• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.125-126
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• 2005

Recently semiconductor devices are required more smaller scale and more powerful performance. For smaller scale of device, multilayer structure is proposed. And, for the higher performance, interconnection material is change to copper, because copper has high EM(Electro-migration)and low resistivity. Then copper CMP process is a great role in a multilayer formation of semiconductor. Copper process is different from aluminum process. ECP process is one of the copper processes. In this paper, we focused on the defects tendency by copper thickness which filled using ECP process. we observed hump high and dishing. Conclusively, hump hight reduced at copper thickness increased Also dishing reduced.

• Journal of Environmental Science International
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• v.19 no.9
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• pp.1119-1127
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• 2010

The behavior of copper throughout the whole process of wastewater treatment plant that uses the activated sludge process to treat the wastewater of petrochemical industry that contains low concentration of copper was investigated. Total inflow rate of wastewater that flows into the aeration tank was $697\;m^3$/day with 0.369 mg/L of copper concentration, that is, total copper influx was 257.2 g/day. The ranges of copper concentrations of the influent to the aeration tank and effluent from the one were 0.315 ~ 0.398 mg/L and 0.159 ~ 0.192 mg/L, respectively. The average removal rate of copper in the aeration tank was 50.8 %. The bioconcentration factor (BCF) of copper by microbes in the aeration tank was 3,320. The accumulated removal rate of copper throughout the activated sludge process was 71.3%, showing a high removal ratio by physical and chemical reactions in addition to biosorption by microbes. The concentration of copper in the solid dehydrated by filter press ranged from 74.8 mg/kg to 77.2 mg/kg and the concentration of copper by elution test of waste was 2.690 ~ 2.920 mg/L. It was judged that the copper concentration in dehydrated solid by bioconcentration could be managed with the control of that in the influent.

• International Journal of Quality Innovation
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• v.2 no.2
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• pp.69-92
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• 2001

The laser-assisted seeding (LAS) process has potential to replace conventional electroless copper plating in Printed Circuit Board (PCB) manufacturing since it combines the steps of laser drilling and plating into one single process. In the LAS process, the single extra LAS step can metallize a microvia. Thus, the process steps can be greatly reduced and the productivity enhanced, but also the high aspect ratio microvias can be metallized. The objectives of this paper are to study the LAS copper thickness within PCB microvias and the thermal reliability of the microvias produced by this process. It was found that results were satisfactory in both the reliability test and also the LAS copper thickness which both comply with IPC standard, the copper thickness produced by the LAS process is sufficient for subsequent electro-plating process. The reliability of the microvias produced by LAS process is acceptable which are free from any voids, corner cracks, and distortion in the plated copper.

• Journal of Korea Foundry Society
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• v.25 no.6
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• pp.259-264
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• 2005

The copper clad steel wire is used extensively as lead wires of electronic components such as capacitors, diodes and glass sealing lamp because the wire combines the strength and low thermal expansion characteristic of Fe-Ni steel with the conductivity and corrosion resistance of copper. In order to fabricate the copper clad steel wire, several processes including electro-plating, tubecladding extrusion process and dip forming process have been introduced and applied. The electroplating process for the production of copper clad steel wire shows poor productivity and induces environmental load generation such as electroplating solution. The dip forming process is suitable to mass production of copper clad steel such as trolley wire. and need expensive manufacturing facilities. The present paper describes the improvement of the conventional continuous casting process to fabricate copper clad steel wire, which its core metal is low thermal expansion Fe-Ni alloy and its sheath material is copper. In particular, the formation of intermetallic compound at interface between core and sheath was investigated in order to introduce optimum continuous casting process parameter for fabrication of copper clad steel wire with higher electrical conductivity. The mechanical strength of copper clad steel wire was also investigated through wiredrawing process with of 95% in total reduction ratio.

