• Journal of Magnetics
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• 제12권3호
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• pp.93-96
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• 2007

We investigated the electronic structure and magnetic properties of zinc-blende CrP/SrBi interface by using the all-electron full-potential linearized augmented plane wave method within the generalized gradient approximation. It is found that the half-metallicity is destroyed when the two half-metals are in contact. Magnetic moments of the atoms forming the supercell differ considerably from the respective values obtained for the bulk structures of the two materials. Cr atoms being and not being in contact with Bi atoms have magnetic moment 3.43 and $2.69{\mu}_B$, respectively. Bi atoms lose their majority electrons which results in their negative polarization. Alkaline Sr atoms are very weakly negatively polarized. The spin distribution within the supercell is such that well separated regions of positive and negative polarization are seen, especially around the layer of P atoms being in contact with the layer of Sr atoms.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.9-14
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• 2017

$ISnO_2$ thin films were prepared on p-type and n-type Si substrates to research the interface characteristics between $SnO_2$ and substrate. After the annealing processes, the amorphous structure was formed at the interface to make a Schottky contact. The O 1s spectra showed the bond of 530.4 eV as an amorphous structure, and the Schottky contact. The analysis by the deconvoluted spectra was observed the drastic variation of oxygen vacancies at the amorphous structure because of the depletion layer is directly related to the oxygen vacancy. $SnO_2$ thin film changed the electrical properties depending on the characteristics of substrates. It was confirmed that it is useful to observe the Schottky contact's properties by complementary using the XPS analysis and I-V measurement.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.988-991
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• 2011

We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different device structure as a bottom and top contact FET. Also, we used a $SiO_2$ as a gate insulator and analyzed using a current-voltage (I-V) characteristics of the bottom and top contact CuPc FET device. In order to discuss the channel formation, we were observed the capacitance-gate voltage(C-V) characteristics of the bottom and top contact CuPc FET device.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.1010-1017
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• 2011

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2004년도 추계학술대회 논문집
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• pp.606-610
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• 2004

In this paper, we would like to explain about the structure analysis of wheel set as variation of contact position between wheel and rail. Measurement of interacted force between wheel and rail is necessary for running safety evaluation as important factor of derailment mechanism. It's necessary to running safety evaluation of rolling stock. Wheel unload and lateral force change as variation of contact position between wheel and rail. Interacted force between wheel and rail got as each contact position through computer simulation. This is necessary process as first research for evaluation of derailment phenomenon and running safety.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.72-74
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• 2002

A submicron contact scheme using $WN_x$ diffusion barrier has been suggested for multilevel interconnect structure. The contact resistance of $0.4\times0.48\mu\textrm{m}^2$ size Al/WN/Ti/$n^+$-Si is 120-140 $\Omega$ and the leakage current density is below than $10^{-16}$$-10^{-15}A/\mu\textrm{m}^2$. The effect of F atoms on the submicron contact has been investigated with the nuclear resonance analysis method.

• 대한수학회지
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• 제61권1호
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• pp.1-28
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• 2024

In this article, we associate a contact structure to the conjugacy class of a periodic surface homeomorphism, encoded by a combinatorial tuple of integers called a marked data set. In particular, we prove that infinite families of these data sets give rise to Stein fillable contact structures with associated monodromies that do not factor into products to positive Dehn twists. In addition to the above, we give explicit constructions of symplectic fillings for rational open books analogous to Mori's construction for honest open books. We also prove a sufficient condition for the Stein fillability of rational open books analogous to the positivity of monodromy for honest open books due to Giroux and Loi-Piergallini.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.294.2-294.2
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• 2016

Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately $23{\Omega}{\cdot}{\mu}m$ at room temperature (approximately $19{\Omega}{\cdot}{\mu}m$ at 100 K).

• Journal of Mechanical Science and Technology
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• 제16권10호
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• pp.1222-1228
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• 2002

This research is the development of a flexible tactile sensor array for service robots using PVDF (polyvinylidene fluoride) film for the detection of a contact state in real time. The prototype of the tactile sensor which has 8${\times}$8 array using PVDF film was fabricated. In the fabrication procedure, the electrode patterns and the common electrode of the thin conductive tape were attached to both sides of the 281$\mu\textrm{m}$ thickness PVDF film using conductive adhesive. The sensor was covered with polyester film for insulation and attached to the rubber base for a stable structure. The proposed fabrication method is simple and easy to make the sensor. The sensor has the advantages in the implementing for practical applications because its structure is flexible and the shape of the each tactile element can be designed arbitrarily. The signals of a contact force to the tactile sensor were sensed and processed in the DSP system in which the signals are digitized and filtered. Finally, the signals were integrated for taking the force profile. The processed signals of the output of the sensor were visualized in a personal computer, and the shape and force distribution of the contact object were obtained. The reasonable performance for the detection of the contact state was verified through the sensing examples.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2006년도 추계학술대회 논문집(제1권)
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• pp.211-216
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• 2006

수중세장체의 동적거동 해석시, 세장체간의 접촉, 세장체와 지면의 접촉이 흔히 포함된다. 본 논문에서는 접촉모델의 동적거동 해석을 위해 효율적이고 일반적인 접촉알고리듬을 다루고 있다. 절대 좌표계에서 시스템의 경계상자를 만들고, 그것을 세분화하여 접촉감지에 사용하는 전역 감지 기술이 제안되었다. 접촉 감지의 횟수, 즉 접촉 감지 시간이 다른 방법에 비해 작다는 것이 이 방법의 장점이다. 개발된 효율적인 접촉 감지 알고리듬을 3차원 비선형 세장체 해석 프로그램에 적용하였으며, 몇 가지 수치예제를 통하여 제안된 방법의 효율성을 검증하였다.