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The Behavior of the Mobility Degradation in Pocket Implanted MOSFETS  

Lee Byung-Heon (School of Electrical Engineering Chungbuk National University)
Lee Kie-Young (School of Electrical and Computer Engineering Chungbuk National University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.42, no.4, 2005 , pp. 1-8 More about this Journal
Abstract
The increased effective impurity due to the pocket ion implantation is well blown to give rise to a reduction of the effective mobility of halo MOSFETs. However, further decrease of the effective mobility can be observed in pocket implanted MOSFETs above the mobility reduction due to the Coulomb impurity scattering and the gate bias dependency of the effective mobility can also differ from the simple model describing the mobility behavior in terms of the effective impurity. Phonon scattering and surface scattering as well as impurity Coulomb scattering are also shown to be effective in the degradation of the carrier mobility of pocket implanted MOSFETs. Using the 1-D regional approximation the effect of the distribution of the inversion charge density along the channel on the drain current is investigated. The inhomogeneous channel charge distribution due to pocket implantation is also shown to contribute to the further reduction of the effective mobility in halo MOSFETs.
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