• Title/Summary/Keyword: contact resistance reduction

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Study on the Excessive Current Noise in $RuO_2$ Thick Film Resistors (산화루테늄계 후막 저항기의 과도한 전류잡음에 관한 고찰)

  • 김지호;김진용;임한조;신철재;박홍이
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.3
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    • pp.79-86
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    • 1992
  • The cause of excess current noise which appears some times in RuO$_2$ thick film chip resistors and the process to reduce such noise are investigated. We observed that too large thermal expansion coefficients of resistor paste and electrode metal paste can induce the mechanical stress and microcracks in the contact region of the two sintered materials. Such microcracks result in the reduction of conduction paths in the sintered electrode and this provokes the increase of the resistance value and the current noise. Such excessive current noise induced by microcracks could be reduced or even eliminated by using an enlarged overcoat patterns in the plating process or by adding an additional annealing process before plating.

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Study of Oxygen Plasma Effects to Reduce the Contact Resistance of n-type GaN with Nitrogen Polarity (질소 분극면을 갖는 N형 질화물반도체의 접촉저항 감소를 위한 산소 플라즈마 효과에 관한 연구)

  • Nam, T.Y.;Kim, D.H.;Lee, W.H.;Kim, S.J.;Lee, B.G.;Kim, T.G.;Jo, Y.C.;Choi, Y.S.
    • Journal of the Korean Vacuum Society
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    • v.19 no.1
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    • pp.10-13
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    • 2010
  • We studied the effect of $O_2$ plasma treatments on the electrical property of Ti / Al ohmic contacts to N-face n-type GaN. The surface of N-face, n-type GaN has been treated with $O_2$ plasma for 120 s before the deposition of bilayered electrodes, Ti (50 nm) / Al (35 nm), and its contact resistance was compared with that of the reference sample without $O_2$ plasma. As a result, we found that the ohmic contact was reduced from $4.3\;{\times}\;10^{-1}\;{\Omega}cm^2$ to $1.25\;{\times}\;10^{-3}\;{\Omega}cm^2$ by applying $O_2$ plasma on the surface of n-type GaN, which was attributed to the reduction in the Schottky barrier height (SBH), caused by nitrogen vacancies formed during the $O_2$ plasma process.

Characteristics of Calcium Leaching Resistance for Concrete Mixed with Mineral Admixture (광물질 혼화재를 혼합한 콘크리트의 칼슘용출 저항 특성)

  • Choi, So-Yeong;Choi, Yoon-Suk;Yang, Eun-Ik
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.20 no.4
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    • pp.59-67
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    • 2016
  • Concrete is a very useful construction material for the sealing disposal of hazardous substances. In general, mass concrete is applied to these structures. And, the mineral admixtures are recommended for the long term performance. Calcium leaching could be happened due to the contact with pure water in underground structures. Thus, it is needed to evaluate the resistance of calcium leaching for concrete mixed with mineral admixtures. From the test results, the mineral admixtures are effective to the improvement of long term compressive strength and chloride diffusion coefficient in concrete members. When calcium leaching is happened, however, the reduction of compressive strength and chloride penetration resistance is severe than OPC case, the micro pore distribution is adversely affected. Consequently, when the mineral admixtures are applied to underground structures which is exposed to calcium leaching environment, it is desirable to reduce water-to-binder ratio, to expose after the sufficient pozolanic reaction, and to use BFS than FA.

Effects of Process Temperature on the Tribological Properties of Tetrahedral Amorphous Carbon (ta-C) Coating (공정 온도에 따른 사면체 비정질 카본 (ta-C) 코팅의 트라이볼로지적 특성연구)

  • Kang, Yong-Jin;Kim, Do Hyun;Ryu, Hojun;Kim, Jongkuk;Jang, Young-Jun
    • Tribology and Lubricants
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    • v.35 no.6
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    • pp.362-368
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    • 2019
  • In this study, mechanical and tribological properties were investigated by varying the process temperature (50, 100, 125 and 150℃) to reduce internal stress. The internal stress reduction by thermal dissociation ta-C coating film with increasing temperature is confirmed through the curvature radius of the ta-C coating according to the temperature of the SUS plate. As the coating temperature increased, the mechanical properties (hardness, modulus, toughness) deteriorated, which is in agreement with the Raman analysis results. As the temperature increased, the sp2 phase ratio increased owing to the dissociation of the sp3 phase. The friction and wear properties are related to the process temperature during ta-C coating. Low friction and wear properties are observed in high hardness samples manufactured at 50℃, and wear resistance properties decreased with increasing temperature. The contact area is expected to increase owing to the decrease of hardness(72 GPa to 39 GPa) and fracture toughness with increasing temperature which accelerated wear because of the debris generated. It was confirmed that at process temperature of over than 100℃, the bond structure of the carbon film changed, and the effect of excellent internal stress was reduced. However, the wear resistance simultaneously decreased owing to the reduction in fracture toughness. Therefore, in order to increase industrial utilization, optimum temperature conditions that reduce internal stress and retain mechanical properties.

