• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.9 no.5
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• pp.51-56
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• 1995

The transistors of single phase 3 level PWM Inverter compose output power transistors and neutral point clamping transistors, which are NPN transistors. Waveforms of driving signals for this are PWM waves for power transistors and period operating waves for neutral point clamping transistors, which signals made W-type modulation from rectangular and sine wave. The output power transistors operate at ON-time complementary and neutral point clamping transistors operate at OFF-time complementary respectively. Therefore, each transistors operate in half period at parallel. Characteristics of this inverter circuit is parallel switching method about series switching method of general inverter. As modulation of 3 level drive signals made from full-wave rectifier of sine wave and rectangular wave, which are level wave about 3 level of complementary transistor inverter. So, this circuit composed complementary operation inverter of NPN transistors only compare with PNP-NPN complementary inverter, which have high power 3 level inverter of complementary operation.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.620-621
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• 2008

Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates although in general high voltage operating devices have been mainly studied considering transparent display drivers. However, low voltage operating oxide TFTs with transparent electrodes are very necessary if we are aiming at logic circuit applications, for which transparent complementary or one-type channel inverters are required. The most effective and low power consuming inverter should be a form of complementary p-channel and n-channel transistors but real application of those complementary TFT inverters also requires electrical- and even photo-stabilities. Since p-type oxide TFTs have not been developed yet, we previously adopted organic pentacene TFTs for the p-channel while ZnO TFTs were chosen for n-channel on sputter-deposited $AlO_x$ film. As a result, decent inverting behavior was achieved but some electrical gate instability was unavoidable at the ZnO/$AlO_x$ channel interface. Here, considering such gate instability issues we have designed a unique transparent complementary TFT (CTFTs) inverter structure with top n-ZnO channel and bottom p-pentacene channel based on 12 nm-thin nano-oxide/self assembled monolayer laminated dielectric, which has a large dielectric strength comparable to that of thin film amorphous $Al_2O_3$. Our transparent CTFT inverter well operate under 3 V, demonstrating a maximum voltage gain of ~20, good electrical and even photoelectric stabilities. The device transmittance was over 60 % and this type of transparent inverter has never been reported, to the best of our limited knowledge.

• Journal of Information Display
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• v.12 no.1
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• pp.1-4
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• 2011

A complementary inverter was fabricated using pentacene and N-N -dioctyl-3,4,9,10-perylene tetracarboxylic diimide-C (PTCDI-C8) for p- and n-type transistors on a poly(ether sulfone) substrate, respectively. The mobilities of the p- and n-type transistors were 0.056 and 0.013 $cm^2$/Vs, respectively. The inverter, which was composed of p- and n-type transistors, showed a gain of 48.6 when $V_{DD}$ = -40V and at the maximum noise margin of $V_{DD}$/2. A ring oscillator was also fabricated by cascading five inverters. The five-stage ring oscillator showed the maximum output frequency of 10 kHz when $V_{DD}$ = -170 V.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.2
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• pp.157-163
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• 1990

The PWM inverter investigated in this paper utilizes a bridge type current sharing reactor circuit with tow pairs of complementary transistor at each phase. The driving signals for this inverter are 3 level PWM waves of W type an M type modulation, which are obtained from a microprocessor based on the switching time data obtained by switching position calculation of triangular and sine modulation wave. The output voltage waveforms of this inverter have 5 level phase voltage and 9 level line voltage of PWM. The harmonics of the output voltage are reduced to half when it is compared with single CTI, and the occurrence of harmonics is also reduced.

