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http://dx.doi.org/10.4313/JKEM.2011.24.12.988

Electrical Properties of CuPc FET Using Two-type Electrode Structure  

Lee, Won-Jae (Department of Electronic Engineering, Kyungwon University)
Lee, Ho-Shik (Department of Hospital Service and Biomedical Science, Dongshin University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.12, 2011 , pp. 988-991 More about this Journal
Abstract
We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different device structure as a bottom and top contact FET. Also, we used a $SiO_2$ as a gate insulator and analyzed using a current-voltage (I-V) characteristics of the bottom and top contact CuPc FET device. In order to discuss the channel formation, we were observed the capacitance-gate voltage(C-V) characteristics of the bottom and top contact CuPc FET device.
Keywords
Organic FET; CuPc; Bottom and top contact FET;
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Times Cited By KSCI : 5  (Citation Analysis)
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