• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.39.2-39.2
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• 2011

With the steady increase in the demand for flexible devices, mainly in display panels, researchers have focused on finding a novel material that have excellent electrical properties even when it is bended or stretched, along with superior mechanical and thermal properties. Graphene, a single-layered two-dimensional carbon lattice, has recently attracted tremendous research interest in this respect. However, the limitations in the growing method of graphene, mainly chemical vapor deposition on transition metal catalysts, has posed severe problems in terms of device integration, due to the laborious transfer process that may damage and contaminate the graphene layer. In addition, to lower the overall cost, a fabrication technique that supports low temperature and low vacuum is required, which is the main reason why solution-based process for graphene layer deposition has become the hot issue. Nonetheless, a direct deposition method of large area, few-layered, and uniform graphene layers has not been reported yet, along with a convenient method of patterning them. Here, we report an evaporation-induced technique for directly depositing few layers of graphene nanosheets with excellent uniformity and thickness controllability on any substrate. The printed graphene nanosheets can be patterned into desired shapes and structures, which can be directly applicable as flexible and transparent electrode. To illustrate such potential, the transport properties and resistivity of the deposited graphene layers have been investigated according to their thickness. The induced internal flow of the graphene solution during tis evaporation allows uniform deposition with which its thickness, and thus resistivity can be tuned by controlling the composition ratio of the solute and solvent.

• 한국초전도ㆍ저온공학회논문지
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• 제17권3호
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• pp.1-4
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• 2015

Production of $MgB_2$ film on metallic Hastelloy with SiC as the buffer layer was achieved by means of hybrid physical-chemical vapor deposition technique, whereas SiC buffer layers with varied thickness of 170 and 250 nm were fabricated inside a pulsed laser deposition chamber. Superconducting transition temperature and critical current density were verified by transport and magnetic measurement, respectively. With SiC buffer layer, the reduced delaminated area at the interface of $MgB_2$-Hastelloy and the slightly increased $T_c$ of $MgB_2$ tapes were clearly noticed. It was found that the upper critical field, the irreversibility field and the critical current density were reduced when $MgB_2$ tapes were buffered with SiC buffer layer. Clarifying the mechanism of SiC buffer layer in $MgB_2$ tape in affecting the superconducting properties is considerably important for practical applications.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.893-896
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• 2003

Plasma polymerized para-xylene (PPpX) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) were used to passivate the organic light emitting diodes (OLEDs). For OLEDs, indium tin oxide (ITO), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD), tris(8-hydroxyquinoline) aluminum $(Alq_{3})$ and aluminum (Al) were used as the anode, the hole transport layer (HTL), the emitting layer (EML) and the cathode, respectively. The OLED device with the PPpX passivation film (passivated device) showed similar electrical and optical characteristics to those of the OLED device without the PPpX passivation film (control device), indicating that the PECVD process did not degrade the performance of the OLEDs notably. The lifetime of the passivated device was two times longer than that of the control device. Passivation of OLEDs with PPpX films also suppressed the growth of dark spots. The density and size of dark spots of the passivated device were much smaller than those of the control device.

• 한국분말재료학회지
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• 제25권5호
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• pp.402-407
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• 2018

Molybdenum silicide has gained interest for high temperature structural applications. However, poor fracture toughness at room temperatures and low creep resistance at elevated temperatures have hindered its practical applications. This study uses a novel powder metallurgical approach applied to uniformly mixed molybdenum silicide-based composites with silicon carbide. The degree of powder mixing with different ball milling time is also demonstrated by Voronoi diagrams. Core-shell composite powder with Mo nanoparticles as the shell and ${\beta}-SiC$ as the core is prepared via chemical vapor transport. Using this prepared core-shell composite powder, the molybdenum silicide-based composites with uniformly dispersed ${\beta}-SiC$ are fabricated using pressureless sintering. The relative density of the specimens sintered at $1500^{\circ}C$ for 10 h is 97.1%, which is similar to pressure sintering owing to improved sinterability using Mo nanoparticles.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.53.2-53.2
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• 2009

몰리브덴(Mo)은 우수한 전기전도도와 고온 안정성으로 인해 전자부품의 전극으로 널리 사용되고, 미래 에너지인 태양전지 분야에서 CIS계 화합물박막태양전지의 후면전극으로 이용되고 있는 재료로서 현재 증착 방법으로는 D.C. sputtering이 가장 널리 이용되고 있다. 또한 $MoO_3$ 분말이 Mo 분말로 수소 환원되는 과정은 $MoO_3+H_2{\rightarrow}MoO_2+H_2O$ 와 $MoO_2+2H_2{\rightarrow}Mo+2H_2O$의 2단계를 통해서 수행되며 이중 첫 번째 단계에서 $MoO_3(OH)_2$라는 기상을 통해 지배적으로 일어난다고 알려져 있고 이를 화학증기수송(Chemical vapor transport : CVT)이라고 한다. 본 연구에서는 $MoO_3$분말의 수소 환원 과정 중에 발생하는 기상인 $MoO_3(OH)_2$을 이용하여 몰리브덴 옥사이드 박막을 증착하고 이를 다시 수소분위기에서 수소 환원하는 증착 방법을 통해 균일하고 부착성이 우수한 Mo 박막을 제조하고자 하였다. 기판으로 사용된 Glass를 $MoO_3$ 분말 위에 홀더를 이용하여 $MoO_2$ 박막을 증착하고 이를 다시 수소분위기에서의 수소 환원을 통해 Mo 박막을 성공적으로 제조하였다. 제조된 Mo박막의 결정구조 및 미세조직을 XRD 와 SEM을 통해 분석하였다.

