• 한국재료학회지
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• 제23권12호
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• pp.714-721
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• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• 한국태양에너지학회 논문집
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• 제23권2호
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• pp.59-70
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.231-231
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• 2006

We fabricated a polymer sub-microstructure for optical device application by two-photon-induced laser lithography technique. Polymer pattern could be minimized as small as ${\sim}100\;nm$. The photopolymerization resin contains laser-dye, thus promising a high level of the optical gain. We utilized the lithography technique to the photonic crystal application, where the template of the two-dimensional photonic crystal was modified by polymer gain medium as defect-shape and line-shape orientations. Photonic band gap effect from polymer-doped photonic crystals is expected to exploit the application such as organic solid-state laser device.

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.1019-1022
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• 2003

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film as working gas at 30W rf bias condition. A high pretilt angle of about 5$^{\circ}$ by ion beam(IB) exposure on the a-C:H thin film surface was measured. A good LC alignment by the IB alignment method on the a-C:H thin film surface was observed at annealing temperature of 250$^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of 300$^{\circ}C$. Consequently, the high LC pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C:H thin film surface as working gas at 30W rf bias condition can be achieved.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.35-40
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• 1998

There have two kinds of defects, planar defects and vertical defects which were called micropipes in SiC bulk crystals grown by a sublimation method. We could decrease these defects by adding a little piece of Si in the SiC powder or using Ta cylinder in the crucible. so were report the dependence of these defects in a wafer on silicon/carbon ratio in this paper. The chemical species sublimed from SiC powder is affected by carbon from the graphite wall of the crucible. It is important to control the chemical species on the substrate.

• 한국표면공학회지
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• 제28권3호
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• pp.174-181
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• 1995

Multilayered silicon cantilever beams as interconnection systems for bare chip burn-in socket applications have been designed, fabricated and characterized. Fabrication processes of the beam are employing standard semiconductor processes such as thin film processes and epitaxial layer growth and silicon wet etching techniques. We investigated silicon etch rate in 1-3-10 etchant as functions of doping concentration, surface mechanical stress and crystal defects. The experimental results indicate that silicon etch rate in 1-3-10 etchant is strong functions of doping concentration and crystal defect density rather than surface mechanical stress. We suggested the new fabrication processes of multilayered silicon cantilever beams.

• 한국전기전자재료학회논문지
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• 제32권3호
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• pp.192-195
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• 2019

Single-crystal diamond obtained by chemical vapor deposition (CVD) exhibits great potential for use in next-generation power devices. Low defect density is required for the use of such power devices in high-power operations; however, plastic deformation and lattice strain increase the dislocation density during diamond growth by CVD. Therefore, characterization of the dislocations in CVD diamond is essential to ensure the growth of high-quality diamond. In this work, we analyze the characteristics of the dislocations in CVD diamond through synchrotron white beam X-ray topography. In estimate, many threading edge dislocations and five mixed dislocations were identified over the whole surface.

• 한국결정성장학회지
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• 제6권2호
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• pp.194-202
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• 1996

고온가압성형된 다결정상 titanium diboride내에 형성된 전위구조를 투과전자현미경으로 분석하였다. Ion beam thinner를 사용하여 제작한 박편시편은 전위구조에 대한 특징을 드러내 보였다. 이들 특징들은 전위들로 배열된 적각결정입계, ledges나 steps들이 결정입계면에 존재하는 고각결정입계 등이다. 결정입계에서의 ledges나 steps들은 전위형성이나 결정입계 근처에서의 crack전파와 같은 결함구조로서 평가되었고, 고각결정입계는 부분적으로 결정입계전위를 포함하고 있는 것으로 관찰되었다. 또한, 시편의 미세구조에 존재하는 전위들의 Burger's vectors를 결정하였다.

• 한국결정성장학회지
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• 제13권3호
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• pp.105-110
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_{2}$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV, The exciton peak, $I_{1}^{d}$ at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The $I_{1}^{d}$ peak was dominantly observed in the ZnSe/GaAs : Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs : Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a $(V_{se}-V_{zn})-V_{zn}$.

• 한국결정성장학회지
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• 제9권4호
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• pp.402-416
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• 1999

The thermal distributions near the growth interface of 150nm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10nm from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it is confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient(G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective length of the thermal gradient for defect generation are varied, we defined the effective length as 10n,\m from th interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitials. The experimental results after detaching FZ and CZ crystals from the melt show that growth interfaces are filled with vacancies. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitials are necessary. Such interstitials recombine with vacancies which were generated at the growth interface, nest occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by te distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melts, respectively.