• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.80-83
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• 2000

In this work we deposited Pentacene thin film by OMBD at the various substrate temperatures, deposition rate and the various annealing temperatures for the fabrication of organic TFT and investigated the electrical and film surface characteristics such as sheet resistance, contact resistance and conductance Film thickness were measured by $\alpha$-step and the sheet resistance, contact resistance and conductance were extracted from the relation between the distance of the contacts and the resistance. During the film deposition the substrate temperature was held at 3$0^{\circ}C$, 4$0^{\circ}C$, 5$0^{\circ}C$, 6$0^{\circ}C$, 8$0^{\circ}C$ and 10$0^{\circ}C$, respectively. After the film deposition, Au contact was deposited by thermal evaporation. For the effect of annealing, the thin film was annealed in the nitrogen environment at 10$0^{\circ}C$ and 14$0^{\circ}C$ for 10 seconds, respectively. Film surface characteristics at the vatious substrate temperatures were measured by AFM. The crystallization of thin film was improved as the substrate temperatures were increased and the maximum gram size was 4${\mu}{\textrm}{m}$. The conductivity of thin film was found to be 7.40 $\times$10$^{-7}$ ~ 7.78$\times$10$^{-6}$ S/cm and the minimum contact resistance was 2.5324 ㏁.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.601-608
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• 2014

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.

• Composites Research
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• v.30 no.2
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• pp.77-83
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• 2017

Liquid silicon infiltration, which is one of the methods of producing fiber reinforced ceramic composites, has several advantages such as low fabrication cost and good shape formability. In order to confirm LSI process feasibility of SiC fiber, $SiC_f/SiC$ composites were fabricated using three types of SiC fibers (Tyranno SA, LoxM, Tyranno S) which have different crystallinity and oxygen content. Composites that were fabricated with LSI process were well densified by less than 2% of porosity, but showed an obvious difference in 3-point bending strength according to crystallinity and oxygen content. When composites in LSI process was exposed to a high temperature, crystallization and micro structural changes were occurred in amorphous SiOC phase in SiC fiber. Fiber shrinkage also observed during LSI process that caused from reaction in fiber and between fiber and matrix. These were confirmed with changes of process temperature by SEM, XRD and TEM analysis.

• Korean Chemical Engineering Research
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• v.52 no.6
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• pp.768-774
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• 2014

SI process is a thermochemical process producing hydrogen by decomposing water while recycling sulfur and iodine. Various technologies have been developed to improve the efficiency on Section III of SI process, where iodine is separated and recycled. EED(electro-electrodialysis) could increase the efficiency of Section III without additional chemical compounds but a substantial amount of $I_2$ from a process stream is loaded on EED. In order to reduce the load, a crystallization technology prior to EED is considered as an $I_2$ removal process. In this work, $I_2$ particle sinking behavior was modeled to secure basic data for designing an $I_2$ crystallizer applied to $I_2$-saturated $HI_x$ solutions. The composition of $HI_x$ solution was determined by thermodynamic UVa model and correlation equations and pure properties were used to evaluate the solution properties. A multiphysics computational tool was utilized to calculate particle sinking velocity changes with respect to $I_2$ particle radius and temperature. The terminal velocity of an $I_2$ particle was estimated around 0.5 m/s under considered radius (1.0 to 2.5 mm) and temperature (10 to $50^{\circ}C$) ranges and it was analyzed that the velocity is more dependent on the solution density than the solution viscosity.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.6
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• pp.670-675
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• 2016

Both melting temperature and enthalpy of MBCA/DMTDA mixtures were measured as a function of DMTDA compositions using DSC. The thermal properties of polyurethane elastomer samples prepared with MBCA, DMTDA, and 40/60 MBCA/DMTDA mixture as curing agents were also observed using TGA. MBCA and DMTDA showed good miscibility over the entire composition range, exhibiting individual DSC melting peaks. Peak temperatures were non-linearly reduced as DMTDA concentrations increased, being approximately $60^{\circ}C$ in the case of the 40/60 MBCA/DMTDA mixture. Furthermore, melting enthalpy of the mixture was calculated as 3.8 J/g, which was only 4.3% compared to 87.3 J/g of MBCA. Based on these results, crystallization of the mixture was considered to occur very slowly, and the fluidic gel-state of the mixture was visually confirmed to be maintained over 5 days at room temperature. Thermal decomposition of polyurethane elastomer prepared with 40/60 MBCA/DMTDA curative started at about $190^{\circ}C$, which is similar to that observed for DMTDA, only except decomposition behavior over higher temperature of $400^{\circ}C$.

