• Title/Summary/Keyword: chemical shift

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Study on the Generation of Leakage Current by the Fourier Transform Infrared Analysis (푸리에변환 적외선분광분석법에 의한 누설전류의 발생 원인에 대한 연구)

  • Oh, Teresa
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.6
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    • pp.514-519
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    • 2007
  • The surfaces of $SiO_2$ films were treated by PMMA diluted solutions, and analyzed the chemical shift from Fourier Transform Infrared Spectrometer. The $SiO_2$ film treated by PMMA diluted solution changed the properties of the surface, and showed the blue and red shift according to the concentration of PMMA. The C-H bond elongation effect due to the high electro-negative atom chlorine showed the red shift, and makes the final material with the cross-link structure. The leakage current was efficiently reduced at the sample No 7 with the red shift, witch depends on the electron deficient group.

Study of the Surface Acoustic Wave Biosensors for Detection of the Immunoglobulin G (자가면역글로불린 G 측정을 위한 표면탄성파 바이오센서에 대한 연구)

  • Kim, Gi-Beum;Cheong, Woo-Suk;Park, Young-Ran;Kim, Shang-Jin;Kim, Seong-Jong;Kang, Hyung-Sub;Kim, Jin-Shang;Hong, Chul-Un
    • Korean Chemical Engineering Research
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    • v.49 no.2
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    • pp.224-229
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    • 2011
  • In this study, we have developed shear horizontal(SH) surface acoustic wave(SAW) sensors for the detection of immunoglobulin G(IgG) on the gold coated delay line of SH-SAW devices. As the result of the experiment, we could uniformly immobilize anti-MIgG(mouse IgG) conjugate on the surface of gold. When displaying results of immobilization on the surface of gold using G-anti MIgG conjugate and blocking buffer in frequency shift, G-anti MIgG conjugate showed frequency shift of 75.1 kHz in the initial frequency, and blocking buffer showed frequency shift of 215.7 kHz. When various concentrations of MIgG was added in 100MHz type sensor, the sensor showed 46.3, 127.45, 161.21 and 262.39 kHz frequency shift at 25, 50, 75 and 100 ${\mu}g$ MIgG concentration, respectively.

BTMSM 프리커서를 사용한 절연 박막과 유전상수에 대한 연구

  • 오데레사
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2008.05a
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    • pp.738-739
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    • 2008
  • The SiOC film of carbon centered system was prepared using bistrimethylsilymethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of he SiOC film were analyzed by the contact angle and FTIR spectra. The dielectric constant of the deposited films decreased after annealing process, and the correlation between the increasing the BTMSM/O2 flow rate ratio and he dielectric constant did not exist. However, the trend of increasing or decreasing of the dielectric constant repeated and here is the correlation ship between the dielectric constant and the Si-O-C bond in the range of $950{\sim}1200\;cm^{-1}$. The dielectric constant decreased between samples with the chemical shift. The lowest dielectric constant was 1.65 at the sample, which was observed he chemical shift.

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Study on the Variation of Dielectronic Constant for an Organic Insulator Film (유기물 절연 박막에 대한 유전상수의 변화에 대한 연구)

  • Oh, Teresa
    • Journal of the Korean Vacuum Society
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    • v.17 no.4
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    • pp.341-345
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    • 2008
  • The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of the SiOC film were analyzed by the contact anlge and FTIR spectra. The dielectric constant of the deposited films decreased after annealing process, and the correlation between the increasing the BTMSM/$O_2$ flow rate ratio and the dielectric constant did not exist. However, the trend of increasing or decreasing of the dielectric constant repeated and there is the correlation ship between the dielectric constant and the Si-O-C bond in the range of $950{\sim}1200\;cm^{-1}$. The dielectric constant decreased between samples with the chemical shift. The lowest dielectric constant was 1.65 at the sample, which was observed the chemical shift.

Electron-Beam Mediated Rearrangement and Fragmentation of Bis(diphenylphosphino)alkane Derivatives in Gas Phase

  • Jeon, Yea-Sel;Choi, Jeong Chul;Jeong, Young-Sik;Hwang, Kwang-Jin
    • Rapid Communication in Photoscience
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    • v.2 no.1
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    • pp.31-33
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    • 2013
  • The irradiation of electron-beam onto bis-(diphenylphosphino)methane, ethane, propane and butane initiated phenyl-shift from a phosphine to another phosphine atom and subsequent fragmentation resulted in the formation of triphenylphosphine derivative as key intermediate. The mechanism of those processes is speculated.