• Bulletin of the Korean Chemical Society
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• v.15 no.6
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• pp.465-468
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• 1994

The charge transfer compounds $(TTF)_4FeCl_3{\cdot}CH_3OH,\;(TTF)_4SbCl_4\;and\;(TTF)_5(SbBr_4)_2{\cdot}CH_3COCH_3$ were prepared from reactions of the TTF (tetrathiafulvalene) and metal halides. The compounds were characterized by spectroscopic (UV,IR, EPR and XPS) methods, magnetic susceptibility and electrical conductivity measurements. The d.c electrical conductivities of the pressed pellets are in the order of $10^{-1}-10^{-3} Scm^{-1}$, which lies in the range of semiconductor region at room temperature. It means that the partially ionized TTF has stacked in low-dimensional chain in each compound. Spectroscopic properties also indicate that TTF molecules are partially ionized and charge transfer has occurred from (TTF)n to Fe(III) center in $(TTF)_4FeCl_3{\cdot}CH_3OH$ whereas to the $-SbX_4^-$ entity in $(TTF)_4SbCl_4\;and\;(TTF)_5(SbBr_4)_2{\cdot}CH_3COCH_3$. The EPR g values are consistent with TTF radical formation and EPR linewidths suggest the delocalization of unpaired electrons along TTF stacks. A signal arised from metal (Fe and Sb) ions were not detected in EPR spectra, indicating that metal ion is in the diamagnetic state in each compound. The diamagnetic state was also examined by the magnetic susceptibility measurement. The magnetic properties reveal the significant interaction between the $TTF^+$ radical cations in the stacks. The oxidation state of metal ions was also investigated by XPS spectra.

• Korean Journal of Materials Research
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• v.28 no.12
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• pp.748-757
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• 2018

Inorganic semiconductor compounds, e.g., CIGS and CZTS, are promising materials for thin film solar cells because of their high light absorption coefficient and stability. Research on thin film solar cells using this compound has made remarkable progress in the last two decades. Vacuum-based processes, e.g., co-evaporation and sputtering, are well established to obtain high-efficiency CIGS and/or CZTS thin film solar cells with over 20 % of power conversion. However, because the vacuum-based processes need high cost equipment, they pose technological barriers to producing low-cost and large area photovoltaic cells. Recently, non-vacuum based processes, for example the solution/nanoparticle precursor process, the electrodeposition method, or the polymer-capped precursors process, have been intensively studied to reduce capital expenditure. Lately, over 17 % of energy conversion efficiency has been reported by solution precursors methods in CIGS solar cells. This article reviews the status of non-vacuum techniques that are used to fabricate CIGS and CZTS thin films solar cells.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.99-105
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• 2011

Lead titanate ($PbTiO_3$) powder was prepared from lead nitrate ($Pb(NO_3)_2$) and titania ($TiO_2$) by hydrothermal route. Phase formation process was investigated by observing the phases formed in various experimental conditions like different KOH concentration, reaction temperature and time. $PbTiO_3$ powder was fabricated when the KOH concentration was 0.8M or higher. An intermediate compound, $PbTi_{0.8}O_{2.6}$, was formed at first by a reaction between PbO and $TiO_2$ and changed into $PbTiO_3$ powder with a perovskite crystal structure. A $PbTiO_3$ phase was formed in a shorter time when a KOH concentration was increased from 0.8M to 8M because a driving force for a $PbTiO_3$ formation was increased due to an increase in a degree of supersaturation. And $TiO_2$ (rutile) and $3PbO{\cdot}H_2O$ were observed at room temperature in a 0.8M KOH solution and $TiO_2$(rutile) and PbO (litharge) in a 8M KOH. A $PbTiO_3$phase was also formed in a shorter time at a higher reaction temperature as a reaction temperature influenced the rates for a dissolution and a precipitation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.176-176
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• 2007

Flat-panel direct conversion detectors used in compound substance of semiconductor are being studied for digital x-ray imaging. Recently, such detectors are deposited by physical vapor deposition(PVD) generally. But, most of materials (HgI2, PbI2, TlBr, PbO) deposited by PVD have shown difficult fabrication and instability for large area x-ray imaging. Consequently, in this paper, we propose applicable potentialities for screen printing method that is coated on a substrate easily. It is compared to electrical properties among semiconductors such as $HgI_2$, $PbI_2$, PbO, HgBrI, InI, and $TlPbI_3$ under investigation for direct conversion detectors. Each film detector consists of an ~25 to $35\;{\mu}m$ thick layer of semiconductor and was coated onto the substrate. Substrates of $2cm{\times}2cm$ have been used to evaluate performance of semiconductor radiation detectors. Dark current, sensitivity and physics properties were measured. Leakage current of $HgI_2$ as low as $9pA/mm^2$ at the operation bias voltage of ${\sim}1V/{\mu}m$ was observed. Such a value is not better than PVD process, but it is easy to be fabricated in high quality for large area x-ray Imaging. Our future efforts will concentrate on optimization of growth of film thickness that is coated onto a-Si TFT array.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.57-67
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• 2022

