• 제목/요약/키워드: conductivity/resistivity

검색결과 390건 처리시간 0.023초

Optimum Combination of Thermoplastic Formability and Electrical Conductivity in Al-Ni-Y Metallic Glass

  • Na, Min Young;Park, Sung Hyun;Kim, Kang Cheol;Kim, Won Tae;Kim, Do Hyang
    • Metals and materials international
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    • 제24권6호
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    • pp.1256-1261
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    • 2018
  • Both thermoplastic formability and electrical conductivity of Al-Ni-Y metallic glass with 12 different compositions have been investigated in the present study with an aim to apply as a functional material, i.e. as a binder of Ag powders in Ag paste for silicon solar cell. The thermoplastic formability is basically influenced by thermal stability and fragility of supercooled liquid which can be reflected by the temperature range for the supercooled liquid region (${\Delta}T_x$) and the difference in specific heat between the frozen glass state and the supercooled liquid state (${\Delta}C_p$). The measured ${\Delta}T_x$ and ${\Delta}C_p$ values show a strong composition dependence. However, the composition showing the highest ${\Delta}T_x$ and ${\Delta}C_p$ does not correspond to the composition with the highest amount of Ni and Y. It is considered that higher ${\Delta}T_x$ and ${\Delta}C_p$ may be related to enhancement of icosahedral SRO near $T_g$ during cooling. On the other hand, electrical resistivity varies with the change of Al contents as well as with the change of the volume fraction of each phase after crystallization. The composition range with the optimum combination of thermoplastic formability and electrical conductivity in Al-Ni-Y system located inside the composition triangle whose vertices compositions are $Al_{87}Ni_3Y_{10}$, $Al_{85}Ni_5Y_{10}$, and $Al_{86}Ni_5Y_9$.

Characteristics of Photoresist-derived Carbon Nanofibers for Li-ion Full Cell Electrode

  • Kim, Hwan-Jun;Joo, Young-Hee;Lee, Sang-Min;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제15권5호
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    • pp.265-269
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    • 2014
  • Carbon nanofiber electrode has been fabricated for energy storage systems by the electrospinning of SU-8 precursor and subsequent pyrolysis. Various parameters including the applied voltage, the distance between syringe tip and target collector and the flow rate of the polymer affect the diameter of SU-8 electrospun nanofibers. Shrinkage during pyrolysis decreases the fiber diameter. As the pyrolysis temperature increases, the resistivity decreases dramatically. Low resistivity is one of the important characteristics of the electrodes of an energy storage device. Given the advantages of carbon nanofibers having high external surface area, electrical conductivity, and lithium intercalation ability, SU-8 derived carbon nanofibers were applied to the anode of a full lithium ion cell. In this paper, we studied the physical properties of carbon fiber electrode by scanning transmission microscopy, thermal gravimetric analysis, and four-point probe. The electrochemical characteristics of the electrode were investigated by cyclic voltammogram and electrochemical impedance spectroscopy plots.

Structural, electrical and optical properties of Al-doped ZnO thin films by pulsed DC magnetron sputtering

  • Ko, Hyung-Duk;Lee, Choong-Sun;Kim, Ki-Chul;Lee, Jae-Seok;Tai, Weon-Pil;Suh, Su-Jeong;Kim, Young-Sung
    • 한국결정성장학회지
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    • 제14권4호
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    • pp.145-150
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    • 2004
  • We have investigated the structural, electrical and optical properties of Al-doped ZnO (AZO) thin films grown on glass substrate by pulsed DC magnetron sputtering as functions of pulse frequency and substrate temperature. A highly c-axis oriented AZO thin film is grown in perpendicular to the substrate when pulse frequency of 30 kHz and substrate temperature of $400^{\circ}C$ was applied. Under this optimized growth condition, the resistivity of AZO thin films exhibited $7.40\times 10^{-4}\Omega \textrm{cm}$. This indicated that the decrease of film resistivity resulted from the improvement of film crystallinity. The optical transmittance spectra of the films showed a very high transmittance of 85∼90 % in the visible wavelength region and exhibited the absorption edge of about 350 nm. The results show the potential application for transparent conductivity oxide (TCO) thin films.

