• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.152-152
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• 2003

Hg$\sub$l-x/Cd$\sub$x/Te (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590$^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was 5 $\mu\textrm{m}$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment The photoconductor characterization for the epilayers was also measured The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1576-1579
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• 2005

With varying rapid thermal annealing (RTA) temperature, luminescence properties of $Zn_{0.75}Mg_{0.25}S:Mn$ thin film deposited by RF-magnetron sputtering technique were investigated. In this study, $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor showed more red emission than those of the previous studies when annealed around 600 or $650^{\circ}C$. Although all samples were deposited from identical source composition, a main peak wavelength of photoluminescence spectra of $Zn_{0.75}Mg_{0.25}S:Mn$ shifted toward shorter wavelengths depending upon increase of RTA temperature. The same dependence of wavelength on RTA temperature was also observed in cathodoluminescence as well as electroluminescence measurements. It was revealed that the change of the luminescence properties were originated from structural changes in $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor from cubic to hexagonal phases analyze using conventional X-ray pole figure mapping. The phase transition would be the origin of luminescence property changes with respect to RTA temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.362.1-362.1
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• 2016

InAs nanowires were synthesized by a vapor-liquid-solid method with InAs powder. The composition and crystalline structure of nanowires were confirmed by energy-dispersive spectroscopy (EDS) and high resolution transmission electron microscopy (HRTEM), respectively. The thermal conduction of nanowires was investigated by the optical method using Raman spectroscopy: i.e., the local temperature on nanowire was determined by laser heating. As temperature increased, the Raman peaks are shifted to low frequency and broadened. The temperature dependent Raman scattering experiments was realized on InAs nanowires with different percentages of zinc-blende and wurtzite structure. The temperature dependence on the nanowire structure has been successfully obtained: the phonon scattering was more increased in InAs heretostructure nanowires, compared to the InAs nanowires with homostructure. The result strongly suggests that the thermal conduction can be effectively controlled by ordered interface without any decrease in electrical conduction.

• 한국응용과학기술학회지
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• 제17권2호
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• pp.132-138
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• 2000

Excess enthalpies ($H^{E}$) were measured by isothermal flow calorimetry for the nonionic amphiphile 2-butoxyethanol/water mixtures at 10 different temperatures (48.5 to $70^{\circ}C$) around and above the lower consolute solution temperature, $T_{lc}$. $H^{E}$ exhibits U-shape for the binary mixtures, and is large and negative which reflects substantial interaction between two chemical species. When the commonly used, semi-empirical Redlich-Kister (RK) polynomials were fitted to the measured $H^{E}$, plots of $H^{E}$ vs. weight fraction provided more accurate fitting with fewer parameters than conventionally drawn $H^{E}$ vs. mole fraction plots. This was due to the enhanced symmetry of $H^{E}$ vs. weight fraction plots. Using the fitted Redlich-Kister polynomials and the Gibbs-Helmholtz relation, temperature dependence of the activity coefficients were found and compared to the values determined from vapor-liquid equilibria. The activity coefficients were in the range of one to three, indicating that the binary system deviates from ideality but not substantially. They slightly depended on temperature and the temperature effect was equivalent to 10 % change in the activity coefficients.

• 한국세라믹학회지
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• 제31권11호
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• pp.1337-1345
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• 1994

Glasses in the system of 45CaO-25TiO2-30P2O5 containing 1 mole% of M2O(M=Li, Na, K) were melted and crystallized. And their crystal phases were Ca3(PO4)2, CaTi4(PO4)6, and TiO2. Porous glass-ceramics with skeleton of two crystal phase CaTi4(PO4)6 and TiO2 were prepared by selective leaching of Ca3(PO4)2 with 0.1 N-HCl. Glass transition temperature(Tg) and crystallization temperature(Tc) were decreased by addition of 1 mole% alkali metal oxide. Pore size of porous glass-ceramics was increased with increasing heat treatment temperature and its dependence on heat treatment temperature was decreased with addition of Na2O and K2O. It was found that porous glass-ceramics of parent glass and containing 1mole% M2O(M=Li, Na, K) composition had maximum specific surface area, porosity and maximum of crystallzed phase by heat treatment at 80$0^{\circ}C$, 76$0^{\circ}C$, 78$0^{\circ}C$, 80$0^{\circ}C$ respectively.

