Thermal Resistance Characteristics and Fin-Layout Structure Optimization by Gate Contact Area of FinFET and GAAFET |
Cho, Jaewoong
(Department of Electrical and Computer Engineering, Sungkyunkwan University)
Kim, Taeyong (Department of Electrical and Computer Engineering, Sungkyunkwan University) Choi, Jiwon (Department of Electrical and Computer Engineering, Sungkyunkwan University) Cui, Ziyang (Department of Electrical and Computer Engineering, Sungkyunkwan University) Xin, Dongxu (Department of Electrical and Computer Engineering, Sungkyunkwan University) Yi, Junsin (College of Information and Communication Engineering, Sungkyunkwan University) |
1 | G. Bae, D. I. Bae, M. Kang, S. M. Hwang, S. S. Kim, B. Seo, T. Y. Kwon, T. J. Lee, C. Moon, Y. M. Choi, K. Oikawa, S. Masuoka, K. Y. Chun, S. H. Park, H. J. Shin, J. C. Kim, K. K. Bhuwalka, D. H. Kim, W. J. Kim, J. Yoo, H. Y. Jeon, M. S. Yang, S. J. Chung, D. Kim, B. H. Ham, K. J. Park, W. D. Kim, S. H. Park, G. Song, Y. H. Kim, M. S. Kang, K. H. Hwang, C. H. Park, J. H. Lee, D. W. Kim, S. M. Jung, and H. K. Kang, Proc. 2018 IEEE International Electron Devices Meeting (IEDM) (IEEE, San Francisco, USA, 2018) p. 28.7.1. [DOI: https://doi.org/10.1109/IEDM.2018.8614629] DOI |
2 | S. Barraud, V. Lapras, B. Previtali, M. P. Samson, J. Lacord, S. Martinie, M. A. Jaud, S. Athanasiou, F. Triozon, O. Rozeau, J. M. Hartmann, C. Vizioz, C. Comboroure, F. Andrieu, J. C. Barbe, M. Vinet, and T. Ernst, Proc. 2017 IEEE International Electron Devices Meeting (IEDM) (IEEE, San Francisco, USA, 2017) p. 29.2.1. [DOI: https://doi.org/10.1109/IEDM.2017.8268473] DOI |
3 | I. Jain, A. Gupta, T. B. Hook, and A. Dixit, IEEE Trans. Electron Devices., 65, 4238 (2018). [DOI: https://doi.org/10.1109/TED.2018.2863730] DOI |
4 | B. K. Kompala, P. Kushwaha, H. Agarwal, S. Khandelwal, J. P. Duarte, C. Hu, and Y. S. Chauhan, Jpn. J. Appl. Phys., 55, 04ED11 (2016). [DOI: http://doi.org/10.7567/JJAP.55.04ED11] DOI |
5 | T. Song, IEEE Access, 8, 149984 (2020). [DOI: https://doi.org/10.1109/ACCESS.2020.3015596] DOI |
6 | S. Singh and A. Raman, J. Comput. Electron., 17, 967 (2018). [DOI: https://doi.org/10.1007/s10825-018-1166-0] DOI |
7 | A. Veloso, T. Huynh-Bao, P. Matagne, D. Jang, G. Eneman, N. Horiguchi, and J. Ryckaert, Solid-State Electron., 168, 107736 (2020). [DOI: https://doi.org/10.1016/j.sse.2019.107736] DOI |
8 | A. Dasgupta and C. Hu, IEEE Electron Device Lett., 41, 1750 (2020). [DOI: https://doi.org/10.1109/LED.2020.3032390] DOI |
9 | S. Zhang, Proc. 2nd International Conference on Electronic Engineering and Informatics (IOP Publishing Ltd, Lanzhou, China, 2020) p. 012054. [DOI: https://doi.org/10.1088/1742-6596/1617/1/012054] DOI |
10 | S. Dey, J. Jena, E. Mohapatra, T. P. Dash, S. Das, and C. K. Maiti, Phys. Scr., 95, 014001 (2019). [DOI: https://doi.org/10.1088/1402-4896/ab4621] DOI |
11 | M. Khaouani and A. Guen-Bouazza, Int. J. Electr. Comput. Eng., 7, 1899 (2017). [DOI: https://doi.org/10.11591/ijece.v7i4.pp1899-1905] DOI |
12 | M. Karner, O. Baumgartner, Z. Stanojevic, F. Schanovsky, G. Strof, C. Kernstock, H. W. Karner, G. Rzepa, and T. Grasser, Proc. 2016 IEEE International Electron Devices Meeting (IEDM) (IEEE, San Francisco, USA, 2016) p. 30.7.1. [DOI: https://doi.org/10.1109/IEDM.2016.7838516] DOI |
13 | T. Song, W. Rim, H. Kim, K. H. Cho, T. Kim, T. Lee, G. Bae, D. W. Kim, S. D. Kwon, S. Baek, J. Jung, J. Kye, H. Jung, H. Kim, S. M. Jung, and J. Park, Proc. 2021 IEEE International Solid- State Circuits Conference (ISSCC) (IEEE, San Francisco, USA, 2021) p. 338. [DOI: https://doi.org/10.1109/ISSCC42613.2021.9365988] DOI |
14 | T. N. Theis and H.S.P. Wong, Comput. Sci. Eng., 19, 41 (2017). [DOI: https://doi.org/10.1109/MCSE.2017.29] DOI |
15 | E. P. DeBenedictis, Computer, 50, 72 (2017). [DOI: https://doi.org/10.1109/MC.2017.34] DOI |
16 | U. K. Das and T. K. Bhattacharyya, IEEE Trans. Electron Devices, 67, 2633 (2020). [DOI: https://doi.org/10.1109/TED.2020.2987139] DOI |
17 | S. H. Joung and S. Y. Kim, Proc. 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (IEEE, Udine, Italy, 2019) p. 1. [DOI: https://doi.org/10.1109/SISPAD.2019.8870498] DOI |
18 | I. Myeong, D. Son, H. Kim, M. Kang, and H. Shin, J. Semicond. Technol. Sci., 17, 685 (2017). [DOI: https://doi.org/10.5573/JSTS.2017.17.5.685] DOI |
19 | F. Ahmed, R. Paul, and J. K. Saha, Proc. 2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP) (IEEE, Sumy, Ukraine, 2020) p. 01TPNS04-1. [DOI: https://doi.org/10.1109/NAP51477.2020.9309688] DOI |