• Title/Summary/Keyword: charge-to-breakdown

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A Study on the Effect of Space Charge and tole Dielectric Breakdown of PEF for Electric Installation (전기설비용 PET의 절연파괴와 공간전하효과에 관한 연구)

  • 윤성도;박상현;정학수;서장수;박중순;국상훈
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 1992.11a
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    • pp.37-40
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    • 1992
  • This paper examined the existance behavior of charged particles by measuring polarity inversion current Thermal Stimulate Current (TSC) and analysed appearance mechanism of polarity inversion current Peak and Also investigated relation between ionic space charge format ion and dielectric breakdown by measuring D.C breakdown impulse breakdown D.C - impulse superposition as a sample of FET. As a result. lie found that dielectric breakdown is likely to happen due to ionic space charge at the transient state when applied polarity inversion voltage and that charged partion of TSE Peak at the high temperature was the same as that of polarity inversion current. Also there was no effect on ionic space charge about the dielectric breakdown in stationary state when applied D.C voltage.

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A study on the breakdown characteristics of power p-n junction device using field limiting ring and side insulator wall (전계제한테와 측면 유리 절연막 사용한 전력용 p-n 접합 소자의 항복 특성 연구)

  • 허창수;추은상
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.45 no.3
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    • pp.386-392
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    • 1996
  • Zinc-Borosilicate is used as a side insulator wall to make high breakdown voltage with one Field Limiting Ring in a power p-n junction device in simulation. It is known that surface charge density can be yield at the interface of Zinc-Borosilicate glass / silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage is improved 1090 V under the same structure.The breakdown voltage under varying the surface charge density has a limit value. When the epitaxial thickness is varied, the position of FLR doesn't influence to the breakdown characteristic not only under non punch-through structure but also under punch-through structure. (author). 7 refs., 12 figs., 2 tabs.

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The Diagnosis of Treeing Breakdown Using Simultaneous Detection of Electrical Charge and Acoustic Emission Pulse of Partial Discharge (부분 방전 전하와 음향 방출 펄스의 동시 측정에 의한 트리잉 파괴 진단)

  • 김성홍;박재준;김재환
    • Electrical & Electronic Materials
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    • v.10 no.3
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    • pp.247-254
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    • 1997
  • Internal voids in insulators give rise to partial discharge, which causes a local breakdown and even entire insulation breakdown. Recently, the necessity of establishing the way to diagnose the aging of insulation materials and to predict of insulation breakdown become important. The purpose of our work are to investigate the treeing phenomena with an artificial needle shaped void by the charge of discharge and acoustic emission pulse in each phase angle area at the same time. We analyzed the .PHI.-QA-t pattern and .PHI.-AEA-t pattern using statistic operators such as pulse magnitude, pulse number, skewness, kurtosis. Therefore, the relation between the charge of discharge and acoustic emission pulse will be helpful to predict the breakdown just before the breakdown occur.

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The Effect of Fixed Oxide Charge on Breakdown Voltage of p+/n Junction in the Power Semiconductor Devices (전력용 반도체 소자의 설계 제작에 있어서 Fixed oxide charge가 p+/n 접합의 항복전압에 미치는 영향)

  • Yi, C.W.;Sung, M.Y.;Choi, Y.I.;Kim, C.K.;Suh, K.D.
    • Proceedings of the KIEE Conference
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    • 1988.11a
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    • pp.155-158
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    • 1988
  • The fabrication of devices using plans technology could lend to n serious degradation in the breakdown voltage as a result of high electric field at the edges. An elegant approach to reducing the electric field at the edge is by using field limiting ring. The presence of surface charge has n strong influrence on the depletion layer spreading at the surface region because this charge complements the charge due to the ionized acceptors inside the depletion layer. Surface charge of either polarity can lower the breakdown voltage because it affects the distribution of electric field st the edges. In this paper we discuss the influrences of fixed oxide charge on the breakdown voltage of the p+/n junction with field limiting ring(or without field limiting ring).

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The Diagonosis of Treeing Breakdown Simultaneous Detection on Charge of Partial Discharge and Acoustic Emission Pulse (방전 전하와 음향 방출 펄스의 동시 측정에 의한 트리잉 파괴 진단)

  • Choi, J.K.;Kim, S.H.;Park, J.J.;Kim, J.H.
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1781-1783
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    • 1996
  • Recently, the necessity of establishing the way to diagnose the aging of insulation materials and to predict of insulation breakdown become important. The purpose of our work are to investigate the treeing phenomena with a artificial needle shape void by the charge of partial discharge and acoustic emission pulse in each phase angle area at the same time. We have analyzed the ${\Phi}-Q-n$ pattern and the insulation diagnosis of the samples using statistic operators such as charge magnitude and A.E pulse factor, skweness, kurtosis, G,C. Therefore, the relation between the charge of partial discharge and A.E pulse will be helpful and efficient to predict the breakdown just before the breakdown occure.

