• Journal of Electrical Engineering and Technology
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• 제13권4호
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• pp.1759-1768
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• 2018

The energy density, power density and ohm resistance of battery change significantly as results of battery aging, which lead to decrease in the accuracy of the equivalent model. A parameter identification method of the equivale6nt circuit model with 3 R-C branches based on the test database of battery life cycle is proposed in this paper. This database is built on the basis of experiments such as updating of available capacity, charging and discharging tests at different rates and relaxation characteristics tests. It can realize regular update and calibration of key parameters like SOH, so as to ensure the reliability of parameters identified. Taking SOH, SOC and T as independent variables, lookup table method is adopted to set initial value for the parameter matrix. Meanwhile, in order to ensure the validity of the model, the least square method based on variable forgetting factor is adopted for optimizing to complete the identification of equivalent model parameters. By comparing the simulation data with measured data for charging and discharging experiments of Li-ion battery, the effectiveness of the full life cycle database and the model are verified.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.265-269
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• 1996

In this paper, electric field interference was analyzed in the Printed Circuit Board to restrain the elcctromagnetic wave using Boundary Element Method and Finite Element Method. First, charge density distribution was simulated using Boundary Element Method and the characteristic impedance was caculated to restrain the reflex wave, and mutual capacitance was caculated in the multi-strip line PCB. Finally, electric field was simulated in the variable patterns using Finite Element Method. As a result, the optimal structure and characteristics of strip line was obtained and the imformations about the optimal design pattern could be obtained with the analysing the feild distribution.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.265-272
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• 2000

In this paper the corona discharge in SF$_{6}$ gas used as insulating material in lots o high voltage equipment, is simulated by finite element method with Flux-Corrected Transport(FCT) method. By application of proposed method the negative corona discharge characteristics in needle to plane electrode is analyzed with time step. For the accuracy of analysis the secondary electron emission by photon and ion are also considered as well as the accuracy of analysis the secondary electron emission by photon and ion are also considered as well as townsend first ionization and electron attachment. The calculated results show that the electric field intensity between anode and ion group is decreased as times go-by according to field distortion by those space charge. Accordingly the electron density is decreased strongly by the attatchment effect of SF6 gas so that the corona discharge becomes extinguished abruptly.y.

• 공업화학
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• 제9권3호
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• pp.377-382
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• 1998

본 연구는 낮은 활성으로 활용성이 제한된 ${\gamma$-알루미나의 이용을 높이기 위하여 표면을 처리한 알루미나의 계면전기적 특성과 표면활성간의 상관성을 규명하기 위하여 수행되었다. 질산알루미늄을 출발 물질로 하고 암모니아수를 침전제로 사용하여 제조한 알루미나와 황산, 질산, 염산으로 표면 처리한 알루미나를 질량이동법과 site-binding theory를 이용하여 영점전하점을 측정하였다. Amine Titration법과 Hammett 지시약법으로 표면활성점을 구하였다. 전해질에 분산된 알루미나의 계면특성은 전위차적정방법에 의하여 측정된 표면 전하밀도값을 이용하여 분석하였다. 표면전하밀도와 산량의 결과를 이용하여 얻은 ${\gamma$-알루미나의 표면특성과 계면전기적 특성의 상관성은 다음과 같다. 표면을 처리하지 않은 알루미나는 $H_o{\leq}+9.3$인 조건에서 소성온도가 증가함에 따라 산도는 감소한다. 표면처리한 알루미나는 표면을 처리하는 데 사용한 음이온의 농도가 증가하면 표면 이온화상수와 영점전하점은 감소한다. 표면을 처리한 알루미나의 표면전하밀도와 산량은 $H_o{\leq}+4.8$인 조건에서 다음과 같은 상관관계를 갖는다. $SO_4^2-/Al_2O_3:Q_A=-0.172ln(0.0418{\sigma}+1.448)$ $NO_3^-/Al_2O_3:Q_A=-0.024{\sigma}-0.0189$ $Cl^-/Al_2O_3:Q_A=-0.01{\sigma}-0.2006$.

