• 제목/요약/키워드: chemical-vapor deposition

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Chemical Vapor Deposition Polymerization of Poly(arylenevinylene)s and Applications to Nanoscience

  • Joo, Sung-Hoon;Lee, Chun-Young;Kim, Kyung-kon;Lee, Ki-Ryong;Jin, Jung-Il
    • Bulletin of the Korean Chemical Society
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    • 제27권2호
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    • pp.169-184
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    • 2006
  • A review is made on the chemical vapor deposition polymerization (CVDP) of insoluble and infusible poly(arylenevinylene)s and its applications to nanoscience. Poly(p-phenylenevinylene) (PPV), poly(naphthylenevinylene)s, poly(2,5-thinenylenevinylene) (PTV), and other homologous polymers containing oligothiophenes could be prepared by the CVDP method in the form of films, tubes, and fibers of nano dimensions. They would be readily converted to graphitic carbons of different structures by thermal treatment. Field emission FE) of carbonized PPV nanotubes, photoconductivity of carbonized PPV/PPV bilayer nanotubes and nanofilms also were studied.

Adsorption of nitrate onto nitrogen-doped activated carbon fibers prepared by chemical vapor deposition

  • Yoo, Pyunghwa;Amano, Yoshimasa;Machida, Motoi
    • Korean Journal of Chemical Engineering
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    • 제35권12호
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    • pp.2468-2473
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    • 2018
  • Nitrogen-doped activated carbon fibers (ACFs) were prepared by chemical vapor deposition using melamine powder and acetonitrile for introducing quaternary nitrogen on the commercial ACFs, subsequently heated at $950^{\circ}C$ and activated by steam. Adsorption experiments of nitrate in aqueous solution were also conducted to evaluate adsorption capacity of the prepared ACFs using ion chromatography. The amount of introduced nitrogen content and nitrogen species on activated carbon fibers was examined by CHN elemental analyzer and X-ray photoelectron spectroscopy, respectively. As a result, adsorption capacity of quaternary nitrogen-doped ACF (ST-ML-AN-ST) was 0.75 mmol/g, indicating ca. two-times higher than that of untreated ACF (0.38 mmol/g). According to the adsorption data, the Langmuir isotherm model was the best fit. The prepared samples were also regenerated using hydrochloric acid. After regeneration, the adsorption capacity of the nitrogen-doped ACF (ST-ML-AN-ST) showed ca. 80% on average, implying that a portion of nitrates was adsorbed on the prepared ACFs irreversibly.

CVD법을 이용한 그래핀합성에 미치는 온도와 압력의 영향 (Influence of Temperature and Pressure on Graphene Synthesis by Chemical Vapor Deposition)

  • 이은영;김성진;전흥우
    • 열처리공학회지
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    • 제28권1호
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    • pp.7-16
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    • 2015
  • The fabrication of high quality graphene using chemical vapor deposition (CVD) method for application in semiconductor, display and transparent electrodes is investigated. Temperature and pressure have major impact on the growth of graphene. Graphene doping was obtained by deposition of $MoO_3$ thin films using thermal evaporator. Bilayer graphene and the metal layer graphene were obtained. According to the behavior of graphene growth P-type doping was confirmed. Graphene obtained through experiments was analyzed using optical microscopy, Raman spectroscopy, UV-visible light spectrophotometer, 4-point probe sheet resistance meter and atomic force microscopy.

수정된 화학증착공정에서 에어로졸 역학, 열전달 및 물질전달 해석 (Analysis of Aerosol Dynamics, Heat and Mass Transfer in the Modified Chemical Vapor Deposition)

  • 박경순;이방원;최만수
    • 대한기계학회논문집B
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    • 제23권2호
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    • pp.262-271
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    • 1999
  • A study of aerosol dynamics has been done to obtain axially and radially varying size distributions of particles generated in the Modified Chemical Vapor Deposition process. Heat and mass transfer have also been studied since particle generation and deposition strongly depend on the temperature field in a tube. Bimodal size distributions of particles have been obtained both in the particulate flow and in the deposited particle layer for the first time using the sectional method to solve aerosol dynamics. Variations of geometric mean diameter, geometric standard deviation have been studied for various parameters; flow rates and maximum wall temperature. The comparison between one-dimensional and two-dimensional approaches has also been made.

