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http://dx.doi.org/10.6111/JKCGCT.2020.30.6.215

Dielectric and conductivity properties of defect double Perovskite La1/3TaO3 single crystal  

Sohn, Jeong-Ho (The Faculty of Liberal Arts, Kaya University)
Abstract
After the specimen of A-site defect double Perovskite La1/3TaO3 single crystal was manufactured, the dielectric properties have been studied between the temperature range of 10 and 800 K. Under 500 K, a paraelectric behavior has been shown, and above 550 K, a dielectric anomaly and a thermal history of dielectric constant has been shown. An activation energy by measurement of ac-conductivity has been the largest with 1.83 eV in the areas below 560 K, 0.35 eV in the areas of 560~690 K, and 0.28 eV in the areas of high temperature above 690 K. From these results, it is assumed that in the areas below 500 K, La3+-ion and vacancy-site are arranged in disorder to maintain a paraelectric phase. And in the areas near 560 K with the highest activation energy, a dielectric anomaly is attributes to rearrangement of La3+-ion due to conduction to vacancy-site or jumping.
Keywords
$La_{1/3}TaO_3$ single crystal; A-site defect double Perovskite; Dielectric property; ac-Conductivity;
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