• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.289.1-289.1
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• 2016

Germanium (Ge) with higher carrier mobility and a lower crystallization temperature has been considered as the channel material of thin-film transistors for display applications. Various methods were studied for crystallizaion of poly-Ge from amorphous Ge at low temperature. Especially Metal induced crystalliazation (MIC) process was widely studied because low process cost. In this paper, we investigate copper diffusion process of different thick (70 nm, 350 nm) poly-Ge film obtained by MIC process at various temperatures (250, 300, and $350^{\circ}C$) through atomic force microscopy (AFM), Raman spectroscopy, and secondary ion mass spectroscopy (SIMS) measurement. Crystallization completeness and grain size was similar in all the conditions. Copper diffusion profile of 370 nm poly-Ge film show simirly results regardless of process temperature. However, copper diffusion profile of 70 nm poly-Ge film show different results by process temperature.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.2
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• pp.38-43
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• 2019

Electrochemical etching is a popular process to apply metal patterning in various industries. In this study, the electrochemical etching using a patterned copper layer was proposed to fabricate multilayered structures. The process consists of electrodeposition, laser patterning, and electrochemical etching, and a repetition of this process enables the production of multilayered structures. In the fabrication of a multilayered structure, an etch factor that reflects the etched depth and pattern size should be considered. Hence, the etch factor in the electrochemical etching process using the copper layer was calculated. After the repetition process of electrochemical etching using copper layers, the surface characteristics of the workpiece were analyzed by EDS analysis and surface profilometer. As a result, multilayered structures with various shapes were successfully fabricated via electrochemical etching using copper layers.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.2
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• pp.93-100
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• 2021

Copper sheets has been used widely in electric and electron industry fields because they have good electric and heat conduction property of the material. And, in order to bond copper material, a kind of soldering process is generally used. But, because it is difficult to bond by soldering between overlapped thin copper sheets, so, another kind of brazing bonding process can be used in that case. But, because the brazing process needs wide bonding area, it needs heat treatment process in electric furnace. Generally, for spot welding of sheets, a conventional electric Resistance Spot Welding process(RSW) has been used, it has welding characteristics using contact resistance heating induced by electric current flow between sheets. But, because copper sheets has the low electric resistance, it is difficult to weld by electric resistance spot welding. So, in this study, an electric Resistance heated Surface Friction Spot Welding process(RSFSW) is suggested and is testified for the spot welding ability of thin copper sheets. It is known from the experimental results and simulation that the suggested spot welding process will be able to improve the spot welding ability of copper sheets by the combined three kinds of heating generated by surface friction by rotating pin, and conducted from heated steel electrode, and generated by contact resistance of electricity.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.134-134
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• 2016

The effect of different thermal treatments on the sub-50 nm copper nanoparticles is examined in the aspects of chemical, electrical and surface morphology. The copper nanoparticles are chemically synthesized and fabricated for paste-type solution. Simple bar coating method is practiced as a deposition process to form copper thin film on a typical slide glass. Deposited copper thin films are annealed by two different routes: general tube furnace with 99.99 % Ar atmosphere and selective laser sintering process. The thermal behavior of the different thermal-treated copper thin films is compared by SEM, XRD, FT-IR and XPS analysis. In this study, the laser sintering process ensures low annealing temperature, fast working speed and ambient-accessible route. Moreover, the laser-sintered copper thin film shows good electrical property and enhanced chemical stability than conventional thermal annealing process. Consequently, the proposed laser sintering process can be compatible with plastic substrate for flexible applications.

• Journal of Powder Materials
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• v.16 no.2
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• pp.131-137
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• 2009

This paper deals with the effects of the surfactant and preplate process (sensitization and activation) on electroless copper plating on carbon nano-fiber (CNF). Ultrasonic irradiation was applied both during dispersion of CNF and during electroless plating containing preplate process. The dispersion of CNF and flatness of the plated copper film were discussed based on the changes in surfactant concentration and preplate process time. It was clearly shown that high concentration of surfactant and long time of preplate process could promote the agglomeration of CNF and uneven copper plating on CNF.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.826-827
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• 2006

Copper infiltration is demonstrated as a viable solution to achieve higher mechanical properties by filling the interconnected porosities of a ferrous structure with copper infiltrant. This paper will present the results of a design of experiments study based on the selected processing variables in the copper infiltration process. The variables are the following: Infiltrating temperatures, infiltrating time at pre-heat zone and hot zone, the green density of iron part, the migration of copper into the iron part at different processing conditions. The results show the flexibility of the infiltration process to attain certain mechanical properties by changing the processing conditions.

• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.122-127
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• 2017

Graphene grown on copper-foil substrates by chemical vapor deposition (CVD) has been attracting interest for sensor applications due to an extraordinary high surface-to-volume ratio and capability of large-scale device fabrication. However, CVD graphene has a polycrystalline structure and a high density of grain boundaries degrading its electrical properties. Recently, processes such as electropolishing for flattening copper substrate has been applied before growth in order to increase the grain size of graphene. In this study, we systemically analyzed the effects of the process condition of electropolishing copper foil on the quality of CVD graphene. We observed that electropolishing process can reduce surface roughness of copper foil, increase the grain size of CVD graphene, and minimize the density of double-layered graphene regions. However, excessive process time can rather increase the copper foil surface roughness and degrade the quality of CVD graphene layers. This work shows that an optimized electropolishing process on copper substrates is critical to obtain high-quality and uniformity CVD graphene which is essential for practical sensor applications.

• International Journal of Korean Welding Society
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• v.3 no.2
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• pp.46-52
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• 2003

The refinement of microstructure and phase transformation near the interface of pure copper/carbon steel dissimilar metals joints with various friction welding parameters have been studied in this paper. The microstructure of copper and carbon steel joints were changed to be a finer grain compared to those of the base metals due to the frictional heat and plastic deformation. The microstructure of copper side experienced wide range of deformed region from the weld interface and divided into very fine equaxied grains and elongated grains. Especially, the microstructures near the interface on carbon steel were transformed from ferrite and pearlite dual structure to fine ferrite, grain boundary pearlite and martensite due to the welding thermal cycle and rapid cooling rate after welding. These microstructures were varied with each friction welding parameters. The recrystallization on copper side is reason for softening in copper side and martensite transformation could explain the remarkable hardening region in carbon steel side.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.78-84
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• 2012

An in-situ optical monitoring method for real-time process monitoring of electrochemical copper deposition (CED) is presented. Process variables to be controlled in achieving desired process results are numerous in the CED process, and the importance of the chemical bath conditions cannot be overemphasized for a successful process. Conventional monitoring of the chemical solution for CED relies on the pH value of the solution, electrical voltage level for the reduction of metal cations, and gravity measurement by immersing sensors into a plating bath. We propose a nonintrusive optical monitoring technique using three types of optical sensors such as chromatic sensors and UV/VIS spectroscopy sensors as potential candidates as a feasible optical monitoring method. By monitoring the color of the plating solution in the bath, we revealed that optically acquired information is strongly related to the thickness of the deposited copper on the wafers, and that the chromatic information is inversely proportional to the ratio of $Cu$ (111) and {$Cu$ (111)+$Cu$ (200)}, which can used to measure the quality of the chemical solution for electrochemical copper deposition in advanced interconnection technology.