt.% (e.g., $SiO_2$, vs. Eu and Sr, MgO vs. $Al_2O_3$ and CaO). The latter means low-pressure fractional crystallization for DRV. On the discriminant diagram, DRV are located in more mature environment than BAV. The $(Ce/Sm)_N$ vs. CeN digram shows that these two classes cannot be related to crystal fractionation. If they had been produced by fractionation, although they plotted in a slightly elongate cluster along the same horizontal trend, DRV should lie to the right of these primitive compositions. These diagrams clearly rule out a simple fractionation throughout from BAV to DRV. BAV had been influenced greatly subductiong slab as shown by K/Yb vs. Ta/Yb. We suggest that BAV primitive magma generated higher degree of partial melting than DRV primitive magma. LILE (K, Ba, $Rb{\pm}Th$) enriched characteristics as shown in BAV are inherited from subducting slab fluids and/or higher degree of partial melting of mantle material. However, lower degree of partial melting of mantle relative to BA V and contamination at high-level magma reservoir caused LILE enrichment to DRV.

• 자원환경지질
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• 제25권2호
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• pp.133-143
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• 1992

Ulsan granite is plotted mainly in the region of syeno-granite of the Streckeisen diagram, which consists with those of iron related granites in the area of Kimhae-Mulgum, while Chindong granites and Yucheon-Eonyang granites are plotted in the regions of granodiorite-diorite and monzo-granite, respectively. These granites show a differentiation trend of calc-alkaline magma, and their magmatic evolution from intermediate to acidic rocks is consistant with the general crystallization path of the Cretaceous granitic rocks in the Gyeongsang basin. The difference index (D.I.) is 70~90 for Ulsan granite, which lies between 35~80 of Chindong granites and 85~95 of Yucheon-Eonyang granites. These granites are distinguishable from each other by variation patterns of chemical elements. For instance, there is clear difference in content of some major and trace elements between Ulsan granite and Cu-related Chindong granites: Ulsan granite has high content of K (2.68%) and Ba (636 ppm), and low content of Ca (1.07%), Mg (0.50%) and Sr (185 ppm), whereas Chindong granites has less content of K (1.62%) and Ba (382 ppm), and higher content of Ca (3.75%), Mg (1.42%) and Sr (405 ppm). However, the content of Ulsan granite overlaps partly those of Yucheon-Eonyang granites, which are apparently dividable from Chindong granites. There is an usual trend that Cu content is high in Chindong granites of Cu province and Zn content is higher in Yucheon-Eonyang granites of Pb-Zn province. But it is unusual that Cu and Zn are higher in Ulsan granite (34 ppm, 74 ppm) than in Chindong granites (15 ppm, 22 ppm) and Yucheon-Eonyang granites (14 ppm, 43 ppm). This may be due to the reason that Ulsan granite is productive and Cu-Zn minerals are associated with iron ores. Productive Chindong granites in Haman-Gunbug area and Yuchon-Eonyang granites near ore deposits have higher content of Cu and Zn than Ulsang granite. Therefore, it is expected that chemical variation patterns of granites are applicable to distinguish mineral commodity of ore deposits (iron, copper, or lead-zinc) related with the granites in the Gyeongsasng basin.

• Applied Biological Chemistry
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• 제22권4호
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• pp.191-197
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• 1979

