• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.280-283
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.233-238
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.263-263
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• 2010

High temperature annealing is required to synthesize graphene using CVD. When thin metal catalyst is used for the synthesis, the high temperature pre-annealing makes the thin catalyst highly agglomerated. We investigated the agglomeration effect on the shape of the synthesized graphene. It is found that high temperature annealing makes randomly distributed many hole or blister on metal catalyst, and the synthesized graphene features floral pattern around the hole. The floral patterns of graphene turned out to be multi-layers and higher D peaks in raman spectrum.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2003.10a
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• pp.216-219
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• 2003

• Bulletin of the Korean Chemical Society
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• v.26 no.10
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• pp.1585-1587
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• 2005

• Bulletin of the Korean Chemical Society
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• v.21 no.12
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• pp.1239-1244
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• 2000

A study of K addition to the catalyst of CoMo/ ${\gamma}-Al_2O_3$ was studied. The catalyst with 10 at% of K to Mo atoms in 3C10M, the catalyst added 3 wt% CoO to 10 wt% $MoO_3/{\gamma}-Al_2O_3$, showed the highest activity for water gas shift reaction. The addition of K retarded the reducibility of cobalt-molybdenum catalysts. It gave, however, good dispersion and large BET surface area to the catalysts which were attributed to the disappearance of polymolybdate clustyer such as $Mo_7O_{24}^{6-}$ and the formation of small Mo$O_4^{2-}$ cluster. It was confirmed by the analyses of pore size distribution, activation energy, Raman spectroscopy, and electron diffraction. The activation energies and the frequency factors of the catalysts 3C10M and 5KC10M (the catalyst added 5 at% K for Mo to the catalyst 3C10M) were 43.1 and 47.8 kJ/mole, and 4,297 and 13,505 $sec^{-1}$, respectively. These values were also well correlated with our suggestion. These phenomena were attributed to the direct interaction between K and CoMo oxides irrelevant to the support.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.675-679
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• 1999

An investigation was performed to prepare spherical cobalt powder with about particle size of 400nm from aqueous cobalt hydroxide slurry under hydrothermal reduction conditions using palladium chloride as a catalyst. The reduction kinetics was in good agreement with a surface reaction core model equation. and the activation energy obtained from Arrhenius plots was 55.6 KJ/mol at the temperature range of $145~195^{\circ}C$. Additionally, the study showed that the cobalt reduction rate is proportional to the initial hydrogen pressure with a reaction order of n=0.63. which corresponds to the gas chemisorption reaction type.

• Korean Journal of Materials Research
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• v.32 no.10
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• pp.408-413
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• 2022

The oxygen evolution reaction (OER) is very sluggish compared to the hydrogen evolution reaction (HER). Considering this difference is essential when designing and developing a cost-effective and facile synthesis method for a catalyst that can effectively perform OER activity. The material should possess a high surface area and more active sites. Considering these points, in this work we successfully synthesized sheets of cobalt phosphate hydrate (CP) and sulphurated cobalt phosphate hydrate (CPS) material, using simple successive ionic layered adsorption and reaction (SILAR) methods followed by sulfurization. The CP and CPS electrodes exhibited overpotentials of 279 mV with a Tafel slope of 212 mV dec^-1 and 381 mV with a Tafel slope of 212 mV dec^-1, respectively. The superior performance after sulfurization is attributed to the intrinsic activity of the deposited well-aligned nanosheet structures, which provided a substantial number of electrochemically active surface sites, speeded electron transfer, and at the same time improved the diffusion of the electrolyte.

• Macromolecular Research
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• v.13 no.1
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• pp.2-7
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• 2005

A series of ethylene polymerization catalysts based on tridentate bis-imine ligands coordinated to iron and cobalt was reported. The ligands were prepared through the condensation of sterically bulky anilines with allyloxy-and benzyloxy-substituted 2,6-acetylpyridines. The pre-catalyst complexes were penta-coordinate species of the general formula $\{[(ArN=C(Me))_2(4-RO-C_5H_3N)]MCl_2\}$ (Ar=ortho dialkyl-substituted aryl ring; R=allyl, benzyl; M=Fe, Co). In the presence of ethylene and methyl alumoxane cocatalysts, these complexes were active for the polymerization of ethylene, with activities lower than those of metal complexes of the general formula $\{[(2-ArN=C(Me)_2C_5H_3N]MCl_2\}$ (Ar=ortho dialkyl-substituted aryl ring; M=Co, Fe), containing no substituents in 2,6-acetylpyridine ring. The effects of the catalyst structure and temperature on the polymerization activity, thermal properties, and molecular weight were discussed.

• Bulletin of the Korean Chemical Society
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• v.28 no.11
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• pp.2056-2060
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• 2007

A successful combination of “oxygen-assisted chemical vapor deposition (CVD) process” and Co catalyst nanoparticles to grow highly pure single walled carbon nanotubes (SWNTs) was demonstrated. Recently, it was reported that addition of small amounts of oxygen during CVD process dramatically increased the purity and yield of carbon nanotubes. However, this strategy could not be applied for discrete Fe nanoparticle catalysts from which appropriate yields of SWNTs could be grown directly on solid substrates, and fabricated into field effect transistors (FETs) quite efficiently. The main reason for this failure is due to the carbothermal reduction which results in SiO2 nanotrench formation. We found that the oxygen-assisted CVD process could be successfully applied for the growth of highly pure SWNTs by switching the catalyst from Fe to Co nanoparticles. The topological morphologies and p-type transistor electrical transport properties of the grown SWNTs were examined by using atomic force microscope (AFM), Raman, and from FET devices fabricated by photolithography.