• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.69-75
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• 2016

This study investigated the effect of heat treatment conditions not only on the Cr surface crack propagation behaviors but also on the Ni/Cr interfacial reaction characteristics in electroless Ni/electroplated Cr double coating layers on Cu substrate. Clear band layer of Ni-Cr solid solutions were developed at Ni/Cr interface after heat treatment at $750^{\circ}C$ for 6 h. Channeling cracks formed in Cr layer after 1 step heat treatment, that is, heat treatment after Ni/Cr plating, while little channeling cracks formed after 2 step heat treatment, that is, same heat treatments after Ni and Cr plating, respectively, due to residual stress relaxation due to crystallization of Ni layer before Cr plating.

• Journal of Conservation Science
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• v.28 no.4
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• pp.329-341
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• 2012

Magai Wareiishi Jizo (Buddhist statue carved on rock surface) is close to shoreline and a part of rock block is periodically immersed by seawater. Rock material of the Wareiishi-jizo statue is composed mainly of medium or coarse-grained biotite granite and very durable. However, physical properties of the rock have been changed according to the complex interactions of the salt solution and surrounding environment. Exfoliation of the rock surface is a serious condition by salt crystallization. Exfoliation (14.6%) is concentrated on the upper part of the rock block with mainly boundary of seawater as the center. On the other hand, lower part of the rock block show black layers by contaminants deposition. In addition, brown discoloration and biological contaminants is overlapped. Rock surface show high discoloration rate of 50.5% (black discoloration, 29.2% > yellow discoloration, 14.1% > brown discoloration, 4.4% > green discoloration, 2.9%). Upper part of the rock block had a lot of change in the physical properties than lower part that is immersed by seawater. In particular, surface properties of the rock block was very weak state at the boundary surface of seawater permeation.

• Economic and Environmental Geology
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• v.22 no.1
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• pp.21-34
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• 1989

Chindong granites are classified into granodiorite, tonalite and quartz-diorite, and Yucheon - Eonyang granites into monzo-granite by the Streckeisen diagram. These granitic rocks of Cretaceous age show trend of calc-alkaline magma, and the magmatic evolution from basic to acidic rocks is consistant with the general crystallization path of the Cretaceous granitic rocks in the Gyeongsang basin. On the basis of petrological and petrochemical data, variation of major elements (K, Na, Ca, Mg) and trace elements (Rb, Sr, Ba) including ore metals (Cu, Pb, Zn) in the Cretaceous granitic rocks were studied in detail in order to investigate geochemical difference of the granitic rocks in relation to mineralization between Cu province and Pb-Zn province in the Gyeongsang basin. There is clear difference in content of the major elements between Chindong granites and Yucheon-Eonyang granites : Chindong granites have low content of K (1.62%) and Na (2.53%), and high content of Ca (3.75%) and Mg (1.42%) whereas Yucheon-Eonyang granites have high content of K (3.56-3.60%), and low content of Ca (0.96-0.26%) and Mg (0.26-0.21%). There is also clear difference in content of trace lithophile elements between Chindong granites and Yucheon-Eonyang, granites : Chindong granites have low content of Rb (86ppm) and Ba (330ppm), and high content of Sr (405ppm) while Yucheon-Eonyang, granites have high content of Rb (144-161ppm) and Ba (983-1030ppm), and low content of Sr (157-136ppm). The lithophile trace elements of Rb and Sr vary with close relationship to major elements of K and Ca, respectively. Therefore, Chindong granites are much easily distinguished from Yucheon-Eonyang granites by using relationship of K with Rb and Ca with Sr : K<3%, Rb<100ppm, Ca<2% and Sr>200ppm for Chindong granites, and K>3%, Rb>100ppm, Ca<2%, and Sr<200ppm for Yucheon-Eonyang granites. There is not clear difference in content of trace ore metals between Chindong granites and Yucheon-Eonyang granites : Chindong granites of the Cu province have low Cu content (15ppm) which is nearly equal to 13-14ppm of Yucheon-Eonyang granites of the Pb-Zn province, and Yucheon-Eonyang granites have Pb content (29-27ppm) which is rather lower than 37ppm of Chindong granites. But Cu is anomalously high in the mineralized part of Chindong granites in Gunbuk-Haman area, and Zn is apparently higher in Yucheon-Eonyang granites (51-37ppm) than in Chindong granites (29ppm). K/Pb ratio is also c1early distinguishable between Chindong granites (<850) and Yucheon-Eonyang granites (>850). Thus, it may be possible to apply geochemical difference of the granites to distinguish whether a Cretaceous granitic body is Cu related rock or Pb-Zn related rock, and whether it belongs to Cu province or Pb-Zn province in the Gyeongsang basin.

