• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.39.2-39.2
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• 2011

With the steady increase in the demand for flexible devices, mainly in display panels, researchers have focused on finding a novel material that have excellent electrical properties even when it is bended or stretched, along with superior mechanical and thermal properties. Graphene, a single-layered two-dimensional carbon lattice, has recently attracted tremendous research interest in this respect. However, the limitations in the growing method of graphene, mainly chemical vapor deposition on transition metal catalysts, has posed severe problems in terms of device integration, due to the laborious transfer process that may damage and contaminate the graphene layer. In addition, to lower the overall cost, a fabrication technique that supports low temperature and low vacuum is required, which is the main reason why solution-based process for graphene layer deposition has become the hot issue. Nonetheless, a direct deposition method of large area, few-layered, and uniform graphene layers has not been reported yet, along with a convenient method of patterning them. Here, we report an evaporation-induced technique for directly depositing few layers of graphene nanosheets with excellent uniformity and thickness controllability on any substrate. The printed graphene nanosheets can be patterned into desired shapes and structures, which can be directly applicable as flexible and transparent electrode. To illustrate such potential, the transport properties and resistivity of the deposited graphene layers have been investigated according to their thickness. The induced internal flow of the graphene solution during tis evaporation allows uniform deposition with which its thickness, and thus resistivity can be tuned by controlling the composition ratio of the solute and solvent.

• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.1-4
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• 2015

Production of $MgB_2$ film on metallic Hastelloy with SiC as the buffer layer was achieved by means of hybrid physical-chemical vapor deposition technique, whereas SiC buffer layers with varied thickness of 170 and 250 nm were fabricated inside a pulsed laser deposition chamber. Superconducting transition temperature and critical current density were verified by transport and magnetic measurement, respectively. With SiC buffer layer, the reduced delaminated area at the interface of $MgB_2$-Hastelloy and the slightly increased $T_c$ of $MgB_2$ tapes were clearly noticed. It was found that the upper critical field, the irreversibility field and the critical current density were reduced when $MgB_2$ tapes were buffered with SiC buffer layer. Clarifying the mechanism of SiC buffer layer in $MgB_2$ tape in affecting the superconducting properties is considerably important for practical applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.893-896
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• 2003

Plasma polymerized para-xylene (PPpX) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) were used to passivate the organic light emitting diodes (OLEDs). For OLEDs, indium tin oxide (ITO), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD), tris(8-hydroxyquinoline) aluminum $(Alq_{3})$ and aluminum (Al) were used as the anode, the hole transport layer (HTL), the emitting layer (EML) and the cathode, respectively. The OLED device with the PPpX passivation film (passivated device) showed similar electrical and optical characteristics to those of the OLED device without the PPpX passivation film (control device), indicating that the PECVD process did not degrade the performance of the OLEDs notably. The lifetime of the passivated device was two times longer than that of the control device. Passivation of OLEDs with PPpX films also suppressed the growth of dark spots. The density and size of dark spots of the passivated device were much smaller than those of the control device.

• Journal of Powder Materials
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• v.25 no.5
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• pp.402-407
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• 2018

Molybdenum silicide has gained interest for high temperature structural applications. However, poor fracture toughness at room temperatures and low creep resistance at elevated temperatures have hindered its practical applications. This study uses a novel powder metallurgical approach applied to uniformly mixed molybdenum silicide-based composites with silicon carbide. The degree of powder mixing with different ball milling time is also demonstrated by Voronoi diagrams. Core-shell composite powder with Mo nanoparticles as the shell and ${\beta}-SiC$ as the core is prepared via chemical vapor transport. Using this prepared core-shell composite powder, the molybdenum silicide-based composites with uniformly dispersed ${\beta}-SiC$ are fabricated using pressureless sintering. The relative density of the specimens sintered at $1500^{\circ}C$ for 10 h is 97.1%, which is similar to pressure sintering owing to improved sinterability using Mo nanoparticles.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.53.2-53.2
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• 2009

몰리브덴(Mo)은 우수한 전기전도도와 고온 안정성으로 인해 전자부품의 전극으로 널리 사용되고, 미래 에너지인 태양전지 분야에서 CIS계 화합물박막태양전지의 후면전극으로 이용되고 있는 재료로서 현재 증착 방법으로는 D.C. sputtering이 가장 널리 이용되고 있다. 또한 $MoO_3$ 분말이 Mo 분말로 수소 환원되는 과정은 $MoO_3+H_2{\rightarrow}MoO_2+H_2O$ 와 $MoO_2+2H_2{\rightarrow}Mo+2H_2O$의 2단계를 통해서 수행되며 이중 첫 번째 단계에서 $MoO_3(OH)_2$라는 기상을 통해 지배적으로 일어난다고 알려져 있고 이를 화학증기수송(Chemical vapor transport : CVT)이라고 한다. 본 연구에서는 $MoO_3$분말의 수소 환원 과정 중에 발생하는 기상인 $MoO_3(OH)_2$을 이용하여 몰리브덴 옥사이드 박막을 증착하고 이를 다시 수소분위기에서 수소 환원하는 증착 방법을 통해 균일하고 부착성이 우수한 Mo 박막을 제조하고자 하였다. 기판으로 사용된 Glass를 $MoO_3$ 분말 위에 홀더를 이용하여 $MoO_2$ 박막을 증착하고 이를 다시 수소분위기에서의 수소 환원을 통해 Mo 박막을 성공적으로 제조하였다. 제조된 Mo박막의 결정구조 및 미세조직을 XRD 와 SEM을 통해 분석하였다.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