Km값 및 분광학적성질(分光學的性質)를 조사하고 아울러 이 효소(酵素)의 결정화법(結晶化法)을 검토하여 다음과 같은 결과를 얻었다. 1. 효소(酵素)의 정제(精製)과정에서 유안분별침전(硫安分別沈澱)을 한 조효소(粗酵素)를 pH6.0 및 7.0의 인산염(燐酸鹽)완충액으로 48시간 이상의 충분한 투석(透析)을 시키고 DEAE-Sephadex column chromatography에서는 11mg protein/ml DEAE-Sephadex 정도의 DEAE-Sephadex를 사용하는 것이 효과적이였다. 2. 효소(酵素)의 정제과정(精製過程)에서 이미 알려진 protamin 황산(黃酸) 처리와 Sephadex G-150의 gel여과는 생략하여도 무방하였다. 3. 효소(酵素)의 결정화(結晶化)에서는 단백질을 20mg/ml의 농도가 되게끔 2-mercaptoethanol를 함유하는 0.01M 인산(燐酸)카리 완충액에 녹여 고체유안(固體硫安) 첨가(添加)법으로 결정(結晶)시키는 것이 가장 큰 육각봉상(六角棒狀)의 결정(結晶)이 얻어졌다. 4. Pyridoxal phosphate와 결합(結合)한 holo형 ${\beta}-tyrosinase$는 340nm와 430nm의 파장(波長)에서 각각 최대흡수(最大吸收)를 나타내었다. 5. ${\beta}-tyrosinase$의 L-tyrosine에 대한 Km값은 $2.31{\times}10^{-4}M$이였으며 SDS-polyacrylamide 전기영동법(電氣泳動法)에 의한 이 효소(酵素)의 subunit의 분자량(分子量)은 약 5,000이였다.

• 한국정보통신학회논문지
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• 제17권5호
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• pp.1213-1218
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• 2013

본 연구에서는 고주파 마그네트론 스퍼터링법으로 기판온도 변화에 따른 GZO 박막을 투명 사파이어 기판위에 제작하여, 박막의 전기적 광학적 특성 및 결정화 특성을 조사하였다. 전기적 특성을 조사한 결과, 기판온도 $300^{\circ}C$에서 가장 낮은 $4.18{\times}10^{-4}{\Omega}cm$의 비저항을 나타내었고, 이때의 캐리어 농도는 $6.77{\times}10^{20}cm^{-3}$, 홀 이동도는 $22cm^2/Vs$를 나타내었다. 또한 이 조건에서 가장 큰 c-축 배향성을 얻을 수 있었고, 그 때의 반가폭은 $0.34^{\circ}$이었다. AFM 표면형상에서도 기판온도 $300^{\circ}C$에서 가장 우수한 결정성을 확인하였다. 모든 GZO 박막은 기판온도와 무관하게 가시광 영역에서 80 % 정도의 투과율을 보였고, 광학적 밴드갭은 기판온도가 $300^{\circ}C$ 까지 증가함에 따라 3.52 eV 로 증가하여 blue-shift 의 경향이 관찰되었으며, 벌크 ZnO 의 밴드갭인 3.3 eV 보다 높은 것을 확인하였다. 이는 기판온도 증가에 따른 캐리어 농도의 증가로 에너지 밴드갭이 확장된다는 Burstein-Moss 효과로 설명될 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• 한국진공학회지
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• 제9권3호
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• pp.258-262
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• 2000

$YMnO_3$박막은 고주파 스퍼터를 사용하여 Si(100)과 $Y_2O_3$/si(100)기판에 증착하였다. 증착시에 산소 분압의 조건과 열처리 온도는 YMnO$_3$ 박막의 결정성과 그 메모리 윈도우의 특성에 매우 중요한 영향을 주었다. XRD 측정 결과 산소 분압 0%에서 증착후 $870^{\circ}C$에서 1시간 동안 후열처리한 $YMnO_3$ 박막은 c-축을 따라 매우 잘 배향되었음을 확인하였다. 반면 산소분압 20%에서 Si(100)과 $Y_2O_3$/Si(100) 기판위에 증착된 $YMnO_3$박막의 결정화는 XRD측정 결과 $Y_2$O$_3$ peak가 보이는 것으로 보아 YMnO$_3$박막내에 과잉의 $Y_2O_3$가 c-축으로의 배향을 억제하는 것을 알 수 있다. 특히 산소분압 0%에서 증착한 Pt/$YMnO_3/Y_2O_3$/Si 구조에서의 메모리 윈도우 특성은 c-축으로 잘 배향된 결과로 인해 인가전압 2~12V에서 0.67-3.65V이었으며 이는 $Y_2O_3$/si 기판위에 산소분압 20%에서 증착한 박막 (0.19~1.21V)보다 동일한 인가전압에서 3배 정도의 큰 메모리 윈도우 특성을 보였다.