• Applied Chemistry for Engineering
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• v.4 no.4
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• pp.721-730
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• 1993

Various catalysts of $Cu_xH_3-{_{2x}}PMo_{12}O_{40}{\cdot}_nH_2O$ with different x-values have been prepared and characterized by thermal analysis, X-ray powder diffraction, infrared spectroscopy, BET surface-area measurement, electron microscopy, and temperature programmed desorption of ammonia. The properties of these catalysts in acrolein oxidation have been investigated in a continuous-flow fixed-bed reactor. The catalysts lost their water of crystallization at about $200^{\circ}C$ and their constitutional water between 300 and $400^{\circ}C$. The Keggin structure of the catalysts was identified by infrared spectroscopy. The decomposition of Keggin anion, $(PMo_{12}O_{40})^{3-}$, was increased with the increase of substituted copper content and identifiable $MoO_3$ and $P_2O_5$ as decomposition products were observed. The conversion of acrolein decreased with the increase of x probably due to the decrease of specific surface area and of total amount of acid sites. But specific reaction rate and selectivity to acrylic acid were maximized at x=1.0, and it showed specific acid site distributions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.41 no.spc1
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• pp.110-122
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• 1996

The n-3 family fatty acids containing ${\alpha}$-linolenic acid(18:3, ALA) have been known as physiological activation materials such as inhibitory effects on the incidence of hyper-tension, coronary heart disease and cancers as well as the control of senilc dementia. Although a lot of ALA(about $63\%$) are contained in perilla oil, it has not been commercialized yet because the purification technique of the ALA has not been well established. The procedure of purification of ALA from perilla oil was saponified with 1 N-KOH /ethanol and then saturated and low level unsaturated fatty acids were removed by low-temperature crystallization method. The concentrated unsaturated fatty acids (containing about $75\%$ ALA) went down through the silver nitrate-impregnated silica column chromatography for separation of high purity of ALA. The results obtained we Fraction B, C and D contained ALA more than $85.5\%$(recovery, >$88.9\%,\;95.4\%$(recovery, >$54.4\%$) and $99.9\%$(recovery, >$31.5\%$) in purity, respectively. Seed oil content of the tested varieties were ranged from 34.8 to $54.1\%$ with $45.3\%$ of varietal means. The major omega fatty acids contained in the oil were oleic acid(n-9) $15.2\%$, linoleic acid(n-6) $13.9\%$ and linolenic acid(n-3) $63.1\%$ in the mean value. Varietal variation of n-9, 6 and 3 fatty acids ranged of $9.5\~21.4\%,\;9.1\~20.4\%$ and $50.6\~70.5\%$ respectively. Unsaturated fatty acid were averaged $92.2\%$ of seed oil in fatty acid composition. The ratios of n-6 to n-3 ranged of $0.13\~0.34\%$($0.22\%$ in mean value). The highest n-3 fatty acid variety was Yecheonjong being $70.5\%$. The lowest variety in ratios of n-6 to n-3 was Goseongjong being $0.13\%$. Oil content showed positive correlation with stearic acid and linolenic acid, while the negative correlation with oil content and linoleic acid. On the other hand, A significant negative correlation were showed between linolnic acid and the ratios n-6/n-3 fatty acid, saturated fatty acid. Saturated fatty acid was highly correlated with unsaturated fatty acid negatively being $r= -0.723^{**}$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.2 s.344
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• pp.8-12
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• 2006

We have fabricated ZnO thin film on $Pt/TiO-2/SiO_2/Si$ substrate by the sol-gel method and have investigated the effect of annealing temperature on the structural morphology and optical properties of ZnO thin films. The ZnO thin film annealed at $600^{\circ}C$ exhibits the highest c-axis orientation and its FWHM of X-ray peak is $0.4360^{\circ}C$. In the results of surface morphology investigation of ZnO thin film by using Am it is observed that ZnO thin film annealed at $600^{\circ}C$ exhibits the largest UV (ultraviolet) exciton emission at around 378nm and the smallest visible emission at around 510nm among these of ZnO thin films annealed at various temperatures. It is deduced that the ZnO thim film annealed at $600^{\circ}C$ is formed most stoichiometrically since the visible emission at around 510nm comes from oxygen vacancy or impurities.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.70-74
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• 2009

Effect of the processing variables on the formation of $Pb(Sc_{1/2}Nb_{1/2})O_3$(hereafter PSN) thin layers prepared on Pt(111)/Ti/$SiO_2$/Si substrates using the sol-gel and the spin coating method has been studied. After each deposition, the coated films were heated at $370^{\circ}C$ for 5 min. Then they were finally sintered at temperature range of $600{\sim}700^{\circ}C$ by RTA(rapid thermal annealing). The final multilayered films showed a (111) preferred orientation. On a while, the layer-by-layer crystallization of multilayered amorphous thin films without the intermediate heating exhibited a (100) preferred orientation. In case of heat treatment in the tube furnace with the heating rate of $4^{\circ}C/min$, (100) and (111) oriented thin layers were formed simultaneously. The microstructure of the deposited films were dense and crack-free with thickness of 300nm, irrespective of the processing variables.