• Economic and Environmental Geology
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• v.31 no.3
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• pp.249-264
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• 1998

The Creataceous volcanic rocks distributed in the southeastern part (Kyeongsang basin) of Korea peninsula are composed of basalt, basaltic andesite, andesite, dacite and rhyolite. The variation of major elements show that contents of MgO, CaO, $FeO^T$, $Al_2O_3$, $TiO_2$ and $P_2O_5$ decrease with increasing of $SiO_2$, but $K_2O$ contents are increased slightly, $Na_2O$ widely dispersed. We can show slightly inflection point and low frequency of dacites in range between 63-65 wt.% $SiO_2$, while continuous trend exit in variation diagram. Variation trends in Harker diagrams for the major, minor, trace and REEs suggest that the BAV (basaltic to andesitic volcanics) and DRV (dacitic to rhyolitic volcanics) are not related to a simple crystal fractionation process. In the regime of under 65 wt. % in silica content, fractionation of olivine and clinopyroxene is predominant, while that of plagioclase happens strongly higher than 65 wt.% (e.g., $SiO_2$, vs. Eu and Sr, MgO vs. $Al_2O_3$ and CaO). The latter means low-pressure fractional crystallization for DRV. On the discriminant diagram, DRV are located in more mature environment than BAV. The $(Ce/Sm)_N$ vs. CeN digram shows that these two classes cannot be related to crystal fractionation. If they had been produced by fractionation, although they plotted in a slightly elongate cluster along the same horizontal trend, DRV should lie to the right of these primitive compositions. These diagrams clearly rule out a simple fractionation throughout from BAV to DRV. BAV had been influenced greatly subductiong slab as shown by K/Yb vs. Ta/Yb. We suggest that BAV primitive magma generated higher degree of partial melting than DRV primitive magma. LILE (K, Ba, $Rb{\pm}Th$) enriched characteristics as shown in BAV are inherited from subducting slab fluids and/or higher degree of partial melting of mantle material. However, lower degree of partial melting of mantle relative to BA V and contamination at high-level magma reservoir caused LILE enrichment to DRV.

• Economic and Environmental Geology
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• v.25 no.2
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• pp.133-143
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• 1992

Ulsan granite is plotted mainly in the region of syeno-granite of the Streckeisen diagram, which consists with those of iron related granites in the area of Kimhae-Mulgum, while Chindong granites and Yucheon-Eonyang granites are plotted in the regions of granodiorite-diorite and monzo-granite, respectively. These granites show a differentiation trend of calc-alkaline magma, and their magmatic evolution from intermediate to acidic rocks is consistant with the general crystallization path of the Cretaceous granitic rocks in the Gyeongsang basin. The difference index (D.I.) is 70~90 for Ulsan granite, which lies between 35~80 of Chindong granites and 85~95 of Yucheon-Eonyang granites. These granites are distinguishable from each other by variation patterns of chemical elements. For instance, there is clear difference in content of some major and trace elements between Ulsan granite and Cu-related Chindong granites: Ulsan granite has high content of K (2.68%) and Ba (636 ppm), and low content of Ca (1.07%), Mg (0.50%) and Sr (185 ppm), whereas Chindong granites has less content of K (1.62%) and Ba (382 ppm), and higher content of Ca (3.75%), Mg (1.42%) and Sr (405 ppm). However, the content of Ulsan granite overlaps partly those of Yucheon-Eonyang granites, which are apparently dividable from Chindong granites. There is an usual trend that Cu content is high in Chindong granites of Cu province and Zn content is higher in Yucheon-Eonyang granites of Pb-Zn province. But it is unusual that Cu and Zn are higher in Ulsan granite (34 ppm, 74 ppm) than in Chindong granites (15 ppm, 22 ppm) and Yucheon-Eonyang granites (14 ppm, 43 ppm). This may be due to the reason that Ulsan granite is productive and Cu-Zn minerals are associated with iron ores. Productive Chindong granites in Haman-Gunbug area and Yuchon-Eonyang granites near ore deposits have higher content of Cu and Zn than Ulsang granite. Therefore, it is expected that chemical variation patterns of granites are applicable to distinguish mineral commodity of ore deposits (iron, copper, or lead-zinc) related with the granites in the Gyeongsasng basin.

