• Journal of Microbiology and Biotechnology
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• v.20 no.9
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• pp.1348-1350
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• 2010

Conidia of Beauveria bassiana ARSEF-7060, produced in millet amended with plant oils such as sunflower, corn, or cotton seed oil, were exposed to $45^{\circ}C$ of wet heat for 90 min. Conidia from millet+corn oil medium had the highest thermotolerance [$LT_{50}$ (median survival time): 45.7 min]. The mycotized millet grains were coated with each of the same plant oils as a granular formulation and subjected to $50^{\circ}C$ of dry heat for 8 h. Corn oil coating ($LT_{50}$: 8.68 h) was superior to sunflower and cotton seed oil coatings, suggesting the feasibility of using corn oil to increase conidial thermotolerance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.53-60
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• 2009

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.79-82
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• 2003

We prepared YBCO coated conductor by direct deposition of YBCO on Ag substrate by a MOCVD method. The Ag substrate was only prepared by cold rolling. The XRD data of the as-rolled Ag tape showed the formation of dominant (420) oriented grains. Processing variables were the oxygen partial pressure (Po$_2$) and deposition temperature (T$_{d}$). It was found that the a-axis oriented films were grown at lower T$_{d}$ below 80$0^{\circ}C$, while the c-axis oriented films were grown about 80$0^{\circ}C$. The surface of the films consisted of a second inclusion phase dispersed in the YBCO matrix. The Cu-rich phase regions were observed at the YBCO/Ag interface probably due to the inter-diffusion of Ag and Cu. Cu.

• Journal of the Korean Society of Safety
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• v.19 no.1
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• pp.72-76
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• 2004

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT)thin films are deposited on pt-coated electrode(Pt/$TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with annealing conditions were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at $750^{\circ}C$,/TEX> and grains largely grew in oxygen annealing atmosphere. The maximum renanent polarization and the coercive electric field with annealing conditions are 12.40C/$cm^2$ and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 2.13${\times}10^{-10}A/cm^2$, respectively.

• Journal of the Korean institute of surface engineering
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• v.52 no.3
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• pp.111-116
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• 2019

Chromium was coated on a steel substrate by the Cr(III) electroplating method, and corroded at $500-900^{\circ}C$ for 5 h in $N_2/0.1%H_2S-mixed$ gas to study the high-temperature corrosion behavior of the Cr(III) coating in the highly corrosive $H_2S-environment$. The coating consisted of (C, O)-supersaturated, nodular chromium grains with microcracks. Corrosion was dominated by oxidation owing to thermodynamic stability of oxides compared to sulfides and nitrides. Corrosion initially led to formation of the thin $Cr_2O_3$ layer, below which (S, O)-dissolved, thin, porous region developed. As corrosion progressed, a $Fe_2Cr_2O_4$ layer formed below the $Cr_2O_3$ layer. The coating displayed relatively good corrosion resistance due to formation of the $Cr_2O_3$ scale and progressive sealing of microcracks.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.2
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• pp.75-80
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• 2021

The crystal grains of polycrystalline diamond vary depending on deposition conditions and growth thickness. The diamond thin film deposited by the CVD method has a very rough growth surface. On average, the surface roughness of a diamond thin film deposited by CVD is in the range of 1-100 um. However, the high surface roughness of diamond is unsuitable for application in industrial applications, so the surface roughness must be lowered. As the surface roughness decreases, the scattering of incident light is reduced, the heat conduction is improved, the mechanical surface friction coefficient can be lowered, and the transmittance can also be improved. In addition, diamond-coated cutting tools have the advantage of enabling ultra-precise machining. In this study, the surface roughness of diamond was improved by thermal diffusion reaction between diamond carbon atoms and ferrous metals at high temperature for diamond thin films deposited by MPCVD.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.645-650
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• 1998

