Journal of the Korean Society for Heat Treatment (열처리공학회지)

The Korean Society for Heat Treatment (한국열처리공학회)
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Influence of Temperature and Pressure on Graphene Synthesis by Chemical Vapor Deposition

CVD법을 이용한 그래핀합성에 미치는 온도와 압력의 영향

  • Lee, Eun Young (Department of Advanced Materials and Engineering, Kumoh National Institute of Technology) ;
  • Kim, Sungjin (Department of Advanced Materials and Engineering, Kumoh National Institute of Technology) ;
  • Jun, Heung-Woo (Department of Electronics, Kumoh National Institute of Technology)
  • 이은영 (금오공과대학교 신소재공학부) ;
  • 김성진 (금오공과대학교 신소재공학부) ;
  • 전흥우 (금오공과대학교 전자공학부)
  • Received : 2014.12.12
  • Accepted : 2014.12.30
  • Published : 2015.01.30
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Abstract

The fabrication of high quality graphene using chemical vapor deposition (CVD) method for application in semiconductor, display and transparent electrodes is investigated. Temperature and pressure have major impact on the growth of graphene. Graphene doping was obtained by deposition of $MoO_3$ thin films using thermal evaporator. Bilayer graphene and the metal layer graphene were obtained. According to the behavior of graphene growth P-type doping was confirmed. Graphene obtained through experiments was analyzed using optical microscopy, Raman spectroscopy, UV-visible light spectrophotometer, 4-point probe sheet resistance meter and atomic force microscopy.

Keywords

References

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