• Applied Biological Chemistry
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• v.22 no.4
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• pp.191-197
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• 1979

${\beta}-Tyrosinase$ was purified and crystallized from cells of Escherichia intermedia A-21 grown in a medium supplemented with 0.2% L-tyrosine. Molecular weight of its subunit, Km value and absorption spectra were determined. Crystallization methods were also studied to eliminate any unnecessary procedures. The results obtained were as follows: 1. The purification procedure included ammonium sulfate fractionation, dialysis against potassium phosphate buffer, pH 6.0 and pH 7.0, and DEAE-Sephadex column chromatography. In the column chromatography, 11 mg of protein was applied per ml of DEAE-Sephadex for efficiency. 2. Steps of protamine sulfate treatment and Sephadex G-150 gel filtration could be eliminated for this enzyme from the known procedures. 3. The purified enzyme was dissolved in 0.01M potassium phosphate buffer containing 2-mercaptoethanol, with a concentration of 20mg/ml. Crystalline enzyme, which appears as hexagonal rods, was obtained by adding solid fine powdered ammonium sulfate to the enzyme solution. 4. Absorption maxima of the enzyme appeared at 340 and 430nm when associated with pyridoxal phosphate. 5. Km value of the enzyme for L-tyrosine was $2.31{\times}10^{-4}M$ and the molecular weight of its subunit was determined by SDS-polyacrylamide electrophoresis to be approximately 50,000.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1213-1218
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• 2013

In this study, Ga-doped ZnO (GZO) thin films were fabricated on transparent sapphire substrate by RF magnetron sputtering method and then investigated the effect of various substrate temperature on the electrical, optical properties and characteristic of crystallization of the GZO thin films. The electrical property indicated that the lowest resistivity ($4.18{\times}10^{-4}{\Omega}cm$), the highest carrier concentration ($6.77{\times}10^{20}cm^{-3}$) and Hall mobility ($22cm^2/Vs$) were obtained in the GZO thin film fabricated at $300^{\circ}C$. And for this condition, the highest c-axis orientation and (002) diffraction peak which exhibits a FWHM of $0.34^{\circ}$ were obtained. From the results of AFM measurements, it is known that the highest crystallinity is observed at $300^{\circ}C$. The transmittance spectrum in the visible range was approximately 80 % regardless of substrate temperature. The optical band-gap showed the blue-shift as increasing the substrate temperature to $300^{\circ}C$, and they are all larger than the band gap of bulk ZnO (3.3 eV). It can be explained by the Burstein-Moss effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.258-262
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• 2000

$YMnO_3$thin films are deposited on Si(100) and $Y_2O_3/Si(100)$ substrate by radio frequency sputtering. The deposition condition of oxygen partial pressure and annealing temperature have significant influences on the preferred orientation of $YMnO_3$film and the size of memory window. The results of x-ray diffraction show that the film deposited in the oxygen partial pressure of 0% is highly oriented along c-axis after annealing at $870^{\circ}C$ for 1 hr in oxygen ambient. However, the films deposited on Si and $Y_2O_3/Si$ in the oxygen partial pressures of 20% show $Y_2O_3$ peak, the excess $Y_2O_3$ in the $YMnO_3$film suppresses the c-axis oriented crystallization. Especially memory windows of the $Pt/YMnO_3/Y_2O_3/Si$ capacitor are 0.67~3.65 V at applied voltage of 2~12 V, which is 3 times higher than that of the film deposited on $Y_2O_3/Si$ in 20% oxygen (0.19~1.21 V) at the same gate voltage because the film deposited in 0% oxygen is well crystallized along c-axis.