• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.5
• /
• pp.504-508
• /
• 2022

Single crystal gallium oxide (Ga₂O₃) has been an emerging material for power semiconductor applications. However, the defect distribution of Ga₂O₃ substrates needs to be carefully characterized to improve crystal quality during crystal growth. We analyzed the type and the distribution of defects on commercial (-201) Ga₂O₃ substrates to get a basic standard prior to growing Ga₂O₃ crystals. Etch pit technique was employed to expose the type of defects on the Ga₂O₃ substrates. Synchrotron white beam X-ray topography was also utilized to observe the defect distribution by a nondestructive manner. We expect that the observation of defect distribution with three-dimensional geometry will also be useful for other crystal planes of Ga₂O₃ single crystals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04a
• /
• pp.49-51
• /
• 2009

Photonic crystal is a dielectric materials or a set of different dielectric materials with periodic structure of refractive index. Line defect obtained by leaving out a row of rod along the $\Gamma$-X direction. We showed the change of group velocity in waveguide mode and found a small group velocity. Characteristic of the small group velocity described by electric field distribution. As the phase variation, small group velocity confirmed from positive to negative.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.2
• /
• pp.128-132
• /
• 2010

Photonic crystal is dielectric materials or a set of different dielectric materials with periodic structure. Line defect is obtained by leaving out a row of rods along the $\Gamma$-X direction. We showed the change of group velocity in waveguide mode and found resultant small group velocity. Characteristics of the small group velocity were described by electric field distribution. Investigating the phase shift, it is confirmed if small group velocity is positive or negative.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.06a
• /
• pp.946-949
• /
• 2005

This paper deals with the algorithm development that inspects defects such as Bright Defect Dots, Dark Defect Dots, and Line Defect caused by the process of LCD(Liquid Crystal Display). While most of LCD production process is automated, the inspection of LCD panel and its appearance depends on manual process. So, the quality of the inspection is affected by the condition of worker. Especially, the more LCD size increases, the more the worker feels fatigued, which causes the probability of miss judgement. So, the automated inspection is required to manage the consistent quality of the product and reduce the production costs. In this paper, to solve these problems, we developed the imaging processing algorithm to inspect the defects in captured image of LCD. Experimental results reveal that we can recognize various types of defect of LCD with good accuracy and high speed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.81-82
• /
• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C\;and\;420^{\circ}C$, respectively. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd},\;V_{Se},\;Cd_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4$/GaAs did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.3
• /
• pp.267-272
• /
• 1999

Micro-defects in the undoped and MgO-doped $LiNbO_3$ single crystals, which were grown from a congruent melting composition (48.6 mol% $Li_2$O) by the CZ (Czochralski) method, were analyzed using microscopic techniques such as optical microscopy (OM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Effects of the dopant and g value (the fraction solidfied) on the domain structure and micro-defect were investigated to build a corelationship with a growth condition of crystal. It was observed that the micro-defect concentrated near the domain wall is caused by high stress. Especially, the micro-defect was observed to be biased toward a certain side of the domain wall.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.6
• /
• pp.373-377
• /
• 2000

For 6H-SiC single crystals which was obtained by sublimation growth (modified Lely process), the relation between the defects and the etch pits to be formed at the site of dislocations were discussed. Typical hexagonal etch pits were formed on (0001) basal plane. The similar hexagonal etch pit shapes were formed on the site of micropipe defects and it was realized that internal planar defects was formed with the same matrix crystal structure as grown crystals, through the observation of the etching morphology at those internal defects.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.1
• /
• pp.76-80
• /
• 1997

ZnSe single crystals were grown by seeded chemical vapor transport in $H_2$ atmosphere. The influence of the growth parameters on the crystal defect was investigated. The grown ZnSe single crystal was characterized by chemical etching, X-ray rocking curve and photoluminescenc e measurements.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.30 no.6
• /
• pp.215-219
• /
• 2020

After the specimen of A-site defect double Perovskite La1/3TaO3 single crystal was manufactured, the dielectric properties have been studied between the temperature range of 10 and 800 K. Under 500 K, a paraelectric behavior has been shown, and above 550 K, a dielectric anomaly and a thermal history of dielectric constant has been shown. An activation energy by measurement of ac-conductivity has been the largest with 1.83 eV in the areas below 560 K, 0.35 eV in the areas of 560~690 K, and 0.28 eV in the areas of high temperature above 690 K. From these results, it is assumed that in the areas below 500 K, La3+-ion and vacancy-site are arranged in disorder to maintain a paraelectric phase. And in the areas near 560 K with the highest activation energy, a dielectric anomaly is attributes to rearrangement of La3+-ion due to conduction to vacancy-site or jumping.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.26 no.3
• /
• pp.121-125
• /
• 2016

The effect of temperature and pressure in the nitrogen ambient furnace on bulk micro defect (BMD) and denuded zone (Dz) is experimentally investigated. It is found that as pressure increases, Dz depth increases with a small decrease of BMD density in the range of temperature, $100{\sim}300^{\circ}C$. BMD density with hot isostatic pressure treatment (HIP) at temperature of $850^{\circ}C$ is higher than that without HIP while Dz depth is lower due to much higher BMD density. As the pressure increases, BMD density is increased and saturated to a critical value, and Dz depth increases even if BMD density is saturated. The concentration of nitrogen increases near the surface with increasing pressure, and the peak of the concentration moves closer to the surface. The nitrogen is gathered near the surface, and does not become in-diffusion to the bulk of the wafer. The silicon nitride layer near the surface prevents to inject the additional nitrogen into the bulk of the wafer across the layer. The nitrogen does not affect the formation of BMD. On the other hand, the oxygen is moved into the bulk of the wafer by increasing pressure. Dz depth from the surface is extended into the bulk because the nuclei of BMD move into the bulk of the wafer.