• KSII Transactions on Internet and Information Systems (TIIS)
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• v.8 no.12
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• pp.4324-4342
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• 2014

Previous papers analyzed the throughput performance of the CDMA ALOHA system in Rayleigh fading channel, but they assume that the channel coefficient of Rayleigh fading was the same in the whole packet, which is not realistic. We recently proposed the finite-state Markov channel (FSMC) model to the throughput analysis of DS uncoded CDMA/unslotted ALOHA networks for fixed length data traffic in the mobile environment. We now propose the FSMC model to the throughput analysis of coded DS CDMA/unslotted ALOHA networks with variable length data traffic and one or two user classes in the mobile environment. The proposed DS CDMA/unslotted ALOHA wireless networks for two user classes with access control can maintain maximum throughput for the high priority user class under high message arrival per packet duration.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.1C
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• pp.113-119
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• 2009

The training sequence with the appropriate length for equalization and initial synchronization is necessary before sending the pure data in the burst transmission type DS-UWB system. The length of the training sequence is one of the factors which make throughput decreased. The noble structure with the variable length of the training sequence whose length can be adaptively tailored according to the channel conditions (CM1,CM2,CM3,CM4) in the DS-USB systems is proposed. This structure can increase the throughput without sacrificing the performance than the method with fixed length of training sequence considering the worst case channel conditions. Simulation results under IEEE 802.15.3a channel model show that the proposed scheme can achieve higher throughput than a conventional one with the slight loss of BER performance. And this structure can reduce the computation complexity and power consumption with selecting the short length of the training sequence.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.16-21
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• 2006

A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.2495-2500
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• 2008

We simulated the mixing characteristics in micro T-channel using Lattice Boltzmann Method. We studied the relation a mixing length and pressure-drop due to inlet and outlet ration in Reynolds number 0.5, Peclet number 500 and Schmidt 1000. The ratio of a down-inlet to up-inlet was $0.5{\sim}1.5$ times, up-inlet to outlet was $1{\sim}3$ times and outlet length was 250 times to up-inlet. The mixing length decrease linearly as outlet ratio decreased, and pressure-drip increase non-linearly. Initial stage of micro channel mixture was fast by down-inlet ratio, however, the mixing length is not influence.

• Journal of Broadcast Engineering
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• v.16 no.2
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• pp.207-215
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• 2011

A signal passed through multi-path channel suffers ISI(Inter-Symbol Interference) and severe distortions caused by channel delay spread and noise components at the SC-FDE(Single Carrier with Frequency Domain Equalizer) transmission. Conventional UW(Unique-Word) based SC-FDE iterative channel estimation improves channel estimation performance by smoothing estimated CIR(Channel Impulse Response) of the noise components outside the channel length at time domain and restoring the broken cyclic property through UW reconstruction. In this paper, we propose channel estimation scheme through noise suppression within channel length. To suppress the noise, we estimate noise standard deviation as estimated CIR of the noise components outside the channel length and make criteria of the noise standard deviation gain that doesn't affect the original signal samples. When estimated CIR samples within channel length are less than the criteria value using the noise standard deviation and gain, the noise components are removed. Simulation results show that the proposed channel estimation scheme brings good channel MSE(Mean Square Error) and good BER(Bit Error Rate) performance.

• Journal of the Korean Society of Hazard Mitigation
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• v.4 no.4 s.15
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• pp.13-19
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• 2004

The tremendous flood damage caused by Typhoon Rusa(2002) was occurred at GangNeung City in GangWon Province. Almost of the city region was inundated and most of the stream channel facilities were damaged by flash flood with heavy rainfalls. We have investigated seriously damaged parts of stream bank and tried to analyze the causes of damages focused on flow characteristics in curved channel. We analyzed the damage aspects of curved channel by examining geomorphological survey and hydrographical characteristics. Strong correlation was shown according to the regression analysis between length of stream and meander wave length, and meander belt and length of stream. Furthermore, enveloped curve was presented between bottom slope of channel and meander belt, and meander ratio and channel width. As a result, special consideration about stream flow characteristics are needed for engineers who design stream banks and channels.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.8
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• pp.9-16
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• 2000

MOS transistors are fabricated and evaluated for RF IC applications such as mobile communication systems using 0.35m CMOS process. Characteristics of MOSFETs are analyzed at various channel length, width and bias conditions. From the analysis, cut-off frequency ($f_T$) is independent on channel width but maximum oscillation frequency ($f_{max}$) tends to derease as the channel width increases. As channel length increases, $f_T$ and fmax decrease. $f_T$ is 22GHz and fmax is 28GHz at its maximum value. High frequency noise performance is improved with larger channel width and smaller channel length at same bias conditions. NFmin at 2GHz is 0.45dB as a minimum value. From the evaluation, MOSFETs designed using 0.35m CMOS process demonstrated a full potential for the commercial RF ICs for mobile communication systems near 2GHz. And optimization methods of the CMOS transistors for RF applications are presented in this paper.

• Proceedings of the Korea Multimedia Society Conference
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• 2000.04a
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• pp.49-52
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• 2000

멀티미디어 데이터 저장에 있어서 중요한 요소 중의 하나는 얼마나 많은 양의 정보를 주어진 공간에 기록할 수 있느냐는 것이다. 현재 많이 사용되고 있는 광저장장치(optical channel) 기록을 위하여 Squared M-ary RLL의(d, k) 제한조건을 이용하여 상태천이행렬을 일반화하고 채널용량을 구하였다.

• Journal of information and communication convergence engineering
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• v.9 no.3
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• pp.310-314
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• 2011

This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.867-869
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• 2008

We have investigated the effects of hydrogen plasma treatment by PECVD (Plasma Enhanced Chemical Vapor Deposition) in the back channel region, the method for reducing the off state leakage current which increases with the short channel length of a-Si:H TFTs. To improve the off current characteristics, we analyzed the hydrogen plasma treatment with various RF power and plasma treatment times of PECVD. As the result of hydrogen plasma treatment in the back channel region it was remarkably reduced the off current level of 2um channel length TFT.