• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.77-85
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• 1999

By assuming a linearly graded depletion edge approximation in the intrinsic MOS region and by taking into account the mobility variation dependent on both lateral and vertical fields, a physics-based analytical model for a short-channel(n-channel) MOSFET is suggested. Derived expressions for the threshold voltage and the drain current of typical MOSFET is structures could be used in a unified manner for all operating range. The threshold voltage was calculated by changing following variables : channel length, drain-source voltage, source-substrate voltage, p-substrate doping level, and oxide thickness. It is shown that the threshold voltage decreases almost exponentially as the channel length decreases. In addition, the short-channel threshold voltage roll-off, the channel length modulation and the electron mobility degradation can be derived within a satisfactory accuracy.

• IEIE Transactions on Smart Processing and Computing
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• v.3 no.3
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• pp.142-152
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• 2014

Vehicular Ad-hoc Networks (VANETs) are comprised of wireless mobile nodes characterized by a randomly changing topology, high mobility, availability of geographic position, and fewer power constraints. Orthogonal Frequency Division Multiplexing (OFDM) is a promising candidate for the physical layer of VANET because of the inherent characteristics of the spectral efficiency and robustness to channel impairments. The susceptibility of OFDM to Inter-Carrier Interference (ICI) is a challenging issue. The high mobility of nodes in VANET causes higher Doppler shifts, which results in ICI in the OFDM system. In this paper, a frequency domain com-btype channel estimation was used to cancel out ICI. The channel frequency response at the pilot tones was estimated using a Least Square (LS) estimator. An efficient interpolation technique is required to estimate the channel at the data tones with low interpolation error. This paper proposes a robust interpolation technique to estimate the channel frequency response at the data subcarriers. The channel induced noise tended to degrade the Bit Error Rate (BER) performance of the system. Parallel concatenated Convolutional codes were used for error correction. At the decoding end, different decoding algorithms were considered for the component decoders of the iterative Turbo decoder. A performance and complexity comparison among the various decoding algorithms was also carried out.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.2B
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• pp.120-129
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• 2012

Wireless mesh network (WMN) has recently emerged as a promising technology for tactical operation. If a platoon is organized with MPs, this system is suitable for tactical coverage is given for battle field where there is a shortage of wired infrastructure. However, MPs of typical WMN are generally fixed. This condition does not apply to diverse tactical scenarios. In this paper, it is considered that MPs have group mobility for flexible tactical networks. We propose cluster based multi-channel MAC scheme for mobilie WMN with single antenna condition. We have reduced the collision problems and message storming problems occur by mobility, so the reliability of WMN has been improved. Consequently, reliable communication is guaranteed by our framework in mobile WMN.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• ETRI Journal
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• v.31 no.6
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• pp.653-659
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• 2009

We have investigated the channel protection layer (PL) effect on the performance of an oxide thin film transistor (TFT) with a staggered top gate ZnO TFT and Al-doped zinc tin oxide (AZTO) TFT. Deposition of an ultra-thin PL on oxide semiconductor films enables TFTs to behave well by protecting the channel from a photo-resist (PR) stripper which removes the depleted surface of the active layer and increases the carrier amount in the channel. In addition, adopting a PL prevents channel contamination from the organic PR and results in high mobility and small subthreshold swings. The PL process plays a critical role in the performance of oxide TFTs. When a plasma process is introduced on the surface of an active layer during the PL process, and as the plasma power is increased, the TFT characteristics degrade, resulting in lower mobility and higher threshold voltage. Therefore, it is very important to form an interface using a minimized plasma process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.4 s.334
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• pp.1-8
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• 2005

The increased effective impurity due to the pocket ion implantation is well blown to give rise to a reduction of the effective mobility of halo MOSFETs. However, further decrease of the effective mobility can be observed in pocket implanted MOSFETs above the mobility reduction due to the Coulomb impurity scattering and the gate bias dependency of the effective mobility can also differ from the simple model describing the mobility behavior in terms of the effective impurity. Phonon scattering and surface scattering as well as impurity Coulomb scattering are also shown to be effective in the degradation of the carrier mobility of pocket implanted MOSFETs. Using the 1-D regional approximation the effect of the distribution of the inversion charge density along the channel on the drain current is investigated. The inhomogeneous channel charge distribution due to pocket implantation is also shown to contribute to the further reduction of the effective mobility in halo MOSFETs.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.8
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• pp.3068-3078
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• 2015

Although the massive MIMO system supports a high throughput, it requires a lot of channel information for channel compensation. For the reduction of overhead, the massive MIMO system generally uses TDD as duplexing scheme. Therefore, the massive MIMO system is sensitive to rapidly changing fast fading in according to time. For the improvement of reduced SINR by fast fading, the adaptive power control is proposed. Unlike the conventional scheme, the proposed scheme considers mobility of device for adaptive power control. The simulation of the proposed scheme is performed with consideration for mobility of device. The result of the simulation shows that the proposed scheme improves SINR. Since SINR is decreased in according to the number of device in the network by unit of cell, each base station can accommodate more devices by the proposed scheme. Also, because the massive MIMO system with high SINR can use high order modulation scheme, it can support higher throughput.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.4A
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• pp.370-377
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• 2004

In this paper, we present an adaptive modulation technique for orthogonal frequency division multiplexing (OFDM) for broadband wireless communications. Also, using improved channel prediction, we enhance the performance of adaptive OFDM in high mobility environments. Adaptive modulation technique has been shown to achieve reliable high-rate data transmission over frequency-selective fading channel when OFDM is employed. This scheme requires the accurate channel information between two stations for a better performance. In an outdoor high mobility environment, most of adaptive OFDM systems have to be given the channel information transmitted from the receiver. Even if it is possible, there is some delay. Moreover, the channel impulse response between two stations is very rapidly varied. If the channel information is obsolete at the time of transmission, then poor system performance will result. In order to solve this problem, we propose adaptive OFDM with improved channel predictor. The proposed bit allocation algorithm has a lower complexity and the proposed scheme mitigates the effect of channel delay. Robust approach is less sensitive to outdated channel information. Performance results show that the proposed scheme can achieve considerable performance enhancement.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.177-180
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• 2001

The quantum effects in the channel of a $\delta$ -doped NMOSFET structures are investigated by solving Schrodinger and Poisson equations self-consistently. According to the scaling of MOSFET structures, electron distributions change by the strong energy quantization. However the presence of a low-doped epitaxial region produces a reduction of the electron effective field for a given charge sheet density and therefore, improves the electron effective mobility. We also focus the quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the fabrication of ultra short MOSFET's.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.77-83
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• 1994

In this paper we numerically approximated the field-effect mobility of a-Si:H TFT. Field-effect mobility, based on the charge-trapping model and new effective capacitance model in our study, used Chebyshev approximation was approximated as the function of gate potential(gate-to-channel voltage). Even though various external factors are changed, this formula can be applied by choosing the characteristic coefficients without any change of the approximation formula corresponding to each operation region. Using new approximated field-effect mobility formula, the dependences of field-effect mobility on materials and thickness of gate insulator, thickness of a-Si bulk, and operation temperature in inverted staggered-electrode a-Si:H TFT were estimated. By this was the usefulness of new approximated mobility formula proved.