• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.2030-2031
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• 2008

We have developed the calibration technique of the VT comparator using nonreactive standard resistors and a standard capacitor, which evaluates both accuracy and linearity of the VT comparator by comparing experimental values with theoretical values. The specification for phase displacement of VT comparator have been revaluated.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.417-422
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• 2021

In this paper, a ZQ calibration using a time domain comparator is proposed. The proposed comparator is designed based on VCO, and an additional clock generator is used to reduce power consumption. By using the proposed comparator, the reference voltage and the PAD voltage were compared with a low 1 LSB voltage, so that the additional offset cancelation process could be omitted. The proposed time domain comparator-based ZQ calibration circuit was designed with a 65nm CMOS process with 1.05V and 0.5V supply voltages. The proposed clock generator reduces power consumption by 37% compared to a single time domain comparator, and the proposed ZQ calibration increases the mask margin by up to 67.4%.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.6
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• pp.465-471
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• 2023

This paper proposes a comparator structure that improves the noise and output delay of a single-slope ADC(SS-ADC) used in CMOS Image Sensor (CIS). To improve the noise and delay characteristics of the output, a comparator structure using the miller effect is designed by inserting a capacitor between the output node of the first stage and the output node of the second stage of the comparator. The proposed comparator structure improves the noise, delay of the output, and layout area by using a small capacitor. The CDS counter used in the single slop ADC is designed using a T-filp flop and bitwise inversion circuit, which improves power consumption and speed. The single-slope ADC also performs dual CDS, which combines analog correlated double sampling (CDS) and digital CDS. By performing dual CDS, image quality is improved by reducing fixed pattern noise (FPN), reset noise, and ADC error. The single-slope ADC with the proposed comparator structure is designed in a 0.18-㎛ CMOS process.

• Proceedings of the KSR Conference
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• 1998.05a
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• pp.408-418
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• 1998

This paper presents the implementation of comparator which is self-testing with respect to the faults caused by any single physical defect likely to occur in NMOS and CMOS integrated circuit. The goal is to use it for the fault-tolerant system. First, a new fault model for PLA(Programmable Logic Array) is presented. This model reflects several physical defects in VLSI circuits. It focuses on the designs based on PLA because VLSI chips are far too complex to allow detailed analysis of all the possible physical defects that can occur and of the effects on the operation of the circuit. Second, this paper shows that these design, which has been implemented with 2 level AND-ORor NOR-NOR circuit, are optimal in term of size. And it also presents a formal proof that a comparator implemented using NOR-NOR PLA, based on these design, is sol f-testing with respect to most single faults in the presented fault model. Finally, it discusses the application of the self-testing comparator as a building block for the implementation of the fault-tolerant system.

• ETRI Journal
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• v.34 no.2
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• pp.284-287
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• 2012

Quantum-dot cellular automata (QCA) is one of the few alternative computing platforms that has the potential to be a promising technology because of higher speed, smaller size, and lower power consumption in comparison with CMOS technology. This letter proposes an optimized full comparator for implementation in QCA. The proposed design is compared with previous works in terms of complexity, area, and delay. In comparison with the best previous full comparator, our design has 64% and 85% improvement in cell count and area, respectively. Also, it is implemented with only one clock cycle. The obtained results show that our full comparator is more efficient in terms of cell count, complexity, area, and delay compared to the previous designs. Therefore, this structure can be simply used in designing QCA-based circuits.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.12
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• pp.28-36
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• 1997

In this paper, system application techniques of a low-voltage low-power CMOS comparator are proposed. The proposed techniques employ poly-layer lines instead of conventional dummy cells to improve the accuracy of comparators which are located in both ends of a comparator array. This technique is easily applicable for hihg-density systems such as memory. The proposed circuits are implemented using a 0.6 um signle-poly double-metal n-well CMOS technology and the dissipated power is 0.38 mW. at a 20MHz clock speed based on a 3V supply. The comparator offsets are measured separately and compared for system applications. Using the proposed techniues, the measured comparator offsets are reduced by 40% of a conventional case.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.54 no.2
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• pp.66-70
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• 2005

Linearity of ratio error of instrument transformer comparator has been tested using wide ratio error voltage transformer(VT) with the ratio errors in the range of -3 ％ to 3 ％. The technique is the method for evaluation of the linearity for instrument transformer comparator by comparing both the theoretical and experimental values in wide ratio error VT. The developed method has been successfully applied for calibration and correction in instrument transformer comparator belonging to industry.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.82-87
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• 2021

In this paper, we propose a high-speed, low-power complementary metal-oxide semiconductor (CMOS) binary image sensor featuring a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector based on a double-tail comparator. The GBT photodetector forms a structure in which the floating gate (n+ polysilicon) and body of the PMOSFET are tied, and amplifies the photocurrent generated by incident light. The double-tail comparator compares the output signal of a pixel against a reference voltage and returns a binary signal, and it exhibits improved power consumption and processing speed compared with those of a conventional two-stage comparator. The proposed sensor has the advantages of a high signal processing speed and low power consumption. The proposed CMOS binary image sensor was designed and fabricated using a standard 0.18 ㎛ CMOS process.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.3
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• pp.1-7
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• 2014

This paper describes the implementation of high speed comparator for the ATE (automatic test equipment) system. The comparator block is composed of continuous comparator, differential difference amplifier(DDA) and output stage. For the wide input dynamic range of 0V to 5V, and for the high speed operation (1~800MHz), high speed rail-to-rail amplifier is used in the first stage. And hysteresis circuits, pre-amp and latch are followed for high speed operation. To measure the difference of output signals between the two devices under test (DUTs), a DDA is applied because it can detect the differences of both common signals and differential signals. This comparator chip was implemented with $0.18{\mu}m$ BCDMOS process and can compare the signal difference of 5mV up to the frequency range of 800 MHz. The chip area of the comparator is $620{\mu}m{\times}830{\mu}m$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.2
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• pp.169-175
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• 2020

This paper studied the SET situation in VLSI because the electronic devices exposed to SET can indicate irregular operation and output errors. The SET environment was established using the exponential static wave (iexp) in the fold-cascode comparator. The comparator was experimented with how it affected it by the SET. In a folded comparator that did not enter the SET situation, the propagation delay was measured at 0.26㎲ and the gain was 0.649. The MOSFET close to the output stage was measured sensitively in the folded comparator that entered the SET situation. And propagation delay was calculated from 0.36 to 0.37㎲ and the gain was 0.649. The mid-position MOSFET was calculated from 0.28 to 0.30㎲ and the gain was 0.649. The MOSFET, which is farthest from the output stage from the folded comparator, was calculated with the propagation delay between 0.25 and 0.26㎲ and the gain of 0.649. In SET situations, the MOSFET close to the output portion of the folded comparator was sensitive. And at the MOSFET far from the output, the same results were obtained as a normal folded comparator without the SET input.