• 제목/요약/키워드: crystallization

검색결과 2,445건 처리시간 0.028초

Fe-Si-B-Ni 비정질 합금의 어닐링에 관한 연구 (A Study on Annealing of Fe-Si-B-Ni Amorphous Alloy)

  • 김신우;송용설;백무흠
    • 한국재료학회지
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    • 제13권11호
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    • pp.721-724
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    • 2003
  • A Fe-Si-B-Ni amorphous alloy manufactured by one roll melt-spinning method showed the crystallization temperature difference of a maximum $10^{\circ}C$ according to each lot. This temperature difference had a considerable influence on the annealing process to be conducted for obtaining the proper inductance of the alloy. The proper annealing temperature of the alloy was $480^{\circ}C$ and the annealing time increased as the crystallization temperature increased. The activation energy measured by Kissinger method increased as the crystallization temperature increased. Therefore, the annealing process must be adjusted by the crystallization temperature difference of the amorphous alloy.

Ion Beam Assisted Crystallization Behavior of Sol-Gel Derived $PbTiO_3$ Thin Films

  • Oh, Young-Jei;Oh, Tae-Sung;Jung, Hyung-Jin
    • The Korean Journal of Ceramics
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    • 제2권1호
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    • pp.48-53
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    • 1996
  • Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

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비정질 실리콘의 ELC 공정에 대한 광학적 연구 (An Optical Study on ELC Process of Amorphous Silicon)

  • 김우진;윤창환;박승호;김형준
    • 한국레이저가공학회지
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    • 제6권2호
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    • pp.9-17
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    • 2003
  • Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received an increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM photography. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

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이중 금속 측면 결정화를 이용한 40$0^{\circ}C$ 다결정 실리콘 박막 트랜지서터 제작 및 그 특성에 관한 연구 (Fabrication and Characteristics of poly-Si thin film transistors by double-metal induced lteral crystallization at 40$0^{\circ}C$)

  • 이병일;정원철;김광호;안평수;신진욱;조승기
    • 전자공학회논문지D
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    • 제34D권4호
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    • pp.33-39
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    • 1997
  • The crystallization temperature of an amorphous silicon (a-Si) can be lowered down to 400.deg. C by a new method : Double-metal induced lateral crystallization (DMILC). The a-Si film was laterally crystallized from Ni and Pd deposited area, and its lateral crystallization rate reaches up to 0.2.mu.m/hour at that temperature and depends on the overlap length of Ni and Pd films; the shorter the overlap length, the faster the rate. Poly-Silicon thin film transistors (poly-Si TFT's) fabricated by DMILC at 400.deg. C show a field effect mobility of 38.5cm$^{3}$/Vs, a minimum leakage current of 1pA/.mu.m, and a slope of 1.4V/dec. The overlap length does not affect the characteristics of the poly-Si TFT's, but determines the lateral crystallization rate.

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Crystallization and Molecular Relaxation of Poly(Ethylene Terephthalate) Annealed in Supercritical Carbon Dioxide

  • Jung, Yong-Chae;Cho, Jae-Whan
    • Fibers and Polymers
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    • 제6권4호
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    • pp.284-288
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    • 2005
  • Poly(ethylene terephthalate) was annealed at different temperature and pressure of supercritical carbon dioxide $(CO_2)$ using samples quenched from the melt. Crystallization and molecular relaxation behavior due to $CO_2-annealing$ of samples were investigated using differential scanning calorimetric and dynamic mechanical measurements. The glass transition and crystallization temperatures significantly decreased with increasing temperature and pressure of $CO_2$. The dynamic mechanical measurement of samples annealed at $150^{\circ}C$ in supercritical $CO_2$ showed three relaxation peaks, corresponding to existence of different amorphous regimes such as rigid, intermediate, and mobile domains. As a result, the mobile chains were likely to facilitate crystallization in supercritical state. It also led to the decreased modulus of $CO_2-annealed$ samples with increasing pressure.

Application of hybrid LRR technique to protein crystallization

  • Jin, Mi-Sun;Lee, Jie-Oh
    • BMB Reports
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    • 제41권5호
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    • pp.353-357
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    • 2008
  • LRR family proteins play important roles in a variety of physiological processes. To facilitate their production and crystallization, we have invented a novel method termed "Hybrid LRR Technique". Using this technique, the first crystal structures of three TLR family proteins could be determined. In this review, design principles and application of the technique to protein crystallization will be summarized. For crystallization of TLRs, hagfish VLR receptors were chosen as the fusion partners and the TLR and the VLR fragments were fused at the conserved LxxLxLxxN motif to minimize local structural incompatibility. TLR-VLR hybridization did not disturb structures and functions of the target TLR proteins. The Hybrid LRR Technique is a general technique that can be applied to structural studies of other LRR proteins. It may also have broader application in biochemical and medical application of LRR proteins by modifying them without compromising their structural integrity.

