The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
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Ion Beam Assisted Crystallization Behavior of Sol-Gel Derived $PbTiO_3$ Thin Films

  • Oh, Young-Jei (Division of Ceramices, Korea Institute of Science and Technology) ;
  • Oh, Tae-Sung (Dept. of Metallurgy and materials Science, Hong Ik University) ;
  • Jung, Hyung-Jin (Division of Ceramics, Korea Institute of Science and Technology)
  • Published : 1996.03.01
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Abstract

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

Keywords

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