• Korean Journal of Metals and Materials
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• v.48 no.2
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• pp.175-179
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• 2010

We investigated the thermal conductivity of individual single-crystalline PbTe nanowires grown by chemical vapor transport method. Suspended MEMS was utilized to precisely measure the thermal conductivity of an individual nanowire. The thermal conductivity of a PbTe nanowire with diameter of 292 nm was measured to be $1.8W/m{\cdot}K$ at 300 K, which is about two thirds of that of bulk PbTe. This result indicates that the thermal conduction through a PbTe nanowire is effectively suppressed by the enhanced phonon boundary scattering. As the diameter of a PbTe nanowire decreases, the corresponding thermal conductivity linearly decreases.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.4
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• pp.145-152
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• 2023

The average Nusselt numbers in the source and crystal region for the variation of thermal Grashof number (Gr_t) in the range of 2.31 × 10⁴ ≤ Gr_t ≤ 4.68 × 10⁴ are obtained through numerical simulations. It is shown the average Nusselt number in the crystal region is more than twice as large as the average Nusselt number in the source region. The average Nusselt number in the source region shows an increasing tendency with increasing the thermal Grashof number, Gr_t, while the average Nusselt number in the crystal region shows a decreasing tendency with increasing thermal Grashof number, Gr_t. For the variation of the solutal Grashof number (Gr_s) in the ran ge of 3.28 × 10⁵ ≤ Gr_s ≤ 4.43 × 10⁵, the average Sherwood number in the source region and crystal region tends to decrease as the solutal Grashof number, Gr_s increases. The average Sherwood number in the crystal region is about four times greater than the average Sherwood number in the source region.

• Polymer(Korea)
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• v.38 no.6
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• pp.687-693
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• 2014

Poly(ether-block-amide) 1657 (PEBAX 1657) blended membranes with molecular weight 400 poly(ethylene glycol) (PEG 400) were prepared and their permeability was tested for the gases $N_2$, $O_2$, $CH_4$, $CO_2$, and $SO_2$ by the time-lag method. The permeation characteristics were investigated in terms of diffusivity and solubility, which are dominant factors for gas transport. With the addition of PEG 400, the permeability of all the gases increased and also the ideal selectivity for several pair gases was enhanced. In particular, selectivity for $CO_2/N_2$ ranged from 53.2 (pristine PEBAX 1657 membrane) to 84.1 (50% PEG 400 added), for $SO_2/CO_2$ from 38.9 to 50.7, and for $CO_2/CH_4$ from 17.7 to 31.4. The increase of both permeability and selectivity is mainly because of the increase of solubility of the gases, especially $CO_2$ and $SO_2$. To obtain durability against water vapor, glutaraldehyde (GA) was added to the PEBAX 1657/PEG 400 blended membranes. As a result, permeability decreased owing to a reduction of the free volume and ether oxide units, which are the main factors in elevating the permeability for the blended membranes, and selectivity decrease however; we believe that the durability of the resulting membranes would be increased.

• Journal of Korean Society for Atmospheric Environment
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• v.19 no.E3
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• pp.137-148
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• 2003

In this study, we examined the influence of long-range transport of dust particles and air pollutants on the photochemistry of NO$_3$on Jeju Island, Korea (33.17 N, 126.10$^{\circ}$E) during the Asian Dust-Storm (ADS) period of April 2001. Three ADS events were observed during the periods of 10∼12, 13∼14, and 25∼26 April. Average concentration level of nighttime NO$_3$on Jeju Island during the ADS period was estimated to be about 2 x 10$^{8}$ molecules cm$^{-3}$ ( - 9 pptv). Decreases in NO$_3$levels during the ADS period was likely to be determined mainly by the enhancement of the $N_2$O$_{5}$ heterogeneous reaction on dust aerosol surfaces. The reaction of N20s on aerosol surfaces was a more important sink for nighttime N03 during the ADS due to the significant loading of dust particles. The reaction of $N_2$O$_{5}$ with NMHCs and the gas-phase reaction of N20s with water vapor were both significant loss mechanisms during the study period, especially during the NADS. However, dry deposition of these oxidized nitrogen species and a heterogeneous reaction of NO$_3$were of no importance. Short-term observations of $O_3$, NO$_2$, DMS, and SO$_2$in the MBL indicated that concentrations of most of these chemical species were different between the ADS and non - Asian - Dust-Storm (NADS) periods, implying that their levels were affected sensitively by the differences in air mass trajectories.