• Nuclear Engineering and Technology
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• 제54권4호
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• pp.1175-1184
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• 2022

The pore structure of uranium-bearing sandstone is one of the critical factors that affect the uranium leaching performance. In this article, uranium-bearing sandstone from the Yili Basin, Xinjiang, China, was taken as the research object. The fractal characteristics of the pore structure of the uranium-bearing sandstone were studied using mercury intrusion experiments and fractal theory, and the fractal dimension of the uranium-bearing sandstone was calculated. In addition, the effect of the fractal characteristics of the pore structure of the uranium-bearing sandstone on the uranium leaching kinetics was studied. Then, the kinetics was analyzed using a shrinking nuclear model, and it was determined that the rate of uranium leaching is mainly controlled by the diffusion reaction, and the dissolution rate constant (K) is linearly related to the pore specific surface fractal dimension (D_S) and the pore volume fractal dimension (D_V). Eventually, fractal kinetic models for predicting the in-situ leaching kinetics were established using the unreacted shrinking core model, and the linear relationship between the fractal dimension of the sample's pore structure and the dissolution rate during the leaching was fitted.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 춘계학술대회 논문집
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• pp.681-682
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• 2012

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.1269-1270
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• 2013

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.1273-1274
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• 2013

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.400-400
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• 2009

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 춘계학술대회 논문집
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• pp.317-318
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• 2007

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.351-351
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• 2008

• 대한수학회논문집
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• 제37권3호
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• pp.881-891
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• 2022

In the present paper, we have studied Miao-Tam equation on three dimensional almost coKähler manifolds. We have also proved that there does not exist non-trivial solution of Miao-Tam equation on the said manifolds if the dimension is greater than three. Also we give an example to verify the deduced results.

• Transactions on Electrical and Electronic Materials
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• 제15권3호
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• pp.159-163
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• 2014

More accurate CD (Critical Dimension) control is required for the nanometer-scaled devices. However, since the reflectivity between substrate and PR (Photoresist) becomes higher, the CD (Critical Dimension) swing curve was intensified. The higher reflectivity also causes PR notching due to the pattern of sub-layer. For this device requirement, it was optimized for the thickness, refractive index(n) and absorption coefficient(k) in the bottom anti-reflective coating(BARC; SiON) and photoresist with the minimum reflectivity. The computational simulated conditions, which were determined with the thickness of 33 nm, n of 1.89 and k of 0.369 as the optimum condition, were successfully applied to the experiments with no standing wave for the 0.13um-device. At this condition, the lowest reflectivity was 0.44%. This optimum condition for BARC SiON film was applied to the process for 0.13um-device. The optimum SiON film as BARC to PR and sub-layer could be formed with the accurate CD control and no standing waver for the nanometer-scaled semiconductor manufacturing process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.315-318
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• 1988

PHOTO-RESIST 자체문제로인해 감소되는 최소해상력, 촛집심도여유 및 CRITICAL DIMENSION (C.D.) 조정여유도등을 연구하였다. 기존에 사용중인 PHOTO-RESIST(큰 분자량)와 PHOTO-RESIST자체내에 CONTRAST 촉진 물질(CEM)이 첨가된것(INNER CEM TYPE) 및 PHOTO-RESIST구성성분중 작은 분자량/좁은 분자량 산포가 형성된 RESIN 의 PHOTO-RESIST(LOW MOLECULAR WEIGHT CONTROL TYPE)등 세가지 PHOTO-RESIST를 사용 하여 상기의 항목을 분석하였다. INNER CEM TYPE 및 LOW MOLECULAR WEIGHT CONTROL TYPE의 PHOTO-RESIST는 기존에 사용중인 RESIST보다, 최소 RESOLUTION은 약 0.2 - 0.3 um, DEPOCUS MARGIN은 약 0.8 - 1.2 um 및 C.D. CONTROL LATITUDE 향상된 것 등이 우수하였다.