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.71-75
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• 2019

This paper proposes the extension of the dynamic range in complementary metal oxide semiconductor (CMOS) image sensors (CIS) using switching operation of in-pixel inverter. A CMOS inverter is integrated in each unit pixel of the proposed CIS for switching operations. The n+/p-substrate photodiode junction capacitances are added to each unit pixel. When the output voltage of the photodiode is less than half of the power supply voltage of the CMOS inverter, the output voltage of the CMOS inverter changes from 0 V to the power supply voltage. Hence, the output voltage of the CMOS inverter is adjusted by changing the supply voltage of the CMOS inverter. Thus, the switching point is adjusted according to light intensity when the supply voltage of the CMOS inverter changes. Switching operations are then performed because the CMOS inverter is integrated with in each unit pixel. The proposed CIS is composed of a pixel array, multiplexers, shift registers, and biasing circuits. The size of the proposed pixel is $10{\mu}m{\times}10{\mu}m$. The number of pixels is $150(H){\times}220(V)$. The proposed CIS was fabricated using a $0.18{\mu}m$ 1-poly 6-metal CMOS standard process and its characteristics were experimentally analyzed.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.515-517
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• 1989

This PWM inverter are used bridge circuit of two pair complementary transistor at each phase. The operation signals are 3 level PWM wave of W type and M type modulation, Which were obtained from switching time data by switching position calculation of triangular and sine wave. The output voltage waveforms of this inverter have the 5 level phase voltage and the 9 level line voltage of PWM.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.168-180
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• 2018

In order to achieve the high quality output voltage of single-phase voltage source inverters, in this paper an Adaptive Complementary Sliding Mode Control (ACSMC) is proposed. Firstly, the dynamics model of the single-phase inverter with lumped uncertainty including parameter variations and external disturbances is derived. Then, the conventional Sliding Mode Control (SMC) and Complementary Sliding Mode Control (CSMC) are introduced separately. However, when system parameters vary or external disturbance occurs, the controlling performance such as tracking error, response speed et al. always could not satisfy the requirements based on the SMC and CSMC methods. Consequently, an ACSMC is developed. The ACSMC is composed of a CSMC term, a compensating control term and a filter parameters estimator. The compensating control term is applied to compensate for the system uncertainties, the filter parameters estimator is used for on-line LC parameter estimation by the proposed adaptive law. The adaptive law is derived using the Lyapunov theorem to guarantee the closed-loop stability. In order to decrease the control system cost, an inductor current estimator is developed. Finally, the effectiveness of the proposed controller is validated through Matlab/Simulink and experiments on a prototype single-phase inverter test bed with a TMS320LF28335 DSP. The simulation and experimental results show that compared to the conventional SMC and CSMC, the proposed ACSMC control strategy achieves more excellent performance such as fast transient response, small steady-state error, and low total harmonic distortion no matter under load step change, nonlinear load with inductor parameter variation or external disturbance.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.405-407
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• 2005

As the screen size of LCD increases, EEFL(External Electrode Fluorescent Lamp) has been suggested to be applicable as backlight source for LCD . Since the electrodes of EEFL are outside of the tube, EEFL enhances the lifetime compared with CCFL(Cold Cathode Fluorescent Lamp), and a single inverter can drive multiple EEFL tubes of which luminance is uniform Therefore, a compact design can be realized and the cost of EEFL application would be much lower than that of CCFL. Moreover, EEFL inverter has higher efficiency per unit power than CCFL inverter. In this paper, a complementary full-bridge PWM(Pulse Width Modulation) inverter was designed for 32-inch LCD TV backlight which has 20 EEFL tubes and adapted two different driving methods to the EEFL inverter. The validity of this study is confirmed from the experimental results.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.160-164
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• 2018

In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.10
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• pp.1494-1498
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• 2017

In this study, we investigate the influence of an overlap between the gate and source/drain regions of silicon nanowire (SiNW) CMOS (complementary metal-oxide-semiconductor) inverter on bendable plastic substrates and describe their electrical characteristics. The combination of n-channel silicon nanowire field-effect transistor (n-SiNWFET) and p-channel silicon nanowire field-effect transistor (p-SiNWFET) operates as an inverter logic gate. The gains with a drain voltage ($V_{dd}$) of 1 V are 3.07 and 1.21 for overlapped device and non-overlapped device, respectively. The superior electrical characteristics of each of the SiNW transistors including steep subthreshold slopes and the high $I_{on}/I_{off}$ ratios are major factors that enable the excellent operation of the logic gate.