• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.459-462
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• 2001

We have investgated the photoisomerization using light irradiation 8A5H LB film accumulated by monolayer and three layers on an ITO. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in 0.1mol/L NaClO$_4$ solution. The scan rate was 100mv/s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.187-189
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• 1995

A Surface Acoustic Wave Gas sensor for NO, CO, H$_2$gas detection was designed fabricated, and tested. A delay line device was designed to composite a single mode SAW oscillator which enables to measure a SAW velocity. To reduce the effect of temperature and humidity, dual delay line oscillator circuit was used. And final output was measured by digital frequency counter. NO, CO, H$_2$gas were detected by WO$_3$thin film deposited on the path of the Delay Line.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.298-301
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• 1995

In this study, the properties of Thermally Stimulated Current is measured automatic Data Acquisition System with a A/D Converter set. The A/D Converter set is configured with DIO 8255(Intel), AMD 9513 Timer/Counter and some Programed Controllers. Especially, the numerical method of asymtotic estimation to separate single relaxation curve and physical factors related to charged particles were obtained rapidely and completely. As a result, the data obtained by automatic Acquisition System need to be corrected to average value and the whole control and inspectation system is needed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.695-698
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• 2004

최근 고유가 시대를 맞으면서 대체 에너지로서 무한자원인 태양빛을 이용하는 염료감응형 태양전지에 대한 관심이 급증하고 있으며, 이미 오래전부터 이에 대한 연구는 이루어져왔다. 한편, 염료감응형 태양전지를 구성하는 여러 분야 중 산화물 전극이나 전해질 또는 염료에 대한 연구는 많은 관심속에 진행되어오고 있는데 반해 상대전극에 대한 연구는 미비한 실정이다. 이에 본 연구에서는, 일반적으로 태양전지의 상대전극으로 사용되어오고 있는 Pt를 스퍼터링법 및 전기도금법을 이용하여 증착한 후 AFM을 통한 표면 형상 및 전기화학적 특성을 바탕으로 비교하여 태양전지의 상대전극으로서 적합한 제조 조건을 결정하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.537-542
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• 2012

DSSCs efficiency by thickness of $TiO_2$ photoelectrode and thickness differences between two substrates studied. DSSCs is made of the doctor blade method and photoelectrode annealing temperature elevated in a different ways. In addition, cells efficiencies of according to the different thickness between $TiO_2$ photoelectrode substrate and Pt counter electrode was measured. Efficiency of DSSCs made with $TiO_2$ photoelectrode of 18 ${\mu}m$ thickness and the gap difference between the substrate 28 ${\mu}m$ shows a highest 4.805% efficiency.

• Tribology and Lubricants
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• v.10 no.3
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• pp.39-46
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• 1994

In order to investigate the effect of the ceramic reinforcements on the wear properties of aluminum bronze composites, Cu-8wt%Al aluminum bronze alloys reinforced with the Saffil alumina short fiber were produced by the powder metallurgical method and tested by a pin-ondisc wear testing machine. The wear surfaces of the pin specimens and discs, wear debris, and the cross sections of the wear specimens were observed by SEM. The wear mechanism according to various wear conditions and the change of microstructure in the composites were also discussed. In the results, the reinforcement of the composites with alumina short fiber was very effective at the higher applied load over 10N. The material transportation to the counter disc was observed in the alloy specimens without reinforcements. However, the composites reinforced with ceramic particles and fibers showed the resistance against the material transportation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.210-215
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• 1994

In the CMOS device, Counter doping is needed to adjust threshold voltage because of the difference between n-MOSFET and p-MOSFET well doping concentration when n+ polysilicon gate is used. Therefore buried channel is formed in the p-channel MOSFET degrading properties. So well doping concentration and doping condition should be considered in fabrication process and device design. Here we are to extract the initial process condition using simulation and fabricate p-MOSFET device and then compare the subthreshold characteristics of simulated and fabricated device.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2005.06a
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• pp.344-349
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• 2005

Neutron count rate measurements to assay fissile content of uranium powder have been carried out in a neutron counter. The induced fission neutrons by Cf-252 neutron source are counted as the variation of fissile material in fuel material. The measured counts are compared with equivalent results obtained from calculation. It shows that the measured neutron counts versus quantity of $UO_2$ powder enrichment agreed reasonably well with the calculated values.

• Journal of the Korea Safety Management & Science
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• v.16 no.4
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• pp.391-396
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• 2014

For the purpose of finding out the acoustical characteristics of exterior materials in bridge, analytical studies are performed with boundary elements method by using the commercial program SYSNOISE. Before analysis, to figure out material property, it was conducted experiments of absorption coefficient for absorptive material. And prediction of pressure were conducted I GIRDER type (before & after installation of absorption panel ) and BOX GIRDER type (before & after installation of absorption panel) The results show that when the absorption panel is installed, environment around bridge can help reduce traffic noise. It was proved to be the effective noise reduction counter-plan for a traffic noise in the bridges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.86-90
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• 1992

We have studied the characteristics of n-and p-channel FETs with submicron channel length fabricated by twin-well process. Threshold voltage variation and potential distribution with channel ion implantation conditions and impurity profile of n-and p-channel region wee simulated using SUPREM-II and MINIMOS 4.0 simulater, P-channel FET had buried-channel in the depth of 0.15 $\mu\textrm{m}$ from surface by counter-doped boron ion implantation for threshold voltage adjustment. As a result of device measurement, we have obtained good drain saturation characteristics for 3.3 [V] opreation, minimized short channel effect with threshold voltage shift below 0.2[V], high punchthrough and breakdown voltage above 10[V] and low subthreshold value.