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http://dx.doi.org/10.4191/KCERS.2006.43.4.230

Crystallization behavior of Amorphous Silicon with Al and Ni  

Kwon, Soon-Gyu (Korea Institute of Ceramic Engineering and Technology)
Choi, Kyoon (Korea Institute of Ceramic Engineering and Technology)
Kim, Byung-Ik (Korea Institute of Ceramic Engineering and Technology)
Hwang, Jin-Ha (Department of Material Science and Engineering, Hongik University)
Publication Information
Journal of the Korean Ceramic Society / v.43, no.4, 2006 , pp. 230-234 More about this Journal
Abstract
Metal-Induced Crystallization (MIC) of amorphous silicon (a-Si) using aluminum and nickel as catalysts were performed with a variation of metal thickness and temperature. Raman results showed that the crystallization of a-Si depended on the thickness of aluminum while not on nickel. Nickel that forms silicide nodules during annealing simply catalyzed the formation of crystalline silicon (c-Si) while aluminum was consumed and transferred during MIC, which resulted in more complex microstructural characteristics. Crystalline silicons after NIC had elongated shape with a twin along the long axis. Morphological change after Aluminum-Induced Crystallization (AIC) showed more equiaxial grains. The nucleation and growth mechanism of AIC was discussed.
Keywords
MIC; AIC; Metal-induced; Crystallization;
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