Browse > Article

Ferroelectric Properties of SBT Capacitors with Annealing Conditions  

Lee, Sung-Ill (Department of Safety Engineering, Chungju National University)
Publication Information
Journal of the Korean Society of Safety / v.19, no.1, 2004 , pp. 72-76 More about this Journal
Abstract
The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT)thin films are deposited on pt-coated electrode(Pt/$TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with annealing conditions were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at $750^{\circ}C$,/TEX> and grains largely grew in oxygen annealing atmosphere. The maximum renanent polarization and the coercive electric field with annealing conditions are 12.40C/$cm^2$ and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 2.13${\times}10^{-10}A/cm^2$, respectively.
Keywords
RF magnetron sputtering method; annealing temperatures; leakage current density; remanent polarization;
Citations & Related Records
연도 인용수 순위
  • Reference
1 C. I, Kim et al, Bulletin of the Korea Institute of Eletrical and Electronic Material Engineering, Vol. 13, No.4, pp, 33-38, 2000
2 Kaoru Miura et al, 'The effect of Bi ions substituting at the Sr site in Sr$Bi_2Ta_2O_9$', lpn, J. Appl. Phys. Vol. 37, 1998
3 S. Y. Chen et aI, 'Aging behavior and recovery of polarization in $Sr_0.8Bi_2.4Ta_2O_9$ thin films', 1. Appl. Phys, Vol. 87, No.6, pp. 3050-3055, 2000   DOI   ScienceOn
4 Kazumi Kato, 'Low Temperature Synthesis of $SrBi_2Ta_O_9$ Ferroelectric Thin Films through the Complex Alkoxide Method:Effects of Functional Group, Hydrolysis and Water Vapor Treatment', Jpn. J. Appl. Phys. Vol. 37, Pt.1, No. 9B, pp. 5178, 1998   DOI
5 C.I.Cheon et aI, 'Electrical Properties of SBT Ferroelectric Thin Films Prepared by MOD', lownal of the Korean Institute of Electrical and Electronic Material Engineers. Vol. 12, No.2, pp. 151, 1999
6 M. A. Rodrinues et al, 'Phase formation and characterization of the Sr$Bi_2Ta_2O_9$ layered perovskite ferroeelctric", Intergrated Ferroelectric, Vol. 14, pp. 201, 1997   DOI   ScienceOn
7 Shin-ichi et al, 'Effects of annealing in Ar gas on ferroelectric properties of Sr$Bi_2Ta_2O_9$ thin film', Jpn, J. Appl. Phys., Vol. 37, 1998
8 Nobuyuki Soyama, Kazunari Maki, Satoru Mori and Katsumi Ogi, 'Preparation and Evaluation of Pb(Zr,Ti)$O_3$ Thin Films for Low Voltage Operation', Jpn. J. Appl. Phys. Vol. 39, Pt. 1, No. 9B, pp. 5434-5436, 2000   DOI
9 M. A. Rodrinues et al, 'Phase formation and characterization of the Sr$Bi_2Ta_2O_9$ layered-perovskite ferroeelctric', Intergrated Ferroelectric, Vol. 14, pp. 201, 1997   DOI   ScienceOn
10 Kazunari Maki, Nobuyuki Soyarna, Satoru Mori and Katsumi Ogi, 'Evaluationof Pb(Zr,Ti)$O_3$ Films Derived from Propylene Glycol Based Sol Gel Solutions', Jpn. J. Appl. Phys. Vol. 39, Pt. 1, No. 9B, pp. 5421-5425, 2000   DOI