• 한국재료학회지
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• 제13권8호
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

• 대한금속재료학회지
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• 제48권2호
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• pp.175-179
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• 2010

We investigated the thermal conductivity of individual single-crystalline PbTe nanowires grown by chemical vapor transport method. Suspended MEMS was utilized to precisely measure the thermal conductivity of an individual nanowire. The thermal conductivity of a PbTe nanowire with diameter of 292 nm was measured to be $1.8W/m{\cdot}K$ at 300 K, which is about two thirds of that of bulk PbTe. This result indicates that the thermal conduction through a PbTe nanowire is effectively suppressed by the enhanced phonon boundary scattering. As the diameter of a PbTe nanowire decreases, the corresponding thermal conductivity linearly decreases.

• 한국결정성장학회지
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• 제33권4호
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• pp.145-152
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• 2023

2.31 × 10⁴ ≤ Gr_t ≤ 4.68 × 10⁴의 범위에서 온도 Grashof 수(Gr_t)의 변화에 대하여, 소스와 결정영역에서의 평균 Nusselt수를 나타내고 있다. 결정영역에서의 평균 Nusselt 수가 소스영역에서의 평균 Nusselt 수 보다 2배 이상 큰 것으로 나타나고 있다. 소스영역에서의 평균 Nusselt 수는 온도 Grashof 수(Gr_t)에 대하여, 증가하는 경향을 보여주고 있으며, 반면에 결정영역에서의 평균 Nusselt 수는 온도 Grashof 수(Gr_t)에 대하여, 감소하는 경향을 나타나고 있다. 3.28 × 10⁵ ≤ Gr_s ≤ 4.43 × 10⁵의 범위에서 농도 Grashof 수(Gr_s)의 변화에 대하여, 소스와 결정영역에서의 평균 Sherwood 수를 나타내고 있다. 소스영역과 결정영역에서의 평균 Sherwood 수는 농도 Grashof 수(Gr_s)가 증가함에 따라, 감소하는 경향을 보이고 있다. 결정영역에서의 평균 Sherwood 수는 소스영역에서의 평균 Sherwood 수보다 약 4배 정도 크다.

• 폴리머
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• 제38권6호
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• pp.687-693
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• 2014

분자량이 400 g/mol인 poly(ethylene glycol)(PEG 400)을 poly(ether-block-amide) 1657(PEBAX 1657)와 혼합을 통하여 막을 제조하였고, time-lag 법에 의해 $N_2$, $O_2$, $CH_4$, $CO_2$, 그리고 $SO_2$ 기체에 대한 투과도를 테스트하였다. 투과특성은 막 내에서 기체분자이동에 어느 것이 지배적인가를 알기 위하여 확산과 용해 항으로 조사하였다. PEG 400의 함량이 증가함에 따라 모든 기체에 대한 투과도 및 이상선택도가 모두 증가하였다. 특히 $CO_2/N_2$의 경우 53.2(PEG 400이 첨가되지 않은 PEBAX 1657)으로부터 84.1(PEG 400이 50% 첨가된 막)이었으며, $SO_2/CO_2$는 38.9 에서 50.7, 그리고 $CO_2/CH_4$의 경우는 177.7에서 31.4의 결과를 보여주었다. 투과도와 선택도의 증가는 기체들의 용해도로 인한 것이며, 특히 $CO_2$와 $SO_2$에 대해서는 더욱 증가한다는 것을 알 수 있었다. 수증기에 대한 내구성을 얻기 위하여, glutaraldehyde(GA)가 PEBAX 1657/PEG 400 혼합막에 첨가되었다. 결과적으로 투과도는 혼합막에 있어서 투과도 증가와 선택도 감소의 주된 요인으로 작용하는 자유부피와 ether oxide 기의 감소로 인하여 줄어들었으나 이는 막의 내구성을 향상시키는데 도움이 되었을 것으로 사료된다.

• Journal of Korean Society for Atmospheric Environment
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• 제19권E3호
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• pp.137-148
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• 2003

In this study, we examined the influence of long-range transport of dust particles and air pollutants on the photochemistry of NO$_3$on Jeju Island, Korea (33.17 N, 126.10$^{\circ}$E) during the Asian Dust-Storm (ADS) period of April 2001. Three ADS events were observed during the periods of 10∼12, 13∼14, and 25∼26 April. Average concentration level of nighttime NO$_3$on Jeju Island during the ADS period was estimated to be about 2 x 10$^{8}$ molecules cm$^{-3}$ ( - 9 pptv). Decreases in NO$_3$levels during the ADS period was likely to be determined mainly by the enhancement of the $N_2$O$_{5}$ heterogeneous reaction on dust aerosol surfaces. The reaction of N20s on aerosol surfaces was a more important sink for nighttime N03 during the ADS due to the significant loading of dust particles. The reaction of $N_2$O$_{5}$ with NMHCs and the gas-phase reaction of N20s with water vapor were both significant loss mechanisms during the study period, especially during the NADS. However, dry deposition of these oxidized nitrogen species and a heterogeneous reaction of NO$_3$were of no importance. Short-term observations of $O_3$, NO$_2$, DMS, and SO$_2$in the MBL indicated that concentrations of most of these chemical species were different between the ADS and non - Asian - Dust-Storm (NADS) periods, implying that their levels were affected sensitively by the differences in air mass trajectories.