The curing characteristics of naphthalene type epoxy resin systems according to the change of curing agent were investigated to develop a new next-generation EMC(Epoxy Molding Compound) with excellent warpage characteristics, low thermal expansion, and excellent fluidity for WLP(Wafer Level Package). As epoxy resins, DGEBA, which are representative bisphenol type epoxy resins, NE-16, which are the base resins of naphthalene type epoxy resins, and NET-OH, NET-MA, and NET-Epoxy resins newly synthesized based on NE-16 were used. As a curing agent, DDM (Diamino Diphenyl Methane) and CBN resin with naphthalene moiety were used. The curing reaction characteristics of these epoxy resin systems with curing agents were analyzed through thermal analysis experiments. In terms of curing reaction mechanism, DGEBA and NET-OH resin systems follow the nth curing reaction mechanism, and NE-16, NET-MA and NET-Epoxy resin systems follow the autocatalytic curing reaction mechanism in the case of epoxy resin systems using DDM as curing agent. On the other hand, it was found that all of them showed the nth curing reaction mechanism in the case of epoxy resin systems using CBN as the curing agent. Comparing the curing reaction rate, the epoxy resin systems using CBN as the curing agent showed a faster curing reaction rate than them with DDM as a hardener in the case of DGEBA and NET-OH epoxy resin systems following the same nth curing reaction mechanism, and the epoxy resin systems with a different curing mechanism using CBN as a curing agent showed a faster curing reaction rate than DDM hardener systems except for the NE-16 epoxy resin system. These reasons were comparatively explained using the reaction rate parameters obtained through thermal analysis experiments. Based on these results, low thermal expansion, warpage reduction, and curing reaction rate in the epoxy resin systems can be improved by using CBN curing agent with a naphthalene moiety.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.37-44
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• 2000

The corrosion behavior of aluminum pad coated with epoxy molding compound (EMC) was investigated using electrochemical impedance spectroscopy (EIS). The impedance change was evaluated by the absorption of deionized water (DI water) to EMC coating and the interface between EMC and aluminum. During the absorption a decrease in resistance and thus an increase in capacitance of EMC as well as the interface of EMC/Al could be observed. Up to about 170 hours of absorption the EMC was saturated with the water molecules and ions generated from EMC. Subsequently the ionic water was penetrated to the interface and finally the corrosion of aluminum was occurred by the Dl water and ions. From measuring the adhesion strength with the Dl water absorption it was expected that the saturation of water and ions in the interface decreased the adhesion strength. The higher filler content of EMC should be necessary to inhibit the corrosion of aluminum electrode in microelectronic packages.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1555-1557
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• 2004

The Pt-doped $SnO_2$ thin film for CO sensor applications obtained by RF sputtering from a target of the same compound in an Ar-$O_2$ atmosphere. Pt-SnO2-SiC Schottky diode detection of CO gas Cause the remarkable change in electrical resistivity of the semiconductor. the good gas sensitivity is shown when annealing condition is 600$^{\circ}C$, 1hr in RTP and detected temperature is 350$^{\circ}C$.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.4
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• pp.629-634
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• 2013

This study aims to investigate a new structure for a concentrating photovoltaic (PV) module using a III-V compound semiconductor solar cellto solve the problems of existing concentrating PV modules and to explore a concentrating optical system with a flat structure, which shows remarkable advantages in terms of manufacturing cost, installation, and maintenance. This study should greatly contribute toward the development of concentrating PV modules. This study was performed to achieve an improvement in efficiency and economy and to implement an actual product. A new source of renewable energy is the only way in which countries that cannot produce oil can even emerge as an energy power. Therefore, this work can serve as a fundamental study that will help South Korea grow into a country that is a PV power generation force.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.666-666
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• 2013

CIGS solar cell에서 p-type semiconductor역할을 수행하는 Cu(In,Ga)Se로 이루어진 Absorber layer는 4 element multi binary compound로 stoichiometry 측면에서 다양한 형태가 나타나기 때문에 태양전지 효율을 향상시키기 위해 이에 대한 연구가 활발하다. 우리는 E-beam evaporation 방법으로 다양한 조건의 multi layer로 증착된 CIG layer 위에 일정 두께의 Se을 증착하면서 열처리 조건에 따른 Selenization 메커니즘에 대한 연구를 수행하였다. 결과분석을 위해(in-situ High Temperature) XRD, XPS, Micro Raman spectroscopy, FE-SEM, (Nano Indentor, Atomic Force Microscopy) 등을 이용하여 결정구조, 결정화도, Depth profile, Eg (band gap energy) 등을 알아보고 분석결과간의 상관관계를 고찰하였다.

• Journal of the Korean Applied Science and Technology
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• v.24 no.3
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• pp.309-318
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• 2007

Novolac is widely used as the primary solid component of most photoresists in semiconductor and microelectronic devices. In this study, novolac resins were prepared by condensation of 35% formaldehyde with phenolic compounds such as m-/p-cresol, 2,5-dimethylphenol and bisphenol A in the presence of oxalic acid as catalyst. The average molecular weight $(M_w)$ of these novolac resins has been varied on the changing of mixing ratio of m-/p-cresol/2,5-dimethylphenol/bisphenol A or formaldehyde/phenolic compound. Also, thermal properties of novolac were observed by TGA.