• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.571-573
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• 2007

It is known that the main source of the area image sticking is the ion charge adsorption on the alignment layer. We found out that the adsorption of the ion charge of the liquid crystal in the cell was physisorption, which takes place between all molecules on any surface providing the adsorption force is small.

• Bulletin of the Korean Chemical Society
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• 제31권12호
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• pp.3675-3678
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• 2010

In-situ X-ray absorption spectroscopy (XAS) was used to elucidate the structural variation of $\alpha-MoO_3$ electrode upon discharge/charge reaction in a lithium ion battery. According to the XAS analysis, hexavalent Mo atoms in $\alpha-MoO_3$ framework are reduced as the amount of intercalated lithium ions increases. As lithium de-intercalation proceeds, most of pre-edge peaks are restored again. However, according to the Fourier transforms of the extended X-ray absorption fine structure (EXAFS) spectra, lithium de-intercalation reaction is partially irreversible upon the charge reaction, which is one of the main reasons why the capacity of $\alpha-MoO_3$ electrode decreases upon successive discharge/charge cycles.

• Journal of Electrochemical Science and Technology
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• 제14권4호
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• pp.369-376
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• 2023

The quick-charging performance of SiO electrodes is evaluated with a focus on solid electrolyte interphase (SEI)-reinforcing effects. The study reveals that the incorporation of fluoroethylene carbonate (FEC) into the SiO electrode significantly reduced the electrode fatigue, which is from the the viscoelastic properties of the FEC-derived SEI film. The impact of FEC is attributed to its ability to minimize the mechanical failure of the electrode caused by additional electrolyte decomposition. This beneficial outcome arises from volumetric stain-tolerant characteristics of the FEC-derived SEI film, which limited exposure of the bare SiO surface during 0.5 C-rate cycling. Notably, FEC greatly improves Li deposition during quick-charge cycles following aging at 0.5 C-rate cycling due to its ability to maintain a strong electrical connection between active materials and the current collector, even after extended cycling. Given these findings, we assert that mitigating SEI layer deterioration, which compromises the electrode structure, is vital. Hence, enhancing the interfacial attributes of the SiO electrode becomes crucial for maintaining kinetic efficiency of battery system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.354-356
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• 1997

In this paper, we study the distribution of surface charge density on polymer insulators. The electric field of polymer insulators is calculated by axisymetric 3-D FEM with dc source. And the surface charge density is calculated by electric scalar potential and boundary condition for electrostatic fields. Simulation model is the inclined type polymer insulator with a shed.

• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.87-90
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• 2005

$SiO_2$ via-hole etching with a high aspect ratio is a key process in fabricating ULSI devices; however, accumulated charge during plasma etching can cause etching stop, micro-loading effects, and charge build-up damage. To alleviate this concern, charge-up damage sensor was fabricated for the ultimate goal of real-time monitoring of accumulated charge. As an effort to reach the ultimate goal, fabricated sensor was used for electrical potential measurements of via holes between two poly-Si electrodes and roughly characterized under various plasma conditions using statistical design of experiment (DOE). The successful identification of potential difference under various plasma conditions not only supports the evidence of potential charge-up damage, but also leads the direction of future study.

• Journal of information and communication convergence engineering
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• 제3권4호
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• pp.187-190
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• 2005

High aspect ratio via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via-hole, this sophisticated and important process still hold several problems, such as etching stop and loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

• 한국결정성장학회지
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• 제28권4호
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• pp.141-147
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• 2018

태양광 에너지는 깨끗하며 무한한 재생에너지의 한가지로 많은 관심을 받아왔다. 태양광 에너지는 다결정 실리콘 웨이퍼 혹은 단결정 실리콘 웨이퍼로 구성된 솔라셀에 의해서 전기에너지로 전환된다. 제조원가를 낮추기 위하여 한 개의 석영 도가니에 폴리실리콘의 충진 크기를 증가시키는 연구가 많이 개발되어 왔다. 충진 크기를 증가시키면, 쵸크랄스키 공정장비의 온도제어가 강한 멜트 대류 때문에 힘들어진다. 본 연구에서는 20 inch와 24 inch 석영도가니와 90 Kg, 120 Kg, 150 Kg, 200 Kg, 250 Kg의 다양한 폴리실리콘 충진 크기에서 시뮬레이션을 통해 장비 온도 프로파일을 얻었으며, 실제값과 비교하고 분석하였다. 시뮬레이션 온도 프로파일과 실제 온도프로파일이 잘 일치하였으며, 이로써 충진 사이즈가 증가할 경우, 실제온도 프로파일 최적화를 위해 시뮬레이션을 사용할 수 있게 되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권3호
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• pp.360-369
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• 2012

The causes of showing different subthreshold slopes (SS) in programmed and erased states for two different charge trap flash (CTF) memory devices, SONOS type flash memory with gate-all-around (GAA) structure and TANOS type NAND flash memory with planar structure were investigated. To analyze the difference in SSs, TCAD simulation and low-frequency noise (LFN) measurement were fulfilled. The device simulation was performed to compare SSs considering the gate electric field effect to the channel and to check the localized trapped charge distribution effect in nitride layer while the comparison of noise power spectrum was carried out to inspect the generation of interface traps ($N_{IT}$). When each cell in the measured two memory devices is erased, the normalized LFN power is increased by one order of magnitude, which is attributed to the generation of $N_{IT}$ originated by the movement of hydrogen species ($h^*$) from the interface. As a result, the SS is degraded for the GAA SONOS memory device when erased where the $N_{IT}$ generation is a prominent factor. However, the TANOS memory cell is relatively immune to the SS degradation effect induced by the generated $N_{IT}$.

• 전기화학회지
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• 제18권4호
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• pp.137-142
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• 2015

$Mn_{1+X}Co_{2-X}O_4$ solid solutions with various Mn/Co ratios were synthesized by a combustion method, and used as cathode catalysts for lithium/air secondary battery. Their electrochemical and physicochemical properties were investigated. The morphology was examined by transmission electron microscopy (TEM), and the crystallinity was confirmed by X-ray diffraction (XRD) analyses. For the measurement of electrochemical properties, charge and discharge measurements were carried out at a constant current density of $0.2mA/cm^2$, monitoring the voltage change. Electrochemical impedance spectroscopy (EIS) analyses were also employed to examine the change in charge transfer resistance during charge-discharge process. $Mn_{1+X}Co_{2-X}O_4$ solid solutions showed enhanced cycleability as a cathode of Li/air secondary battery, and the performance was found to be strongly dependent on Mn/Co ratio. Among synthesized catalysts, $Mn_{1.5}Co_{1.5}O_4$ exhibited the best performance and cycleability, due to high charge transfer rate.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.119-120
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• 2000

Influences of sustain voltage on wall charges and wall voltages are experimentally investigated in surface AC plasma display panels(AC-PDPs), in which electrode gap and width are $80\;{\mu}m$ and $270\;{\mu}m$, respectively. The filling gas is Ne-Xe gas mixture, and total pressures 300 Torr. Also it is found that the more amount of Xe mixing ratio makes the less wall charge and voltage for sustain voltage ranged from 140 V to 222 V. The response time has been delayed by adding a small amount of Xe to Ne in comparison with that without Xe. It is also found that the wall charge and voltage are reduced by adding a small amount of Xe to Ne in comparison with those without Xe.