Alumina- and yttria-coated SiC powder was prepared by the surface-induced precipitation method, and sintered properties of silicon carbide prepared from this powder were investigated. After a well dispersion of SiC powders in the aqueous solution of $Al_2(SO_4)_3$ and $Y_2(SO_4)_3$, the mixed precursors of aluminum hydroxide, aluminum carbonate, yttrium hydroxide, and yttrium carbonate were precipitated on the surfaces of SiC particles through the hydrolysis reaction of urea. SiC specimens with alumina and yttria exhibit, 97.8% of theoretical density after the sintering at $1900^{\circ}C$ for 2 hrs. During annealing at $2000^{\circ}C$, $\beta$longrightarrow$\alpha$ phase transformation of SiC had taken place and resulted with a rodlike microstructure. Toughness of sintered SiC was enhanced by crack deflection around the rodlike grains. In case of annealing less than that of 3 hr, the fracture toughness of SiC was slightly improved with increasing the amount of sintering aid. However, annealed specimens for a long time showed constant fracture toughness even though the amount of sintering aid increased. It is resulted that the main factor for toughening in annealed SiC for a long time is the pullout effect of rodlike grains during the propagation of cracks, and the amount of sintering aids is less effective on the fracture toughness of SiC.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.113-118
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• 1999

Aluminum hydrates were synthesized using $AlCl_3$.$6H_2O$as starting material by precipitation method. The phases of obtained powder were amorphous, boehmite, bayerite, nordstrandite depending on the pH of solutions. Aluminum hydrates transformed to $\alpha-Al_2O_3$via $\gamma$- $Al_2O_3$,$\delta$- $Al_2O_3$,and $\theta$-$Al_2O_3$,and particle sizes were grown by increment of heating temperature. The TEX>$\gamma$- $Al_2O_3$ powder was coated on intermediate layer of ceramic membrane by the dip-coating method, and unsupported membrane was also prepared for comparison. The supported layer showed porous structure with small grains, but the unsupported layer revealed interconnected larger grains. Grain growth is dominant in the unsupported layer than in the supported one.

• Applied Microscopy
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• v.22 no.2
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• pp.118-126
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• 1992

The pathway and time course of fucose-containing glycoprotein synthesis and intracellular translocation in osteoclasts of the mice maxillary alveolar bone were investigated by electron microscopic radioautography. Male Balb-C mice weighing 17gm were anesthetized with Nembutal and injected via the external jugular vein with 2.5 mCi of $L-[6-^{3}H]-fucose$ (specific activity 16.8 mCi/mmol) in 0.1 ml of sterile saline solution. At 5, 10, 20, 35 minutes and 8 hours after administration of the $^{3}H-fucose$, animals were killed by intracardiac perfusion of 30ml of 2% glutaraldehyde in a modified Tyroid solution, pH 7.4. The maxillae were then removed and further fixed in Karnovsky fixative for an additional 3-4 hours. After rinsing in 0.1M cacodylate buffer for 10 minutes, the maxillae were demineralized for 2 weeks at $4^{\circ}C$ in ethylene diamine tetra acetate containing 2% glutaraldehyde. The first interdental areas were mesiodistally sectioned into slices of 1mm thickness and postfixed in osmium tetroxide. Tissues were then dehydrated and embedded in Poly Bed. To prepare electron microscopic radioautography, the dipping method of Kopriwa (1973) was employed. Thin sections were coated with a crystalline monolayer of ILford $L_4$ photographic emulsion. After exposure for 4 months at $4^{\circ}C$, the sections were developed Kodak Microdol-X and Phenidon (for compact grains), fixed in 30% sodium thiosulfate, stained with uranyl acetate and lead citrate and examined in the electron microscope (JEOL 1200 EX). At 5, 10 and 20 minutes after injection, $^{3}H-fucose$ was concentrated in Golgi cisternae of the osteoblasts. By 35 minutes the labels were observed over small vesicles in the suprannclear area of osteoclasts. At 8 hours, numerous silver grains were located on the ruffled border and cell membrane of osteoclasts. These results indicate that fucose molecules are added in the Golgi apparatus and small vesicles appear to be responsible for translocation of the glycoproteins to the marginal portion of osteoblasts. The glycoproteins are distributed on the osteoclast cell surface and especially over the ruffled border.

• Progress in Superconductivity
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• v.8 no.2
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• pp.175-180
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• 2007

High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.