• Korea-Australia Rheology Journal
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• 제13권4호
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• pp.189-196
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• 2001

The phase morphology is an important factor in the rheology of immiscible polymer blends. Through its size and shape, the interface between the two phases determines how the components and the interface itself will contribute to the global stresses. Rheological measurements have been used successfully in the past to probe the morphological changes in model blends, particularly for dilute systems. For more concentrated blends only a limited amount of systematic rheological data is available. Here, viscosities and first normal stress differences are presented for a system with nearly Newtonian components, the whole concentration range is covered. The constituent polymers are PDMS and PIB, their viscosity ratio can be changed by varying the temperature. The data reported here have been obtained at 287 K where the viscosities of the two components are identical. By means of relaxation experiments the measured stresses are decomposed into component and interfacial contributions. The concentration dependence is quite different for the two types of contribution. Except for the component contributions to the shear stresses there is no clear indication of the phase inversion. Plotting either the interfacial shear or normal stresses as a function of composition produces in some cases two maxima. The relaxation times of these stresses display a similar concentration dependence. Although the components have the same viscosity, the stress-component curves are not symmetrical with respect to the 50/50 blend. A slight elasticity of one of the components seems to be the cause of this effect. The data for the more concentrated blends at higher shear rates are associated with a fibrillar morphology.

• 대한전자공학회논문지
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• 제27권11호
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• pp.77-82
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• 1990

본 논문에서는 고주파 대역에서의 $xBa(Zn_{1/3}Nb_{2/3})O_{3}\[BZN]-(1-x)\Sr(Zn_{1/3}Nb{2/3)O_{3}\[SZN]$고 용체의 온도 및 mol 비에 따른 유전 특성에 관하여 연구하였다. BZN은 10GHz에서 유전 상수 및 무부하 Q값이 $40.5{\pm}0.5,5980{\pm}100$이며, SZN은 10.2GHz에서 각각 $36.9{\pm}0.5,2700{\pm}100$을 보였다. 또한 공진 주파수의 온도 계수는 각각 $+27.5ppm/{\circ}C$와 $-39.1ppm/{\circ}C$을 나타냈다. x-BZN-(1-x)SZN 고용체에서 온도변화에 가장 안정한 특성을 보인 고용체는 0.3BZN-0.7SZN 고용체이다. 이 고용체의 유전 상수, 무부하 Q값 및 공진 주파수의 온도 계수는 9.8 GHz에서 각각 $41.5{\pm}0.2,2920{\pm}100$ 및 $-3.5ppm/{\circ}C$를 보였다.

• 한국결정성장학회지
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• 제2권1호
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• pp.30-36
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• 1992

$LiNbO_3$단결정의 조성비 변화에 따른 탄성표면파 특성을 축정하기 위해 47-50 $Li_2O$ mol% 조성의 $LiNbO_3$단결정을 성장시켜 $128^{\circ}$Y cut wafer를 제조하였다. 제작된 wafer 위에 사진식각법을 이용하여 지연선(Delay line)을 형성시켰다. Pulse-echo overlap mehtod로 지연시간을 측정하여, 탄성표면파 속도$(V_s)$, 전기기계결합계수$(K_s^2)$ 및 $-50^{\circ}C~100^{\circ}C$ 온도 범위에서 지연시간 온도계수(TCD)의 조성비에 대한 의존성을 조사하였다.

• Metals and materials international
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• 제24권6호
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• pp.1256-1261
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• 2018

Both thermoplastic formability and electrical conductivity of Al-Ni-Y metallic glass with 12 different compositions have been investigated in the present study with an aim to apply as a functional material, i.e. as a binder of Ag powders in Ag paste for silicon solar cell. The thermoplastic formability is basically influenced by thermal stability and fragility of supercooled liquid which can be reflected by the temperature range for the supercooled liquid region (${\Delta}T_x$) and the difference in specific heat between the frozen glass state and the supercooled liquid state (${\Delta}C_p$). The measured ${\Delta}T_x$ and ${\Delta}C_p$ values show a strong composition dependence. However, the composition showing the highest ${\Delta}T_x$ and ${\Delta}C_p$ does not correspond to the composition with the highest amount of Ni and Y. It is considered that higher ${\Delta}T_x$ and ${\Delta}C_p$ may be related to enhancement of icosahedral SRO near $T_g$ during cooling. On the other hand, electrical resistivity varies with the change of Al contents as well as with the change of the volume fraction of each phase after crystallization. The composition range with the optimum combination of thermoplastic formability and electrical conductivity in Al-Ni-Y system located inside the composition triangle whose vertices compositions are $Al_{87}Ni_3Y_{10}$, $Al_{85}Ni_5Y_{10}$, and $Al_{86}Ni_5Y_9$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권11호
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• pp.526-530
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The composition of SCT thin film deposited on Si substrate at room temperature is close to stoichiometry(1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by ammealing at $600^{\cric}C$. The temperature dependence of dielectric loss showed a value within 0.02 in temperature ranges of -80 ${\sim}$ +90$^{\circ}C$. The capacitance characteristics showed a stable value within ${\pm}$4%. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films was observed at the frequency above 200kHz.