• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.222-225
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• 2000

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $Po_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$ (onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a smd amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in d of the obtained films.

• 대한화학회지
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• 제66권5호
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• pp.341-348
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• 2022

In this work, radio frequency magnetron sputtering was used to deposit zinc selenide thin films on p-type silicon (100) wafers and glass substrates in a high vacuum chamber. Several surface characterization instruments were implemented to study the thin films. X-ray photoelectron spectroscopy results revealed that oxidized Zn bound to Se (Zn-Se) at 1022.7 ± 0.1 eV becomes the dominant oxidized species when Se concentration exceeds 70%. Scanning electron microscopy coupled with energy dispersive spectroscopy showed that incorporating Se in Zn thin films will lead to formation of ZnSe grains on the surface. Contact angle measurements indicated that ZnSe-60 exhibited the lowest total surface free energy value of 24.94 mN/m. Lastly, ultraviolet-visible spectrophotometry and ultraviolet photoelectron spectroscopy data evinced that the energy band gap gradually increases with increasing Se concentration with ZnSe-70 having the highest work function value of 4.91 eV.

• 한국재료학회지
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• 제31권11호
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• pp.614-618
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• 2021

As the size of market for electric vehicles and energy storage systems grows, the demand for lithium-ion batteries (LIBs) is increasing. Currently, commercial LIBs are fabricated with liquid electrolytes, which have some safety issues such as low chemical stability, which can cause ignition of fire. As a substitute for liquid electrolytes, solid electrolytes are now being extensively studied. However, solid electrolytes have disadvantages of low ionic conductivity and high resistance at interface between electrode and electrolyte. In this study, Li₇La₃Zr₂O₁₂ (LLZO), one of the best ion conducting materials among oxide based solid electrolytes, is fabricated through RF-sputtering and various electrochemical properties are analyzed. Moreover, the electrochemical properties of LLZO are found to significantly improve with co-sputtered Li₂O. An all-solid thin film battery is fabricated by introducing a thin film solid electrolyte and an Li₄Ti₅O₁₂ (LTO) cathode; resulting electrochemical properties are also analyzed. The LLZO/Li₂O (60W) sample shows a very good performance in ionic conductivity of 7.3×10^-8 S/cm, with improvement in c-rate and stable cycle performance.

• 한국자기학회지
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• 제3권4호
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• pp.320-324
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• 1993

스퍼터된 자기기록매체 Co-10at%Cr-2at%Mo/Cr 자성박막의 제조조건이 미세구조와 자기적특성에 미치는 영향을 조사하였다. 기판의 온도는 상온-$250^{\circ}C$로 하였으며 Cr하지층과 CoCrMo층의 두께는 각각 $1000-2500\AA$, $300-800\AA$이었다. CoCrMo층의 두께가 $500{\AA}-800{\AA}$ 증가함에 따라 결정립은 미세화 되었으며 균일한 조직을 나타냈다. 보자력은 기판의 온도, CoCrMo자성층, Cr하지층의 두께 를 증가시켰을때 향상되었다. 기판온도가 $250^{\circ}C$, 자성층의 두께가 $700\AA$, Cr 하지층의 두께가 $1000\AA$일때 880 Oe의 보자력을 나타냈다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.272.2-272.2
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• 2016

Copper-Tin (CuSn) thin films were synthsized by rf magnetron co-sputtering method with pure Cu and Sn metal targets with various rf powers and sputtering times. The obtained CuSn thin films were characterized by a surface profiler (alpha step), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), and contact angle measurement. The deposition rates were calculated by the thickness of CuSn thin films and sputtering times. We observed hexagonal Cu20Sn6 and cubic Cu39Sn11 phases from the films by XRD measurement. From the survey XPS spectra, the Cu and Sn main peaks were observed. Therefore, we could conclude CuSn thin films were successfully fabricated on the substrate in this study. The changes of oxidation states and chemical environment of the films were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. Surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG) using the contact angle measurement. The total SFE of CuSn thin films decreased as rf power on Cu target increased. The contribution to the total SFE of dispersive SFE was relatively superior to polar SFE.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1477-1479
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• 2005

In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current at room temperature. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical, optical characteristics and surface roughness of prepared ITO thin films were measured. In the results, as increasing $O_2$ gas 0.1[sccm] to 0.7[sccm], resistivity of ITO thin film was increased with a decreasing carrier concentration, $O_2$ gas over 0.3[sccm] the carrier mobility have a similarly value. Transmittance of prepared ITO thin films were improved at increasing $O_2$ gas 0.1[sccm] to 0.7[sccm]. And transmittance of all of the prepared ITO thin films was over 80%. We could obtain resistivity $6.19{\times}10^{-4}[{\omega}{\cdot}cm]$, carrier mobility $22.9[cm^2/V{\cdot}sec]$, carrier concentration $4.41{\times}10^{20}[cm^{-3}]$ and transmittance over 80% of ITO thin film prepared at working pressure 1mTorr, input current 0.4A without any substrate heating.

• 한국세라믹학회지
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• 제33권5호
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• pp.514-518
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• 1996

Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{\circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$\AA$~1100 $\AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.231-232
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• 2007

Nickel oxide thin films were deposited by the DC magnetron reactive sputtering process under the conditions such as various oxygen flow rates(0, 3, 6, 8, 10 sccm) with constant 33 sccm argon flow rate for the sputtering time of 40 second with the power of 0.3 kW. Sheet resistances were measured by the four point probes. In order to observe discharge voltage characteristics according to the oxygen flow rates, the sputtering processes were performed under the powers of 0.2kW and 0.3kW. The feasibility of the coating system for high quality ferromagnetic thin films was tested through the electromagnetic simulation and the thin film thickness measurement from the experiment. It was shown that a discharge voltage was decreased under the low power and low oxygen flow rate, since the oxygen was quickly saturated on nickel target surface. The sheet resistance was increased as oxygen flow rate increased. The film thickness deposited by the coating system for ferromagnetic target was improved approximately 10% in comparison with previous coating systems.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1993년도 춘계연구발표회 논문개요집
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• pp.20-21
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• 1993

• 한국자기학회지
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• 제6권3호
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• pp.170-173
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• 1996

3-gun 마그네트론 스퍼터 장치로 Co-Zr 다층 박막을 제작하여 저온 비정질화를 시도하였다. 박막 x-ray와 단면 투과 전자현미경 분석에 의해 지르코늄 층이 코발트의 확산에 의해 비정질화 됨과 그의 위쪽 계면의 지르코늄 비정질화 속도가 아래쪽 계면의 그것보다 두 내지 세배 빠른 것을 발견하였다. 이 현상은 스퍼터링 중의 분자 섞임으로 설명되었다.