• Journal of Korean Ophthalmic Optics Society
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• v.15 no.4
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• pp.313-317
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• 2010

Purpose: The purpose of this study was to investigate the surface characteristics of plasma electrolytic oxidation (PEO) surface treatment on AZ31 magnesium alloy eyeglass frames. Methods: The plasma electrolytic oxidation (PEO) surface was created by varying the DC voltage. The oxidation layer of coating was measured using phase analysis by X-ray diffraction. The microstructural morphology was observed using a scanning electron microscopy. Coating layer and the concentration of elements were investigated using the energy dispersive X-ray spectra. Results: The MgO XRD peak was increased as the voltage increased, and the density of the surface oxide film was also increased. The changes in the composition of the EDS also showed a good agreement. Conclusions: The compound oxide crystallization of PEO oxide film layer was done by increasing formation of MgO as the voltage increased. The treatment at 65V and 60 sec showed the best results at surface state, contact angles and salt spray test.

• Korean Journal of Medicinal Crop Science
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• v.20 no.3
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• pp.159-164
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• 2012

In this study, we investigated the antibacterial activity, antioxidative activity and whitening effect of 75% ethanol extracts from different parts of Prunus sargentii. The total phenolic compound content of the branch extract was 277.92 mg/g as the highest level. In the measurement of DPPH radical scavenging ability, $SC_{50}$ values of the cork layer and branch extract were 26.79 ${\mu}g/m{\ell}$ and 30.13 ${\mu}g/m{\ell}$. In nitric oxide (NO) scavenging ability, $SC_{50}$ values of the branch and leaf extract were 49.19 ${\mu}g/m{\ell}$ and 55.55 ${\mu}g/m{\ell}$. All extracts exhibited higher NO scavenging ability than ascorbic acid used as positive control. On the other hand, in antibacterial activity against Staphylococcus epidermidis and Staphylococcus aureus by disc diffusion assay, the pure bark extract showed the highest activity. Moreover, tyrosinase inhibitory activity of cork layer, pure bark and branch extracts showed higher activity than arbutin used as positive control. In the cytotoxicity measurement by MTT assay, leaf extract was exhibited Raw 264.7 cell viabilities of 44.68~61.83% as cytotoxic result in tested concentration. In conclusion, the branch extract of Prunus sargentii will be a functional materials without damage compared to other parts such as pure bark or cork layer in the plant.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.688-695
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• 2004

The capacitor contact barrier(CCB) layers have been introduced in the FeRAM integration to prevent the Pt/Al reaction during the back-end processes. Therefore, the interdiffusion and intermetallic formation in $Pt(1500{\AA})/Al(3000{\AA})$ film stacks were investigated over the annealing temperature range of $100\sim500^{\circ}C$. The interdiffusion in Pt/Al interface started at $300^{\circ}C$ and the stack was completlely intermixed after annealing over $400^{\circ}C$ in nitrogen ambient for 1 hour. Both XRD and SBM analyses revealed that the Pt/Al interdiffusion formed a single phase of $RtAl_2$ intermetallic compound. On the other hand, in the presence of TiN($1000{\AA}$) barrier layer at the Pt/Al interface, the intermetallic formation was completely suppressed even after the annealing at $500^{\circ}C$. These were in good agreement with the predicted effect of the TiN diffusion barrier layer. But the conventional TiN CCB layer could not perfectly block the Pt/Al reaction during the back-end processes of the FeRAM integration with the maximum annealing temperature of $420^{\circ}C$. The difference in the TiN barrier properties could be explained by the voids generated on the Pt electrode surface during the integration. The voids were acted as the starting point of the Pt/Al reaction in real FeRAM structure.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.3
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• pp.9-18
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• 1999

In this study, Metallugical properties between Sn-3.5Ag, Sn-37Pb eutectic solders and Au/Ni/cu substrate according to time span above the melting point were investigated. A conventional reflow soldering machine wert used for this study and time span above the melting point was determined by changing peak soldering temperature and conveyor speed. As results, scallop type intermetallic compounds of $Ni_3Sn_4$ were formed at joint interface and no Cu-Sn compounds were found at all; Ni layer performed as a barrier for Cu diffusion. As the peak soldering temperature increased, thickness of the intermetallic compound layer increased; maximum thickness of the scallop-layer was 2.2$\mu\textrm{m}$. The shape of scallops were transformed from hemi-sphere type to elliptical shape with smaller size. Micro-hardness of the solder joint decreased as the eutectic structure of Sn-3.5Ag and Sn-37Pb increased.

• Journal of Welding and Joining
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• v.32 no.3
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• pp.60-67
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• 2014

The ability of electronic packages and assemblies to resist solder joint failure is becoming a growing concern. This paper reports on a study of high speed shear energy of Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder with different electroless Ni-P thickness, with $HNO_3$ vapor's status, and with various pre-conditions. A high speed shear testing of solder joints was conducted to find a relationship between the thickness of Ni-P deposit and the brittle fracture in electroless Ni-P deposit/SAC405 solder interconnection. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the fractured pad surface with and without $HNO_3$ vapor treatment. A scanning electron microscopy (SEM) and an energy dispersive x-ray analysis (EDS) confirmed that there were three intermetallic compound (IMC) layers at the SAC405 solder joint interface: $(Ni,Cu)_3Sn_4$ layer, $(Ni,Cu)_2SnP$ layer, and $(Ni,Sn)_3P$ layer. The high speed shear energy of SAC405 solder joint with $3{\mu}m$ Ni-P deposit was found to be lower in pre-condition level#2, compared to that of $6{\mu}m$ Ni-P deposit. Results of focused ion beam and energy dispersive x-ray analysis of the fractured pad surfaces support the suggestion that the brittle fracture of $3{\mu}m$ Ni-P deposit is the result of Ni corrosion in the pre-condition level#2 and the $HNO_3$ vapor treatment.

