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The Crystallization and the Photoluminescence Characteristics of ZnO Thin Film Fabricated by Sol-gel Method  

Choi Byeong Kyun (Dept. of Electronics Engineering, Inha University)
Chang Dong Hoon (Dept. of Electronics Engineering, Inha University)
Kang Seong Jun (Dept. of Semiconductor Materials & Devices, Yosu National University)
Yoon Yung Sup (Dept. of Electronics Engineering, Inha University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.43, no.2, 2006 , pp. 8-12 More about this Journal
Abstract
We have fabricated ZnO thin film on $Pt/TiO-2/SiO_2/Si$ substrate by the sol-gel method and have investigated the effect of annealing temperature on the structural morphology and optical properties of ZnO thin films. The ZnO thin film annealed at $600^{\circ}C$ exhibits the highest c-axis orientation and its FWHM of X-ray peak is $0.4360^{\circ}C$. In the results of surface morphology investigation of ZnO thin film by using Am it is observed that ZnO thin film annealed at $600^{\circ}C$ exhibits the largest UV (ultraviolet) exciton emission at around 378nm and the smallest visible emission at around 510nm among these of ZnO thin films annealed at various temperatures. It is deduced that the ZnO thim film annealed at $600^{\circ}C$ is formed most stoichiometrically since the visible emission at around 510nm comes from oxygen vacancy or impurities.
Keywords
PL(photoluminescence); Sol-gel process; ZnO thin film; Annealing temperature;
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