Strain-induced enhancement of thermal stability of Ag metallization with Ni/Ag multi-layer structure

  • Son, Jun-Ho;Song, Yang-Hui;Kim, Beom-Jun;Lee, Jong-Ram
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.157-157
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    • 2010
  • Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

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Fabrication and Electrical Characteristics of $p^{+}$-n Ultra Shallow Junction Diode with Co/Ti Bilayer Silicide (Co/Ti 이중막 실리사이드를 이용한 $p^{+}$-n극저접합 다이오드의 제작과 전기적 특성)

  • Chang, Gee-Keun;Ohm, Woo-Yong;Chang, Ho-Jung
    • Korean Journal of Materials Research
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    • v.8 no.4
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    • pp.288-292
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    • 1998
  • The p*-n ultra shallow junction diode with Co/Ti bilayer silicide was formed by ion implantation of $BF_{2}$ energy : 30KeV, dose : $5\times10^{15}cm^{-2}$] onto the n-well Si(100) region and RTA-silicidation of the evaporated Co($120\AA$)/Ti($40\AA$) double layer. The fabricated diode exhibited ideality factor of 1.06, specific contact resistance of $1.2\times10^{-6}\Omega\cdot\textrm{cm}^2$ and leakage current of $8.6\muA/\textrm{cm}^2$(-3V) under the reverse bias of 3V. The sheet resistance of silicided emitter region, the boron concentration at silicide/Si interface and the junction depth including silicide layer of ($500\AA$ were about $8\Omega\Box$, $6\times10^{19}cm^{-3}$, and $0.14\mu{m}$, respectively. In the fabrication of diode, the application of Co/Ti bilayer silicide brought improvement of ideality factor on the current-voltage characteristics as well as reduction of emitter sheet resistance and specific contact resistance, while it led to a little increase of leakage current.

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Adhesion Characteristics and the High Pressure Resistance of Biofilm Bacteria in Seawater Reverse Osmosis Desalination Process (역삼투 해수담수화 공정 내 바이오필름 형성 미생물의 부착 및 고압내성 특성)

  • Jung, Ji-Yeon;Lee, Jin-Wook;Kim, Sung-Youn;Kim, In-S.
    • Journal of Korean Society of Environmental Engineers
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    • v.31 no.1
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    • pp.51-57
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    • 2009
  • Biofouling in seawater reverse osmosis (SWRO) desalination process causes many problems such as flux decline, biodegradation of membrane, increased cleaning time, and increased energy consumption and operational cost. Therefore biofouling is considered as the most critical problem in system operation. To control biofouling in early stage, detection of the most problematic bacteria causing biofouling is required. In this study, six model bacteria were chosen; Bacillus sp., Flavobacterium sp., Mycobacterium sp., Pseudomonas aeruginosa, Pseudomonas fluorescens, and Rhodobacter sp. based on report in the literature and phylogenetic analysis of seawater intake and fouled RO membrane. The adhesion to RO membrane, the high pressure resistance, and the hydrophobicity of the six model bacteria were examined to find out their fouling potential. Rhodobacter sp. and Mycobacterium sp. were found to attach very well to RO membrane surface compared to others used in this study. The test of hydrophobicity revealed that the bacteria which have high hydrophobicity or similar contact angle with RO membrane ($63^{\circ}$ of contact angle) easily attached to RO membrane surface. P. aeruginosa which is highly hydrophilic ($23.07^{\circ}$ of contact angle) showed the least adhesion characteristic among six model bacteria. After applying a pressure of 800 psi to the sample, Rhodobacter sp. was found to show the highest reduction rate; with 59-73% of the cells removed from the membrane under pressure. P. fluorescens on the other hand analyzed as the most pressure resistant bacteria among six model bacteria. The difference between reduction rates using direct counting and plate counting indicates that the viability of each model bacteria was affected significantly from the high pressure. Most cells subjected to high pressure were unable to form colonies even thought they maintained their structural integrity.