• Journal of Powder Materials
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• v.16 no.5
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• pp.351-357
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• 2009

A two-step recovery method was developed to produce copper powders from copper chloride waste solution as byproducts of MoO$_3$ leaching process. The first step consisted of replacing noble copper ions with external Fe$^{3+}$ ions which were formed by dissolving iron scraps in the copper chloride waste solution. The replaced copper ions were subsequently precipitated as copper powders. The second step was cementation of entire solution mixture to separate (pure) copper powders from aqueous solution of iron chloride. Cementation process variables of temperature, time, and added amount of iron scraps were optimized by using design of experiment method and individual effects on yield and efficiency of copper powder recovery were investigated. Copper powders thus obtained from cementation process were further characterized using various analytical tools such as XRD, SEM-EDS and laser diffraction and scattering methods.Cementation process necessitated further purification of recovered copper powders and centrifugal separation method was employed, which successfully yielded copper powders of more than 99% purity and average 1$\sim$2$\mu$m in size.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.55-60
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• 2020

The recent semiconductor packaging technology is evolving into a high-performance system-in-packaging (SIP) structure, and copper-to-copper bonding process becomes an important core technology to realize SIP. Copper-to-copper bonding process faces challenges such as copper oxidation and high temperature and high pressure process conditions. In this study, the bonding interface quality of low-temperature copper-to-copper bonding using a two-step plasma treatment was investigated through quantitative bonding strength measurements. Our two-step plasma treatment formed copper nitride layer on copper surface which enables low-temperature copper bonding. The bonding strength was evaluated by the four-point bending test method and the shear test method, and the average bonding shear strength was 30.40 MPa, showing that the copper-to-copper bonding process using a two-step plasma process had excellent bonding strength.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.216-221
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• 2016

A sintering process for copper based films using a rapid thermal process with infrared lamps is proposed to improve the electrical properties. Compared with films produced by conventional thermal sintering, the microstructure of the copper based films contained fewer internal and interfacial pores and larger grains after the rapid thermal process. This high-density microstructure is due to the high heating rate, which causes the abrupt decomposition of the organic shell at higher temperatures than is the case for the low heating rate; the high heating rate also induces densification of the copper based films. In order to confirm the effect of the rapid thermal process on copper nanoink, copper based films were prepared under varying of conditions such as the sintering temperature, time, and heating rate. As a result, the resistivity of the copper based films showed no significant changes at high temperature ($300^{\circ}C$) according to the sintering conditions. On the other hand, at low temperatures, the resistivity of the copper based films depended on the heating rate of the rapid thermal process.

• Journal of Powder Materials
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• v.19 no.6
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• pp.405-411
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• 2012

Recovery of copper powder from copper chloride solution used in $MoO_3$ leaching process was carried out using a cementation method. Cementation is a simple and economical process, necessitating less energy compared with other recovery methods. Cementation utilizes significant difference in standard reduction potential between copper and iron under standard condition. In the present research, Cementation process variables of temperature, time, and added amount of iron scraps were optimized by using design of experiment method and individual effects on yield and efficiency of copper powder recovery were investigated using bench-scale cementation reaction system. Copper powders thus obtained from cementation process were further characterized using various analytical tools such as XRF, SEM-EDS and laser diffraction and scattering methods. Cementation process necessitated further purification of recovered copper powders and centrifugal separation method was employed, which successfully yielded copper powders of more than 99.65% purity and average $1{\mu}m$ in size.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1640-1644
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• 2006

The first issue that should be overcome in copper process is its poor adhesive strength between pure copper film and glass substrate. In this study, defining the adhesive strength of pure copper film on various substrates and clarifying the key deposition parameters are presented for the investigation of copper process. First, using different kinds of surface plasma treatments were studied and the results showed that the adhesive strength was not improved even though the roughness of glass substrate surface was increased. Second, adding an adhesive layer between glass substrate and pure copper film was used to enhance the adhesion. Based on the data in the present paper, adopting copper alloy film as an adhesive layer can have capability preventing peeling problem in copper process. Besides, Cu/Cu alloy structure could be etched with the same etchant with better taper angle than the one with single layer of Cu. Unlike Cu/Mo structure, there is no residual problem for Cu/Cu alloy structure during etching process. Finally, this structure was examined in electrical test without significant difference in comparison with the conventional metal process.

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.2
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• pp.303-309
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• 2010

Copper tube rolling process using the planetary rolling mill has been studied by using finite element method. This rolling is process that makes copper tube by three-roll with mannesmann method. Also, rolling process has started from the cold working and finished to the hot working. This rolling process has more advantage that make reduction of process and cost than existing extrusion. This process includes various and complex process parameters. Each of the process parameters affects forming result. Therefore, all of the process parameters should be considered in copper tube rolling. Rolling process for copper tube was successfully simulated and it should be useful to determine optimal rolling condition.