• Progress in Superconductivity
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• v.3 no.1
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• pp.13-16
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• 2001

We have measured the reflectivity of superconducting infinite-layer compounds $Sr_{0.9}$ $Ln_{0.1}$ Cu $O_2$ (Ln=La, Gd, Sm) with $T_{c}$ : 39 K using a Fourier-transform infrared spectrometer. We have identified the optical phonon modes from their infrared reflectivity and conductivity spectra and have proposed possible displacement patterns. The La- and the Gd-doped compounds exhibited only four ($2A_{2u}$ $+2E_{u}$) out of the five ($2A_{2u}$ $3E_{u}$) infrared-active phonons predicted by a group theoretical analysis whereas the Sm-doped compound exhibited all five modes. For the La-doped sample, we investigated the temperature dependence of the optical response functions in a wide temperature range of 7 - 300 K. In FIR region, the reflectivity is apparently enhanced below ~120 $cm^{-1}$ as temperature decreases across $T_{c}$. The value of $2$\Delta$/k_{B}$ $T_{c}$ is about 4.5, which is consistent with maximum gap value of d-wave $high- T_{c}$ cuprates.> c/ cuprates.uprates.s.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• Corrosion Science and Technology
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• v.7 no.6
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• pp.315-318
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• 2008

The atmospheric corrosion performance of Al-alloying, Si-alloying and Al-Si-alloying steel were studied by wet/dry cyclic corrosion tests (CCT) at $30^{\circ}C$ and 60% relative humidity (RH). The corrosion electrolyte used for CCT was 0.052 wt% $NaHSO_{3}$ (pH~4) solution. The result of gravimetry demonstrated that Al-Si-bearing steels showed lower corrosion resistance than other rusted steels. But the rusted 0.7%Si-alloying steel showed a better corrosion resistance than rusted mild steel. Polarization curves demonstrated that Al-/Si-alloying and Al-Si-alloying improved the rest potential of steel at the initial stage; and accelerated the cathodic reduction and anodic dissolution after a rust layer formed on the surfaces of steels. XRD results showed that Al-Si-alloying decreased the volume fraction of $Fe_{3}O_{4}$ and $\alpha-FeOOH$. The recycle of acid accelerated the corrosion of steel at the initial stage. After the rust layer formed on the steel, the leak of rust destabilized the rust layer due to the dissolution of compound containing Al (such as $FeAl_{2}O_{4}$, $(Fe,\;Si)_{2}(Fe,\;Al)O_{4}$). Al-Si-alloying is hence not suitable for improving the anti-corrosion resistance of steel in industrial atmosphere.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.42 no.6
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• pp.821-832
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• 1997

The aim of this study was to separate or purify some bioactive compounds from flowers of alfalfa(Medicago sativa L.) and to test of the isolated compounds on alfalfa for their autotoxicity and on Echinochloa crus-galli for their allelopathy for seed germination and seedling weight. Using thin layer chromatography(TLC) of $CHCl_3$ extracts, the most inhibitory band to alfalfa seed germination was determined. Germination inhibition of this extract suggested a complex chemical interaction. Separation and purification of compounds with CHCl$_3$ extract of fresh alfalfa flowers were conducted by a silica gel TLC, and microcrystalline cellulose TLC(MCTLC), followed by droplet countercurrent chromatography(DCCC) bioassay. Preliminary identification was done by high perfomance liquid chromatography(HPLC) on the most inhibitory fractions in DCCC. Ferulic acid, caffeic acid, vanillic acid, rutin, narringin were identified in fraction 5 and ferulic acid, caffeic acid, vanillic acid, rutin, coumarin in fraction 6. The phytotoxicity of their individual compound was tested on alfalfa and Echinochloa crus-galli seed germination and seedling weight. Coumarin and ferulic acid showed the most inhibitory effect on alfalfa seed germination and Echinochloa crus-galli seedling fresh and dry weight. These compounds may be, at least in part, involved in autotoxicity and allelopathy.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.730-736
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• 2008

$TiO_2$ nanotubes fabricated in aqueous HF-based electrolytes have been generally grown only to about 500nm in length because of the strong dissolubility of HF acid. In this paper, ethylene glycol solution has been applied for increasing the length of the anodic $TiO_2$ nanotubes, and the growth behaviors of the nanotubes according to water contents has been investigated. Anodization of Ti in ethylene glycol + 1 wt% $NH_4F$ (EG solution) with water additions up to 10 wt% were carried out at the constant voltage of 20 V. The results show that a thin titanium oxide layer is formed in the initial stage and the nanotube structure grows underneath the initial layer. And the length of $TiO_2$ nanotubes decreases with the increasing water content in the solution. It can be ascribed to the locally acidified circumstance around the barrier layer inside the nanopore due to $H^+$ ion originated from water. The XPS for the nanotubes suggests that the spectra of Ti2p and O1s are the major chemical bonding states of the $TiO_2$, and those for F1s, N1s and C1s come from the compound of $(NH_4)_2TiF_6$.