Thermal Resistance Characteristics and Fin-Layout Structure Optimization by Gate Contact Area of FinFET and GAAFET (FinFET 및 GAAFET의 게이트 접촉면적에 의한 열저항 특성과 Fin-Layout 구조 최적화)

  • Cho, Jaewoong;Kim, Taeyong;Choi, Jiwon;Cui, Ziyang;Xin, Dongxu;Yi, Junsin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.5
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    • pp.296-300
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    • 2021
  • The performance of devices has been improved with fine processes from planar to three-dimensional transistors (e.g., FinFET, NWFET, and MBCFET). There are some problems such as a short channel effect or a self-heating effect occur due to the reduction of the gate-channel length by miniaturization. To solve these problems, we compare and analyze the electrical and thermal characteristics of FinFET and GAAFET devices that are currently used and expected to be further developed in the future. In addition, the optimal structure according to the Fin shape was investigated. GAAFET is a suitable device for use in a smaller scale process than the currently used, because it shows superior electrical and thermal resistance characteristics compared to FinFET. Since there are pros and cons in process difficulty and device characteristics depending on the channel formation structure of GAAFET, we expect a mass-production of fine processes over 5 nm through structural optimization is feasible.

Fundamentals of Contact Lens Movement (콘택트렌즈 운동의 기초)

  • Kim, Dae Soo
    • Journal of Korean Ophthalmic Optics Society
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    • v.13 no.1
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    • pp.5-13
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    • 2008
  • Purpose: This review article was written to investigate what kind of forces are acting on the contact lens fitted on the cornea and its subsequent motion. Methods: A capillary action-induced force develops in the tear layer between the lens and cornea, which leads to the restoring force due to difference in layer thickness according to lens rotation. The characteristics of the lens movement can be determined by the various factors such as friction between eyelid and lens, acceleration force based on blinking and the restoring force incorporated with the viscous damping force. A mathematical model which consists of the differential equations and their numerical solution was proposed to analyze the damped motion of lenses. The model predicts the time dependence of lenses during and after the blink varying the BC, blink period and eyelid pressure. Results: It was found that both the blink period and lid pressure increases the movement increases because of the enhanced lid friction. As the BC increases the viscous damping reduces due to the lacrimal layer's increase which resulted in the enhanced lens motion. After blink the lens illustrates the damped oscillation because of the restoring force by the increased lacrimal layer thickness and reduced viscous resistance. The time for the lens to return to the equilibrium shortens as the BC increase because of the resistance reduction. Conclusions: The movement of the contact lens is governed by the characteristics of the lacrimal layer between the lens and cornea as well as the lid blink.

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Performance Evaluation of Magnesium Bipolar Plate in Lightweight PEM Fuel Cell Stack for UAV (무인기용 경량 PEM 연료전지 스택용 마그네슘 분리판의 성능평가)

  • Park, To-Soon;Oh, Ji-Hyun;Ryu, Tae-Kyu;Kwon, Se-Jin
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.41 no.10
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    • pp.788-795
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    • 2013
  • A magnesium bipolar plate whose surface was protected by thinly deposited silver layer was investigated as an alternative to existing graphite bipolar plate of PEM fuel cells. Thin silver layer of $3{\mu}m$ was deposited on a magnesium alloy substrate by physical vapor deposition (PVD) method in an environment of $180^{\circ}C$. A number of tests were conducted on the fabricated magnesium based bipolar plates to determine their suitability for use in PEM fuel cell stacks. The test on corrosion resistance in the same pH condition as in a PEM operation demonstrated the layer protected the magnesium alloy substrate, while unprotected substrate suffered from severe corrosion. The contact resistance of the fabricated bipolar plate was less than $20m{\Omega}-cm^2$ which was superior to the conventional bipolar plates. A single cell was constructed using the fabricated bipolar plates and power output was measured. Due to the enhanced conductivity caused by low contact resistance, slight increase was observed in current density and output voltage. With low density of the magnesium substrate and ease on machining, the weight reduction of the stack of 30~40 % is possible to produce the same power output.