비정질 $PbTiO_3$ 박막의 결정화에 관한 연구 (Crystallization of Amorphours $PbTiO_3$ Thin Film)

  • 강영민;김상섭;백성기
    • 한국세라믹학회지
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    • 제30권5호
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    • pp.389-396
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    • 1993
  • We studied the crystallization behavior of amorphous PbTiO3 thin film grown at 30$0^{\circ}C$ by RF magnetron sputtering on Pt substrate. Crystallization to full perovskite phase was observed after annealing at 475$^{\circ}C$, for 9min, without PbO volatilization. The higher the annealing temperature, the shorter the time required for crystallization. The isothermal kinetic study at 475$^{\circ}C$ showed that the Avrami constant was approximately 4, which implies that the crystallization can be characterized by isotropic 3-dimensional growth with a constant nucleation rate. The TEM study revealed that the crystallized thin film was composed of very fine (20~100nm) grains oriented randomly without any evidence of 90$^{\circ}$domain boundaries.

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인공치관용(人工齒冠用) Glass-Ceramics의 결정화(結晶化)에 관(關)한 연구(硏究) (A Study on the Crystallization of Glass-Ceramics for Dental Crown)

  • 정인성
    • 대한치과기공학회지
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    • 제14권1호
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    • pp.95-118
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    • 1992
  • Glass ceramics for crown were prepared by adding 3$\sim$11 wt% TiO2 to the weight percent composition of 34.7 CaO, 27.8 SiO2, 18.3P2O5, 12.6MgO and 6.6 TiO2. The starting glasses were prepared by melting the powdered batch in alumina crucible at 1350$\sim$1400 for 1 hr and then quenching into a distilled water. The nucleation and crystallization of the crystalline glass ceramics for crown were studied by DTA, SME and X-ray diffraction analysis. Frit containing 9.11 wt% TiO2 had crystallization temperature of 850$\sim$1075 and major crystalline phase was identified by X-ray diffraction as diopside(CaO-MgO-2SiO2). Activation energies for the crystallization processes were obtained from DTA by varing rates for the fits, and were calculated from modified Ozawa and Kissinger equations. Activation energy for the crystallization processes of the S-4 frit was 489.6 KJ/mol.

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Al과 Ni를 이용한 비정질 실리콘의 결정화 거동 (Crystallization behavior of Amorphous Silicon with Al and Ni)

  • 권순규;최균;김병익;황진하
    • 한국세라믹학회지
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    • 제43권4호
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    • pp.230-234
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    • 2006
  • Metal-Induced Crystallization (MIC) of amorphous silicon (a-Si) using aluminum and nickel as catalysts were performed with a variation of metal thickness and temperature. Raman results showed that the crystallization of a-Si depended on the thickness of aluminum while not on nickel. Nickel that forms silicide nodules during annealing simply catalyzed the formation of crystalline silicon (c-Si) while aluminum was consumed and transferred during MIC, which resulted in more complex microstructural characteristics. Crystalline silicons after NIC had elongated shape with a twin along the long axis. Morphological change after Aluminum-Induced Crystallization (AIC) showed more equiaxial grains. The nucleation and growth mechanism of AIC was discussed.

Competition between Phase Separation and Crystallization in a PCL/PEG Polymer Blend Captured by Synchronized SAXS, WAXS, and DSC

  • Chuang Wei-Tsung;Jeng U-Ser;Sheu Hwo-Shuenn;Hong Po-Da
    • Macromolecular Research
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    • 제14권1호
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    • pp.45-51
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    • 2006
  • We conducted simultaneous, small-angle, X-ray scattering/differential scanning calorimetry (SAXS/DSC) and simultaneous, wide-angle, X-ray scattering (WAXS)/DSC measurements for a polymer blend of poly($\varepsilon$-caprolactone)/poly(ethylene glycol)(PCL/PEG). The time-dependent SAXS/DSC and WAXS/DSC results, measured while the system was quenched below the melting temperature of PCL from a melting state, revealed the competitive behavior between liquid-liquid phase separation and crystallization in the polymer blend. The time-dependent structural evolution extracted from the SAXS/WAXS/DSC results can be characterized by the following four stages in the PCL crystallization process: the induction (I), nucleation (II), growth (III), and late (IV) stages. The influence of the liquid-liquid phase separation on the crystallization of PCL was also observed by phase-contrast microscope and polarized microscope with 1/4$\lambda$ compensator.