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http://dx.doi.org/10.6111/JKCGCT.2018.28.4.141

Understanding of the effect of charge size to temperature profile in the Czochralski method  

Baik, Sungsun (R&D Center, Woongjin Energy)
Kwon, Sejin (R&D Center, Woongjin Energy)
Kim, Kwanghun (R&D Center, Woongjin Energy)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.28, no.4, 2018 , pp. 141-147 More about this Journal
Abstract
Solar energy has attracted big attentions as one of clean and unlimited renewable energy. Solar energy is transformed to electrical energy by solar cells which are comprised of multi-silicon wafer or mono-silicon wafer. Monosilicon wafers are fabricated from the Czochralski method. In order to decrease fabrication cost, increasing a poly-silicon charge size in one quartz crucible has been developed very much. When we increase a charge size, the temperature control of a Czochralski equipment becomes more difficult due to a strong melt convection. In this study, we simulated a Czochralski equipment temperature at 20 inch and 24 inch in quartz crucible diameter and various charge sizes (90 kg, 120 kg, 150 kg, 200 kg, 250 kg). The simulated temperature profiles are compared with real temperature profiles and analyzed. It turns out that the simulated temperature profiles and real temperature profiles are in good agreement. We can use a simulated profile for the optimization of real temperature profile in the case of increasing charge sizes.
Keywords
Czochralski method; Temperature profile; Silicon single crystal ingot; Charge size; Solar industry;
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