마이크로웨이브 magnetron sputtering법으로 제막된 ZnO:Al 박막의 전기광학적 특성 (Electrical and optical properties of ZnO:Al thin films prepared by microwave magnetron sputtering)

  • 유병석;오근호
    • 한국결정성장학회지
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    • 제8권4호
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    • pp.587-591
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    • 1998
  • 마이크로 웨이브를 보조 여기원으로 사용한 직류 magnetron 스퍼터링법으로 Aluminum이 2wt% 포함되어 있는 Zn:Al 합금타겟을 사용하여 AZO(Aluminum doped zinc oxide) 투명 전도막을 제막하였고 그 영향을 조사하였다. 타겟인가 전압이 420V에서 증착된 막의 투과율, 비저항 그리고 증착속도는 각각 50~70%, $5.5{\times}10^{-3}{\Omega}$cm 그리고 6,000$\AA\textrm{mm}^2$/J 이었다. 이 막을 40$0^{\circ}C$에서 30분간의 열처리하면 광투과율은 80% 이상으로 열처리전에 비해 향상되었으며 전도도는 2배 이상 향상되어 비저항값이 $2.0{\times}10^{-3}{\Omega}$cm인 막을 얻을 수 있었다.

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RF스퍼터링법으로 제작한 ZnO박막의 특성평가 (The Properties Characterization of ZnO Thin Film Grown by RF Sputtering)

  • 정세민;정광천;최유신;김도영;김철수;이준신
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1433-1435
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    • 1997
  • ZnO shows the properties of wide conductivity variation, high optical transmittance, and excellent piezoelectricity. Using these properties of ZnO, the material applications were extended to sensors, SAW filters, solar cells, and display devices. This paper investigated transmittance influencing factors for thin film ZnO grown by RF magnetron sputtering. The growth rate and structural investigation were carried out in conjunction with optical transmittance characteristics of thin film ZnO. The glass substrate temperature of $175^{\circ}C$ exhibited a preferential crystallization along (002) orientation. Transmittance of ZnO film deposited at the substrate temperature of $175^{\circ}C$ showed higher than 92%. An active sputter gas was investigated with a variation of $O_2$ partial pressure from 0 to 10% in an Ar atmosphere. ZnO film grown in 100% Ar gas shows that a reduced transmittance of 82% at the short wavelengths and decreased resistivity value. As the partial pressure of $O_2$ gas increased, the optical transmittance was increased above 90% at the short wavelengths, however, resistivity was drastically increased to higher than $10^4{\Omega}$-cm.

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이규화몰리브덴 고온발열체의 전기적 특성 및 제조에 관한 연구 (The Electric Properties And Fabrication of High Temperature Heating Elements of $MoSi_2$)

  • 이후인;심건주;한상옥
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.605-608
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    • 2001
  • Molybdenum disilicide is widely used for manufacturing high-temperature heating elements owing to its low electrical resistivity, good thermal conductivity, and ability to withstand oxidation at high temperatures. MoSi$_2$heating elements with 4-5wt% of montmorillonite type bentonite as plasticzer and a small amount of Si$_3$N$_4$, ThO$_2$, and B as additives was manufactured. Extruded rods of 3.7mmø and 6.7mmø diameter and 400mm long were fabricated using a vacuum extruder, which were then sinrered for 4-5 hrs. at the max. temperrature of 140$0^{\circ}C$. After 10 minute's oxidation treatment, the diameter of the rod is reduced. The heating elements thus prepared was stable at 1$700^{\circ}C$ and the physical properties such as specific electrical resistivity, hardness, apparent densisty, thermal expansion coefficient, and bending strength were almost identical with thoes of commercial heating elements. In this study we have tried to gain the practical knowledge of manufacturing MoSi$_2$heating elements so that it may be utilized later in a research of pilot scale and eventually be transferred to industry.