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A Study on Breakdown Voltage of GaAs Power MESFET's (GaAs Power MESFET의 항복전압에 관한 연구)

  • 김한수;김한구;박장우;기현철;박광민;손상희;곽계달
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.7
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    • pp.1033-1041
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    • 1990
  • In this paper, under pinch-off conditions, the gate-drain breakdown voltage characteristics of GaAs Power MESFET's as a function of device parameters such as channel thickness, doping concentration, gate length etc. are analyzed. Using the Green's function, the gate ionic charge induced by the depleted channel ionic charge is calculated. The impact ionization integral by avalanche multiplication between gate and drain is used to investigate breakdown phenomena. Especially, the localized excess surface charge effect as well as the uniform surface charge effect on breakdown voltage is considered.

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Electrical characteristics of the multi-result MOSFET (Multi result MOSFET의 에피층 농도에 따른 전기적 특성분석)

  • Kim, Hyoung-Woo;Kim, Sang-Cheol;S대, Kil-Soo;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.365-368
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    • 2004
  • Charge compensation effects in multi-resurf structure make possible to obtain high breakdown volatage and low on-resistance in vertical MOSFET. In this paper, electrical characteristics of the vertical MOSFET with multi epitaxial layer is presented. Proposed device has n and p-pillar for obtaining the charge compensation effects and The doping concentration each pillar is varied from $5{\times}10^{14}\;to\;1{\times}10^{16}/cm^3$. The thickness of the proposed device also varied from $400{\mu}m\;to\;500{\mu}m$. Due to the charge compensation effects, 4500V of breakdown voltage can be obtained.

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Electrohydrodynamic Analysis of Dielectric Guide Flow Due to Surface Charge Density Effects in Breakdown Region

  • Lee, Ho-Young;Kang, In Man;Lee, Se-Hee
    • Journal of Electrical Engineering and Technology
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    • v.10 no.2
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    • pp.647-652
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    • 2015
  • A fully coupled finite element analysis (FEA) technique was developed for analyzing the discharge phenomena and dielectric liquid flow while considering surface charge density effects in dielectric flow guidance. In addition, the simulated speed of surface charge propagation was compared and verified with the experimental results shown in the literature. Recently, electrohydrodynamics (EHD) techniques have been widely applied to enhance the cooling performance of electromagnetic systems by utilizing gaseous or liquid media. The main advantage of EHD techniques is the non-contact and low-noise nature of smart control using an electric field. In some cases, flow can be achieved using only a main electric field source. The driving sources in EHD flow are ionization in the breakdown region and ionic dissociation in the sub-breakdown region. Dielectric guidance can be used to enhance the speed of discharge propagation and fluidic flow along the direction of the electric field. To analyze this EHD phenomenon, in this study, the fully coupled FEA was composed of Poisson's equation for an electric field, charge continuity equations in the form of the Nernst-Planck equation for ions, and the Navier-Stokes equation for an incompressible fluidic flow. To develop a generalized numerical technique for various EHD phenomena that considers fluidic flow effects including dielectric flow guidance, we examined the surface charge accumulation on a dielectric surface and ionization, dissociation, and recombination effects.

Comparative Study of DC Breakdown and Space Charge Characteristics of Insulation Paper Impregnated with Natural Ester and Mineral Oil

  • Hao, Jian;Zou, Run-Hao;Liao, Rui-Jin;Yang, Li-Jun;Liao, Qiang;Zhu, Meng-Zhao
    • Journal of Electrical Engineering and Technology
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    • v.13 no.4
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    • pp.1682-1691
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    • 2018
  • Natural ester is a suitable substitute for mineral oil and has been widely used in AC transformer in many countries. In order to further application of natural ester in direct current (DC) equipment, it is needed to investigate its long term insulation property under DC condition. In this paper, a thermal ageing experiment was conducted for both mineral oil-paper and natural ester-paper insulation. The DC breakdown and space charge characteristics of insulation paper impregnated with natural ester and mineral oil was compared. Results show that the resistivity of the paper immersed in natural ester and mineral oil both increase as the ageing goes on. While insulation paper impregnated with natural ester has higher resistivity and DC breakdown voltage than the paper impregnated with mineral oil. The DC breakdown voltage for the oil impregnated insulation paper being DC pre-stressing is higher than that without pre-stressing. The average DC breakdown field strength difference between the test with pre-stressing and without pre-stressing clearly shows that there is an apparent enhancement effect for the homo-charge injection on the DC breakdown.

A Study on the Breakdown Characteristics of High Voltage Device using Field Limiting Ring and Side Glass Insulator Wall (전계제한테와 측면 유리 절연층을 사용한 고내압 소자의 항복 특성 연구)

  • Huh, Chang-Su;Chu, Eun-Sang
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1072-1074
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    • 1995
  • Zinc-Borosilicate is used as a side insulastor wall to make high breakdown voltage with one Field Limiting Ring in a p-n junction. It is known that surface charge can be yield at the interface of Zinc-Borosilicate Glass/Silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage improved more than 660V without using more FLR.

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