• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2002.10b
• /
• pp.145-146
• /
• 2002

Tribological properties of co-sputtered Molybdenum disulfide $(MoS_2)/Carbon\;(C)$ films were studied and compared with those of sputtered $MoS_2$ films. Friction tests were carried out using pin-on-disk friction testers to evluated their friction and wear behaviors in a vacuum ($10^{-5}Pa$), air and humid air of 30, 50, 80% RH. $MoS_2/C$ (14%) composite films exhibited about 9 times longer wear life in a vacuum and about 6 times longer wear life in dry air than $MoS_2$ films did. They also showed stable low friction coefficient of about 0.02 in a vacuum. In humid air, however, $MoS_2/C$ composite films hardly showed good tribological properties.

• Journal of the Korean Society for Heat Treatment
• /
• v.21 no.1
• /
• pp.26-32
• /
• 2008

Effects of annealing treatment on microstructure and mechanical property of co-sputtered TiNi thin films were studied. As-deposited films showed amorphous state. However, above annealing temperature of $500^{\circ}C$ martensite phase (B19'), precipitate phase ($Ti_2Ni$) and a small amount of parent phase ($B_2$) were present, and phase transformation behaviors were three multi-step phase transformations $B19^{\prime}{\rightarrow}B_2$ and $B_2{\rightarrow}R-phase$ and $R-phase{\rightarrow}B19^{\prime}$. Increase of martensite transformation temperature, increase of microhardness and Young's modulus of TiNi films annealed above $500^{\circ}C$ were discussed in terms of precipitate phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.464-467
• /
• 2004

An uncooled infrared sensor has been prepared with sputtering, plasma ash, ICP, and PECVD on a Si wafer In order to analyze the resistance characteristics with the bridge length in the infrared sensor, three samples were prepared with lengths of 0 (no bridge), 15 (short bridge), and 29 urn (long bridge), respectively. I-V curves were measured for their resistance characteristics and EPMA for the dopping concentration of the amorphous Si. The phosphorus concentration was about 4 % and the resistance was increased with the bridge length. The bridge length of cantilever is very important factor for improvement of the efficiency in an infrared sensor.

• 한국신재생에너지학회:학술대회논문집
• /
• 2007.11a
• /
• pp.301-304
• /
• 2007

다결정 태양전지의 원료인 폴리실리콘을 생산하는 방법 중 하나인 지멘스 방법에서 사용되는 실리콘 코어로드를 금속 계열의 코어로드로 대체하기 위한 연구를 진행하였다. 본 연구에서는 실리콘 코어로드의 대체물질 후보로서 고융점 금속인 텅스텐, 탄탈륨, 몰리브덴을 선택하였고, co-sputtering system을 이용하여 다성분계의 박막을 실리콘 기판에 증착시켜 $800^{cdot}C$에서 $1000^{cdot}C$의 고온에서 열처리 후 박막의 형상변화 및 확산정도를 관찰하였다. 열처리 온도에 따른 박막의 형상 및 확산 정도를 관찰하기 위하여 Scanning electron microscopy (SEM), X-ray diffractometer(XRD), transmission electron microscopy(TEM), auger electron spectroscopy(AES)가 사용되었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2003.10a
• /
• pp.381-384
• /
• 2003

In this paper, cobalt (Co)-electrode FBAR devices fabricated on seven-layered Bragg Reflectors are presented along with their resonance characteristics. ZnO films are used as the resonating material in FBAR devices where the Co electrode is 3000$\AA$ thick. All processes are preformed in an RF magnetron sputtering system. As a result of characterization, the resonance characteristics are observed to depend strongly on the quality of ZnO film and Bragg Reflectors. In addition, the FBAR devices with W/SiO$_2$ reflectors show good resonance characteristics in term of return loss and quality-factor (Q-factor).

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.860-863
• /
• 2002

In this study, Ag thin films deposited on LCD-grade glass were etched using inductively coupled fluorine-based plasmas and the effect of various $CF_4$-based gas mixtures on the Ag etching characteristics were studied. When $CF_4$-based gas mixtures were used with $N_2$, due to the very low vapor pressure of etch products, etch products remained on the substrate after the etching. However, when $CF_4$ used with Ar, residue-free Ag etching could be obtained due to the removal of etch product by sputtering by $Ar^+$ ions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1994.11a
• /
• pp.190-191
• /
• 1994

In this paper, We study on the fabrication of amorphous this film of zeromagnetostriction material and the magnetic properties. This films are fabricated by using sputtering method with input power of 400∼607[W], Ar gas pressure of 3∼ 9[mTorr] and target composition of Fe$\sub$4.7/ Co$\sub$74.3/Si$_2$B$\sub$19/. Sample this films with diameter of 14[mm ] and thickness of 27-30[$\mu\textrm{m}$] were obtained through experiments. When we analyzed the magnetic properties before and after annealing with sample thin films, we confirmed that magnetic domain wall amorphous thin films consisted for Neel magnetic domain wall with the width of about 1[$\mu\textrm{m}$].

• Journal of Magnetics
• /
• v.18 no.2
• /
• pp.155-158
• /
• 2013

FeCoB films were being prepared on a Ru underlayer by using the oblique incidence of sputtered and back-scattered particles which have a high in-plane magnetic anisotropy field $H_k$ above 400 Oe. It is suitable to attain such deposition condition when facing targets sputtering system. The in-plane X-ray diffraction analysis clarified that there is anisotropic residual stress which is the origin of the high in-plane magnetic anisotropy. The directional crystalline alignment and inclination of crystallite growth were also observed. Such anisotropic crystalline structures may affect the anisotropic residual stress in the films. The B content of 5.6 at.% was appropriate to induce such anisotropic residual stress and $H_k$ of 410 Oe in this experiment. The film with B content of 6 at.% possessed large saturation magnetization of 22 kG and high $H_k$ of 500 Oe. The film exhibited high ferromagnetic resonance frequency of 9.2 GHz.

• Electrical & Electronic Materials
• /
• v.10 no.8
• /
• pp.813-818
• /
• 1997

In this study the thin film air core and magnetic core inductors consisting of planar coil and/or CoNbZr amorphous magnetic layers on a Si substrate were fabricated as spiral type by using rf magnetron sputtering and wet etching methods. The etchant solution was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec which etched Cu films and CoNbZr/Cu/CoNbZr multi-layer films. They were about 10${\mu}{\textrm}{m}$ of thickness and 10$\times$10 mm$^2$of size. The properties of thin film magnetic core inductor were 400 nH of Q value at 10 MHz and the resonance frequency was about 300 MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05b
• /
• pp.94-97
• /
• 2005

Bismuth high Tc superconducting thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra low growth rate, and sticking processing of the respective elements are evaluated. The sticking processing of bismuth element in bismuth high Tc superconducting thin film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the bismuth phase formation in the co-deposition process.