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Properties of Aluminum Doped Zinc Oxide Thin Film Prepared by Sol-gel Process

  • Yi, Sung-Hak;Kim, Jin-Yeol;Jung, Woo-Gwang
    • 한국재료학회지
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    • 제20권7호
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    • pp.351-355
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    • 2010
  • Transparent conducting aluminum-doped ZnO thin films were deposited using a sol-gel process. In this study, the important deposition parameters were investigated thoroughly to determine the appropriate procedures to grow large area thin films with low resistivity and high transparency at low cost for device applications. The doping concentration of aluminum was adjusted in a range from 1 to 4 mol% by controlling the precursor concentration. The annealing temperatures for the pre-heat treatment and post-heat treatment was $250^{\circ}C$ and 400-$600^{\circ}C$, respectively. The SEM images show that Al doped and undoped ZnO films were quite uniform and compact. The XRD pattern shows that the Al doped ZnO film has poorer crystallinity than the undoped films. The crystal quality of Al doped ZnO films was improved with an increase of the annealing temperature to $600^{\circ}C$. Although the structure of the aluminum doped ZnO films did not have a preferred orientation along the (002) plane, these films had high transmittance (> 87%) in the visible region. The absorption edge was observed at approximately 370 nm, and the absorption wavelength showed a blue-shift with increasing doping concentration. The ZnO films annealed at $500^{\circ}C$ showed the lowest resistivity at 1 mol% Al doping.

Transparent Conducting Multilayer Electrode (GTO/Ag/GTO) Prepared by Radio-Frequency Sputtering for Organic Photovoltaic's Cells

  • Pandey, Rina;Kim, Jung Hyuk;Hwang, Do Kyung;Choi, Won Kook
    • 센서학회지
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    • 제24권4호
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    • pp.219-223
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    • 2015
  • Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films were carefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effect measurements show a strong influence on the conductivity type where it changed from n-type to p-type at $700^{\circ}C$. GTO/Ag/GTO multilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the visible range (${\lambda}$ = 380~770 nm) and quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$. The resultant power conversion efficiency of 2.60% of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

Synthesis and Properties of Polyimide Composites Containing Graphene Oxide Via In-Situ Polymerization

  • Zhu, Jiadeng;Lee, Cheol-Ho;Joh, Han-Ik;Kim, Hwan Chul;Lee, Sungho
    • Carbon letters
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    • 제13권4호
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    • pp.230-235
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    • 2012
  • In this study, reduced graphene oxide/polyimide (r-GO/PI) composite films, which showed significant enhancement in their electrical conductivity, were successfully fabricated. GO was prepared from graphite using a modified Hummers method. The GO was used as a nanofiller material for the preparation of r-GO/PI composites by in-situ polymerization. An addition of 20 wt% of GO led to a significant decrease in the volume resistivity of composite films by less than nine orders of magnitude compared to that of pure PI films due to the electrical percolation networks of reduced GO created during imidization within the films. A tensile test indicated that the Young's modulus of the r-GO/PI composite film containing 20 wt% GO increased drastically from 2.3 GPa to 4.4 GPa, which was an improvement of approximately 84% compared to that of pure PI film. In addition, the corresponding tensile strength was found to have decreased only by 12%, from 113 MPa to 99 MPa.

전력 트랜지스터의 특성에 미치는 다이아몬드상 카본 passivation 막의 효과 (Effect of diamond-like carbon film as passivation layer on characteristics of power transistor)

  • 박정호;임대순;정석구;장훈;신종한
    • 전자공학회논문지A
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    • 제33A권11호
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    • pp.97-104
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    • 1996
  • Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductance, diamond-like carbon (DLC) film is a suitable materials for the passivation layers. For this purpose, DLC films are synthesized under various conditions and are characterized. Adhesive stregth is excellent and increased with the increase of the hydrogen gas flow rate. The resistivity of approximately 5.3X10$^{8}{\Omega}{\cdot}cm$ is measured by automatic spreading resistance probe analysis method. The thermal conductivity of DLC films is superior to that of PSG oxide and improved by increasing the hydrogen gas flow rate. The patterning techniques of the DLC films is developed using the lift-off and RIE methods to form 5${\mu}$m line. Finally, power transistor with the DLC film as passivation layer is fabricated and analyzed. The test result shows the improsved long-term stability and higher breakdown voltage.

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