LCVD를 이용한 SiC 로드 성장에 관한 실험적 연구 (Experimental Study of the Growth of the SiC Rod using LCVD)

  • 유재은;이병로;이영림
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2003년도 춘계학술대회
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    • pp.1615-1620
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    • 2003
  • The purpose of the study is not only to establish experimental system for laser chemical vapor deposition but also to find the characteristics of SiC rod growth that is the beginning step in developing technology of 3 dimensional prototyping with laser chemical vapor deposition. In this study, SiC rod was generated with varying TMS pressure for 5 minutes. Deposition rates with varying TMS pressure, shapes of rods, surface roughness and component organization were investigated, in particular.

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플라즈마 화학기상법을 이용하여 증착된 박막 전하 농도의 신경망 모델링 (Neural Network Modeling of Charge Concentration of Thin Films Deposited by Plasma-enhanced Chemical Vapor Deposition)

  • 김우석;김병환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
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    • pp.108-110
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    • 2006
  • A prediction model of charge concentration of silicon nitride (SiN) thin films was constructed by using neural network and genetic algorithm. SIN films were deposited by plasma enhanced chemical vapor deposition and the deposition process was characterized by means of $2^{6-1}$ fractional factorial experiment. Effect of five training factors on the model prediction performance was optimized by using genetic algorithm. This was examined as a function of the learring rate. The root mean squared error of optimized model was 0.975, which is much smaller than statistical regression model by about 45%. The constructed model can facilitate a Qualitative analysis of parameter effects on the charge concentration.

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TiN 박막을 코팅한 드릴의 수명향상에 관한 연구 (A Study on the Life Enhancement of TiN Coated Drill)

  • 김홍우;김문일
    • 대한기계학회논문집
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    • 제16권12호
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    • pp.2340-2348
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    • 1992
  • 본 연구에서는 드릴(SKH9종)에 스퍼터링법으로 Ti 중간층을 약 0.2$\mu\textrm{m}$의 두께 로 코팅한후, 그 위에 플라즈마 화학증착법으로 TiN박막을 코팅한 드릴로 드릴링 시험 을 행하여 수명을 평가하였으며, 드릴의 내마멸성 및 드릴링한 구멍 내면의 조도를 코 팅하지 않은 드릴 및 TiN 코팅한 드릴과 비교하므로서 Ti/TiN코팅처리에 의한 공구성 능 및 수명향상 효과를 평가하고자 하였다.

플라즈마 화학기상증착법으로 성장시킨 탄소나노튜브의 미세구조 분석 (Microstructure Analysis of Carbon Nanotubes Grown by Plasma Enhanced Chemical Vapor Deposition)

  • 윤종성;윤존도;박종봉;박경수
    • 한국재료학회지
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    • 제15권4호
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    • pp.246-251
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    • 2005
  • Plasma enhanced chemical vapor deposition(PE-CVD) method has an advantage in synthesizing carbon nanotubes(CNTs) at lower temperature compared with thermal enhanced chemical vapor deposition(TE-CVD) method. In this study, CNTs was prepared by using PE-CVD method. The growth rate of CNT was faster more than 100 times on using Invar alloy than iron as catalyst. It was found that chrome silicide was formed at the interface between chrome layer and silicon substrate which should be considered in designing process. Nanoparticles of Invar catalyst were found oxidized on their surfaces with a depth of 10 m. Microstructure was analyzed by scanning electron microscopy, transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray spectrometry. Based on the result of analysis, growth mechanism at an initial stage was suggested.

Ga2O3박막 상에서의 RF 플라즈마 화학기상증착법의 메테인 분율 조절에 의한 탄소층의 다양한 형상 제어 연구 (Various Shape of Carbon Layer on Ga2O3 Thin Film by Controlling Methane Fraction in Radio Frequency Plasma Chemical Vapor Deposition)

  • 서지연;신윤지;정성민;김태규;배시영
    • 열처리공학회지
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    • 제35권2호
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    • pp.51-56
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    • 2022
  • In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga2O3 templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.