• 전기화학회지
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• 제18권4호
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• pp.137-142
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• 2015

$Mn_{1+X}Co_{2-X}O_4$ solid solutions with various Mn/Co ratios were synthesized by a combustion method, and used as cathode catalysts for lithium/air secondary battery. Their electrochemical and physicochemical properties were investigated. The morphology was examined by transmission electron microscopy (TEM), and the crystallinity was confirmed by X-ray diffraction (XRD) analyses. For the measurement of electrochemical properties, charge and discharge measurements were carried out at a constant current density of $0.2mA/cm^2$, monitoring the voltage change. Electrochemical impedance spectroscopy (EIS) analyses were also employed to examine the change in charge transfer resistance during charge-discharge process. $Mn_{1+X}Co_{2-X}O_4$ solid solutions showed enhanced cycleability as a cathode of Li/air secondary battery, and the performance was found to be strongly dependent on Mn/Co ratio. Among synthesized catalysts, $Mn_{1.5}Co_{1.5}O_4$ exhibited the best performance and cycleability, due to high charge transfer rate.

• 한국시뮬레이션학회논문지
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• 제28권1호
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• pp.109-115
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• 2019

격실 내 인명 살상확률을 계산하는 문제는 무기체계의 효과분석에 있어서 중요한 문제이다. 본 연구에서는 바닥 면이 정사각형인 직육면체 형태의 격실에서 격실 크기에 따른 인명 살상확률 100%를 만족하는 최소 화약량을 산출하는 식을 개발한다. 내부 폭발로 인해 생성된 폭풍파의 압력 이력은 고속 계산 폭압 모델로 계산하였고, 폭풍파에 노출된 인명의 살상확률은 Axelsson SP 방법론을 적용하여 계산하였다. 한 변의 길이가 5m에서 15m인 정사각형을 바닥 면으로 하는 격실 안에서 무게 20kg에서 170kg의 TNT가 폭발하는 총 176 가지의 시나리오들에 대해 시뮬레이션이 수행되었다. 선형 모델 및 화약밀도기반 모델을 개발하여 표적 격실의 바닥 면의 한 변의 길이에 따른 인명피해 100%를 만족하는 최소 폭약량을 예측하였다.

• Korean Chemical Engineering Research
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• 제45권3호
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• pp.242-248
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• 2007

자동차 전기장치 시스템을 최적화하기 위해서는 차량용 납축전지의 충전 및 방전 거동을 예측할 수 있는 모델링 기술이 필요하다. 본 연구에서는 유한요소법을 이용하여 차량용 12-V 납축전지의 충전 및 방전 거동을 예측할 수 있는 2차원 모델링을 수행하였다. 이 연구에 사용된 수학적 모델에는 전기화학반응 속도론, 전해질의 유동, 대류에 의한 이온의 전달현상, 전극의 시간에 따른 공극률의 변화 등이 고려되었다. 모델링의 신뢰성을 검증하기 위하여 방전 및 충전실험을 수행하였다. 방전실험은 $25^{\circ}C$에서 C/5, C/10 및 C/20의 방전율에 대하여 수행하였고, 충전실험은 $25^{\circ}C$에서 정전류-정전압 방법으로(제한전류 30A, 제한전압 14.24 V) 수행하였다. 모델에 근거하여 예측된 충 방전 거동은 충 방전 실험결과와 잘 일치하였다. 또한 2차원 모델링을 통하여 충 방전이 진행되는 동안 실제로 측정이 불가능한 납축전지 내부의 전류밀도, 전해액의 농도 및 충전상태(state of charge; SOC)의 분포를 예측할 수 있었다.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제54권6호
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• pp.287-293
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• 2005

Equations have been derived for computing electromagnetic forces by using the Continuum Design Sensitivity Analysis based on the Continuum Mechanics and the Virtual Work Principle. The resultant expressions have similar terms relating to the Korteweg-Holmholz force density, Maxwell Stress Tensor and Magnetic Charge Method but numerical implementation of the proposed scheme leads to efficient calculation and improved accuracy. In addition, the method can be easily applied to computing the magnetic force distribution as well as the global force. Results show the aforementioned advantages in comparison with the conventional methods.

• 한국신뢰성학회지:신뢰성응용연구
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• 제10권1호
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• pp.65-71
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• 2010

NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1090-1095
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• 2008

The SiOCH films that low dielectric interlayer dielectric materials were deposited on p-type Si(100) substrates through the dissociation of BTMSM precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed even greater reductions of the maximum capacitance and the dielectric constant of the SiOCH samples, owing to reductions of surface charge density. we confirmed this result with derivative of C-V characteristic, leakage current density. The maximum capacitance and leakage current density were respectively decreased about 4 pF, 60% after annealing. The average of low-k value is approximatly 2.07 after annealing.